Since
the rise of two-dimensional (2D) semiconductors, it seems
that electronic devices will soon be upgraded with spintronics, in
which the manipulation of spin degree of freedom endows it obvious
advantages over conventional charge-based electronics. However, as
the most crucial prerequisite for the above-mentioned expectation,
2D semiconductors with adjustable magnetic interaction are still rare,
which has greatly hampered the promotion of spintronics. Recently,
transition metal phosphates have attracted tremendous interest due
to their intrinsic antiferromagnetism and potential applications
in spintronics. In the work described herein, parasitic ferromagnetism
is achieved for the first time by exfoliating an antiferromagnetic
chalcogenophosphate to a few layers. Taking the transition metal
chalcogenophosphate Mn2P2S6 as an example, the antiferromagnetic transition at the Néel
temperature is completely suppressed, and the magnetic behaviors of
the as-obtained few-layered Mn2P2S6 are dominated by parasitic ferromagnetism. We experimentally verify
an electron redistribution by which part of the Mn 3d electrons migrate
and redistribute on P atoms in few-layered Mn2P2S6 due to the introduced Mn vacancies. The results demonstrated
here broaden the tunability of the material’s magnetic properties
and open up a new strategy to rationally design the magnetic behaviors
of 2D semiconductors, which could accelerate the applications of spintronics.