Interlayer coupling in rotationally faulted multilayer graphenes

Mele, Eugene J.

doi:10.1088/0022-3727/45/15/154004

Cited by 75 publications

(75 citation statements)

References 37 publications

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“…3). This picture is quite consistent with many previous studies utilizing different approaches [11][12][13][14][15][17][18][19][20][21] . The gap may be viewed as a consequence of hybridization between the states located at the Dirac points of two graphene layers K θ and K ′ (and K and K ′ θ ).…”

Section: Large Twist Angles θ > θCsupporting

confidence: 93%

Electronic spectrum of twisted bilayer graphene

et al. 2015

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We study the electronic properties of twisted bilayers graphene in the tight-binding approximation. The interlayer hopping amplitude is modeled by a function, which depends not only on the distance between two carbon atoms, but also on the positions of neighboring atoms as well. Using the Lanczos algorithm for the numerical evaluation of eigenvalues of large sparse matrices, we calculate the bilayer single-electron spectrum for commensurate twist angles in the range 1• . We show that at certain angles θ greater than θc ≈ 1.89• the electronic spectrum acquires a finite gap, whose value could be as large as 80 meV. However, in an infinitely large and perfectly clean sample the gap as a function of θ behaves non-monotonously, demonstrating exponentially-large jumps for very small variations of θ. This sensitivity to the angle makes it impossible to predict the gap value for a given sample, since in experiment θ is always known with certain error. To establish the connection with experiments, we demonstrate that for a system of finite sizeL the gap becomes a smooth function of the twist angle. If the sample is infinite, but disorder is present, we expect that the electron mean-free path plays the same role asL. In the regime of small angles θ < θc, the system is a metal with a well-defined Fermi surface which is reduced to Fermi points for some values of θ. The density of states in the metallic phase varies smoothly with θ.

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Section: Large Twist Angles θ > θCsupporting

confidence: 93%

Electronic spectrum of twisted bilayer graphene

et al. 2015

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“…[10] Location of a graphene layer on top of another layer perturbs the p electron system substantially. [11] The TB model of bilayer graphene is properly described in Ref. [12].…”

Section: Introductionmentioning

confidence: 99%

Many‐body effects in optical response of graphene‐based structures

Bulusheva

Sedelnikova

Окотруб

2015

Int J of Quantum Chemistry

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Graphene is an exciting material for optoelectronics and plasmonics. Its optical response may be changed under mechanical action, such as stretching or corrugation, and with confinement of a size in a certain direction. Theoretical investigations play an important role in interpretation of experimental data and stimulating a search for novel graphene architectures. Thereby, it is important to analyze restrictions of modern approaches in calculation of optical properties of graphene-based objects and, particularly, to reveal an impact of electron-electron and electron-hole interactions on the position and shape of optical features. Here, we review the recent progress in quantum-chemical calculations of monolayer and few-layer graphenes, graphene ripples, and dots in a light of optical excitations.

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“…TBG will not, therefore, necessarily respond in a manner analogous to monolayer graphene. Rather, the rotational faults provide a degree of freedom that alters the band structure in a way that is yet to be fully understood [15,16].…”

Section: Introductionmentioning

confidence: 99%

Long-range atomic ordering and variable interlayer interactions in two overlapping graphene lattices with stacking misorientations

et al. 2012

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The low energy electronic dispersion of graphene is extremely sensitive to the nearest layer interaction and thus the stacking sequence. Here, we report a method to examine the effect of stacking misorientation in bilayer graphene by transferring chemical vapor deposited (CVD) graphene onto monolithic graphene epitaxially grown on silicon carbide (SiC) (0001). The resulting hybrid bilayer graphene displays long-range Moiré diffraction patterns having various misorientations even as it exhibits electron reflectivity spectra nearly identical to epitaxial bilayer graphene grown directly on SiC. These varying twist angles affect the 2D (G')-band shape of the Raman spectrum indicating regions of both a monolayer-like single π state and Bernal-like split π states brought about by the differing interlayer interactions. This hybrid bilayer graphene fabricated via a transfer process therefore offers a means to systematically study the electronic properties of bilayer graphene films as a function of stacking misorientation angle.

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Interlayer coupling in rotationally faulted multilayer graphenes

Abstract: Abstract. This article reviews progress in the theoretical modelling of the electronic structure of rotationally faulted multilayer graphenes.

Cited by 75 publications

References 37 publications

Electronic spectrum of twisted bilayer graphene

Electronic spectrum of twisted bilayer graphene

Many‐body effects in optical response of graphene‐based structures

Long-range atomic ordering and variable interlayer interactions in two overlapping graphene lattices with stacking misorientations

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