Interlayer-Engineered Local Epitaxial Templating Induced Enhancement in Polarization (2Pr
 &gt; 70 μC/cm2) in Hf0.5Zr0.5O2 Thin Films

Rowtu, Srinu; Meihar, Paritosh; Pandey, Adityanarayan H.; Ali, Md. Hanif; Lashkare, Sandip; Ganguly, Udayan

doi:10.1109/ted.2023.3277804

IEEE Trans. Electron Devices

2023

DOI: 10.1109/ted.2023.3277804

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Interlayer-Engineered Local Epitaxial Templating Induced Enhancement in Polarization (2P_r > 70 μC/cm²) in Hf_0.5Zr_0.5O₂ Thin Films

Srinu Rowtu

Paritosh Meihar

Adityanarayan H. Pandey

et al.

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Cited by 5 publications

References 33 publications

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Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf_0.5Zr_0.5O₂ Grown by Atomic Layer Epitaxy

Jiang,

Lin,

Shiojiri

et al. 2024

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Ferroelectric properties of Hf0.5Zr0.5O2 are strongly correlated with its crystallographic orientation, with the [001] direction serving as the polar axis. However, the epitaxial growth of highly polar‐axis‐oriented Hf0.5Zr0.5O2 layers with pronounced ferroelectricity is rarely reported. Here epitaxial (001)‐oriented Hf0.5Zr0.5O2 thin films grown by atomic layer epitaxy (ALE) is demonstrated, which achieve a state‐of‐the‐art ferroelectric polarization up to 78.9 µC cm−2. The epitaxial Hf0.5Zr0.5O2 layer experiences a lattice reorientation from (010) to (001) during the wake‐up process, as evidenced by plane‐view precession electron diffraction. Accordingly, a two‐step, 90° ferroelastic domain switching model is proposed to elucidate multiple polarization switching. Furthermore, the observed polarization switching dynamics closely match with the time‐resolved negative capacitance, which is quantified as an equivalent high dielectric constant of −170. This study highlights the capability of ALE to precisely control the crystallographic orientation of Hf0.5Zr0.5O2 thin films, providing deep insights into fundamental ferroelectric mechanisms.

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Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf_0.5Zr_0.5O₂ Grown by Atomic Layer Epitaxy

Jiang,

Lin,

Shiojiri

et al. 2024

Small

View full text Add to dashboard Cite

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Functional interface layer for a high-performance self-rectifying memristive device using hafnium-zirconia thin film

Jeong,

Jung,

Seo

et al. 2024

Results in Engineering

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Ferroelectricity in Ultrathin HfO₂-Based Films by Nanosecond Laser Annealing

Athle,

Hill,

Irish

et al. 2024

ACS Appl. Mater. Interfaces

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Nonvolatile memory devices based on ferroelectric Hf x Zr1–x O2 (HZO) show great promise for back-end integrable storage and for neuromorphic accelerators, but their adoption is held back by the inability to scale down the HZO thickness without violating the strict thermal restrictions of the Si CMOS back end of line. In this work, we overcome this challenge and demonstrate the use of nanosecond pulsed laser annealing (NLA) to locally crystallize areas of an ultrathin (3.6 nm) HZO film into the ferroelectric orthorhombic phase. Meanwhile, the heat induced by the pulsed laser is confined to the layers above the Si, allowing for back-end compatible integration. We use a combination of electrical characterization, nanofocused scanning X-ray diffraction (nano-XRD), and synchrotron X-ray photoelectron spectroscopy (SXPS) to gain a comprehensive view of the change in material and interface properties by systematically varying both laser energy and the number of laser pulses on the same sample. We find that NLA can provide remanent polarization up to 2P r= 11.6 μC/cm2 in 3.6 nm HZO, albeit with a significant wake-up effect. The improved TiN/HZO interface observed by XPS explains why device endurance goes beyond 107 cycles, whereas an identical film processed by rapid thermal processing (RTP) breaks already after 106 cycles. All in all, NLA provides a promising approach to scale down the ferroelectric oxide thickness for emerging HZO ferroelectric devices, which is key for their integration in scaled process nodes.

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Interlayer-Engineered Local Epitaxial Templating Induced Enhancement in Polarization (2P_r > 70 μC/cm²) in Hf_0.5Zr_0.5O₂ Thin Films

Cited by 5 publications

References 33 publications

Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf_0.5Zr_0.5O₂ Grown by Atomic Layer Epitaxy

Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf_0.5Zr_0.5O₂ Grown by Atomic Layer Epitaxy

Functional interface layer for a high-performance self-rectifying memristive device using hafnium-zirconia thin film

Ferroelectricity in Ultrathin HfO₂-Based Films by Nanosecond Laser Annealing

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Interlayer-Engineered Local Epitaxial Templating Induced Enhancement in Polarization (2Pr > 70 μC/cm2) in Hf0.5Zr0.5O2 Thin Films

Cited by 5 publications

References 33 publications

Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf0.5Zr0.5O2 Grown by Atomic Layer Epitaxy

Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf0.5Zr0.5O2 Grown by Atomic Layer Epitaxy

Functional interface layer for a high-performance self-rectifying memristive device using hafnium-zirconia thin film

Ferroelectricity in Ultrathin HfO2-Based Films by Nanosecond Laser Annealing

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Product

Resources

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Interlayer-Engineered Local Epitaxial Templating Induced Enhancement in Polarization (2P_r > 70 μC/cm²) in Hf_0.5Zr_0.5O₂ Thin Films

Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf_0.5Zr_0.5O₂ Grown by Atomic Layer Epitaxy

Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf_0.5Zr_0.5O₂ Grown by Atomic Layer Epitaxy

Ferroelectricity in Ultrathin HfO₂-Based Films by Nanosecond Laser Annealing