Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

Shao, Qi; Li, A.-D.; Cheng, Jin-Bo; Ling, Huiqin; Wu, Di; Liu, Z.-G.; Ming, Nai‐Ben; Wang, C.; Zhou, Hualan; Nguyen, Bich‐Yen

doi:10.1007/s00339-004-3141-9

Cited by 7 publications

(3 citation statements)

References 20 publications

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“…Klenov et al [4] reached the same conclusion using HRTEM but for depositions at higher temperature. Thus, this interface seems to be more stable compared to the reverse LAO/Si(0 0 1) one, where interfacial reactions lead to silicate formation [12,13].…”

Section: Resultsmentioning

confidence: 94%

Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3(001)

Mortada

Dentel

Derivaz

et al. 2011

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 94%

Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3(001)

Mortada

Dentel

Derivaz

et al. 2011

Journal of Crystal Growth

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“…Therefore, it is assumed that in the present case is similar situation occurs; the formation of the (Al, La)-Silicate layer has been observed in LaAlO 3 , Al 2 O 3 and La 2 O 3 films deposited by laser molecular beam epitaxy, atomic layer deposition, metal organic vapor deposition and pyrolysis method. [19][20][21][22][23] SIMS measurement can be used to determine the interface thickness in term of sputter time. The sputter time in the interface layer for LA1 films deposited at 500 and 650 • C was 61 and 89 seconds, respectively, while for LA2 films deposited at 500 and 650 • C was 61 and 91 seconds, respectively.…”

Section: Resultsmentioning

confidence: 99%

Characterization of Lanthanum-Aluminum Oxide Thin Films Deposited by Spray Pyrolysis

Meza-Rocha

Zaleta-Alejandre

Cabañas-Moreno

et al. 2013

ECS J. Solid State Sci. Technol.

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The optical, electrical, and structural characteristics of lanthanum-aluminum oxide thin films deposited by ultrasonic spray pyrolysis are presented. The films were deposited using a lanthanum nitrate and aluminum acetylacetonate solution in N, N-dimethylformamide on (100) Si substrates. The substrate temperature during deposition was in the 500–650°C range. The deposition activation energy was in the range of 17.4–20 kJ mol−1, depending on the relative concentration of lanthanum to aluminum in the precursor solution. The films were amorphous even at 650°C and they were given no further temperature annealing. The refractive index at 630 nm was in the range of 1.70–1.755 depending on the amount of lanthanum in the films. The electrical characteristics of the films were determined from capacitance and current versus voltage measurements of metal-oxide-semiconductor (MOS) structures incorporating them. A dielectric constant in the range of 5.2–10, and interface states density of the order of 1011-1012 eV−1 cm−2 were measured. Their electrical breakdown field was in the range of 4.5–7.6 MVcm−1 for films deposited at 500 and 550°C and a thickness under 43 nm.

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“…54 The LaAlO 3 films remained amorphous after postdeposition annealing ͑PDA͒ at 1000°C in N 2 or O 2 , but were found to exhibit a better thermal stability in contact with Si when annealed in a N 2 ambient. Applying still a different deposition method, another work 55 reported on a study of LaAlO 3 films grown on Si using CVD. Also here, the analysis revealed the occurrence of an interlayer between the oxide and the Si substrate inferred as made up of compositionally graded La-Al-Si-O silicate rather than pure SiO x .…”

Section: The "100…si / Laalo 3 Structurementioning

confidence: 99%

Paramagnetic point defects in (100)Si∕LaAlO3 structures: Nature and stability of the interface

Clémer

Stesmans

Afanasʼev

et al. 2007

Journal of Applied Physics

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The atomic nature of the interface in ͑100͒Si/ LaAlO 3 structures with nanometer-thin amorphous LaAlO 3 layers of high dielectric constant ͑͒, deposited directly on clean ͑100͒Si by molecular beam deposition at ϳ100°C, was assessed through probing of paramagnetic point defects. On the as-grown samples K-band electron spin resonance indicated the absence of a Si/ SiO 2-type interface in terms of the archetypal Si-dangling bond-type Si/ SiO 2 interface defects ͑P b0 , P b1 ͒. With no P b-type defects observed, this state is found to persist during subsequent annealing ͑1 atm N 2 or 5% O 2 in N 2 ambient͒ up to the temperature T an ϳ 800°C, referring to a thermally stable abrupt Si/ LaAlO 3 interface, quite in contrast with other high-metal oxide/Si structures. However, in the range T an ϳ 800-860°C a Si/ SiO 2-type interface starts forming as evidenced by the appearance of P b0 defects and, with some delay in T an , the EX center-a SiO 2 associated defect, attesting to significant structural/compositional modification. The peaking of the defect density versus T an curves indicates the SiO x nature of the interlayer to break up again upon annealing at T an ജ 930°C, possibly related to crystallization and/or degrading silicate formation. No specific LaAlO 3-specific point defects could be traced.

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Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

Cited by 7 publications

References 20 publications

Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3(001)

Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3(001)

Characterization of Lanthanum-Aluminum Oxide Thin Films Deposited by Spray Pyrolysis

Paramagnetic point defects in (100)Si∕LaAlO3 structures: Nature and stability of the interface

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