Interfamily economic grants of the elderly

Scholl, Kathleen K.; Scholl, John D.

doi:10.1007/bf02300167

Atlantic Economic Journal

1982

DOI: 10.1007/bf02300167

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Interfamily economic grants of the elderly

Kathleen K. Scholl

John D. Scholl

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1996

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High-field fast-risetime pulse failures in 4H- and 6H-SiC pn junction diodes

Neudeck

Fazi

1996

Journal of Applied Physics

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We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3x 1017 cm -3) small-area micropipe-free 4H-and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.[S0021-8979(96)06114-2]

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High-field fast-risetime pulse failures in 4H- and 6H-SiC pn junction diodes

Neudeck

Fazi

1996

Journal of Applied Physics

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show abstract

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Interfamily economic grants of the elderly

Cited by 1 publication

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High-field fast-risetime pulse failures in 4H- and 6H-SiC pn junction diodes

High-field fast-risetime pulse failures in 4H- and 6H-SiC pn junction diodes

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