Interference-induced metalliclike behavior of a two-dimensional hole gas in an asymmetricGaAs∕InxGa1−x

G. M. Minkov

¹

,

А. В. Германенко

²

,

О. Э. Рут

³

et al.

Magnetic properties of GaAs/δ〈Mn〉/GaAs/In x Ga1 − x As/GaAs quantum wells

“…Temperature dependence of R xx in A resistance is nonexponential (activation energy is zero). This dependence is similar (except of the hump) to that in analogous structures without the Mn δ-layer and well described by quantum corrections to conductivity [23]. This statement is supported by analysis of the magnetoresistance and the temperature dependence of the conductivity.…”

Manipulation of dangling bonds of interfacial states coupled in GeTe-rich GeTe/Sb2Te3 superlattices

“…The WAL effect derives from a correction (Δσ) to electronic transport owing to the time-reversed closed trajectory of coherent electrons, which acquires a relative phase of π 40 , 41 . Because the topological surface and bulk states can both act as conducting channels and contribution to the WAL effect with different underlying mechanisms 41 , the existence of interfacial states, as well as the coupling strength, can be resolved from different WAL parameters deduced from the temperature dependence of Δσ and magnetoresistance 42 , 43 . The contribution of the WAL effect to the temperature dependence of Δσ can be quantitatively described by 43 , 44 : Here, the subscript 2D indicates the equation is only valid for a two-dimensional system, T 0 is the reference temperature, and p equals 1 for electron-electron inelastic scattering at low T. The prefactor α represents the coherently independent conducting channel number as each channel can contribute 0.5 to α 39 , 44 .…”

“…3(c) , the conductance σ showed a logarithmic T (lnT) dependence, decreasing at low temperature and zero magnetic field. When a magnetic field of 5 T was applied, the sign of dσ/dT changed from negative to positive below 4 K. This change can be explained by the semi-Boltzmann transport model corrected for 2D quantum interference 42 , written as σ = σ 0 + Δσ WAL + Δσ EEI , where σ 0 is the Drude conductance, which saturates at low temperature 42 . The quantum correction Δσ WAL arising from the WAL effect tends to be suppressed at low magnetic field and is described by Eq.…”

Universal behavior of magnetoresistance in quantum dot arrays with different degrees of disorder

“…The WI regime is the case close to the metal-to-insulator transition where k F l 1 and G(0) G 0 . A special name for this regime was introduced because the MR is still well described by the WL expression (7) with reduced pre-factor α and fitted parameter L * φ L φ [22]. In particular, the authors of Ref.…”

“…When fitting their result, authors of Ref. [22] assumed the cut-off length L * φ is given by the empirical expression…”