DOI: 10.31274/etd-20210114-66
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Interfacial thermal conductance between monolayer WSe<sub>2</sub> and SiO<sub>2</sub> with consideration of radiative electron-hole recombination

Abstract: This work reports the interfacial thermal conductance (G) and radiative recombination efficiency (β)also known as photoluminescence quantum yield (PL QY)of monolayer WSe2 flakes supported by fused silica substrate via state-resolved energy transport Raman (ET-Raman). This is the first known work to consider the effect of radiative electron-hole recombination on the thermal transport characteristics of single layer transition metal dichalcogenides (TMDs). ET-Raman uses a continuous wave laser for steady state h… Show more

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