Interlayer nanoparticles of copper, nickel, and silver in Bi2Te3

Cu2Te Incorporation-Induced High Average Thermoelectric Performance in p-Type Bi2Te3 Alloys

“…As a typical transition-metal dopant candidate, Cu has been investigated in several kinds of TE materials and consistently brought positive effects, − especially in improving TE performance for Bi 2 Te 3 -based alloys. The Cu atom was found to be inserted or substituted into the Bi 2 Te 3 -based lattice, showing amphoteric behavior, and could even be precipitated during fabrication technique changes. − Cu addition also prevents the oxidation of Bi 2 Te 3 and improves the reproducibility of the results. , Furthermore, it has been demonstrated that the Cu dopant can enlarge the band gap of Cu-modified (Bi, Sb) 2 Te 3 , and how the Cu doping amount can effectively modulate the TE properties in p -type Bi 2 Te 3 -based alloys. Nevertheless, the practical implementation of TE devices is limited by the hitherto lower average figure of merit ( zT ave ∼ 1 in the temperature range of 300–500 K), and the role of Cu in the electronic structures and phonon dynamics of p -type (Bi, Sb) 2 Te 3 materials remains elusive to the best of our knowledge.…”

Formation of Cu nanoparticles in layered Bi2Te3 and their effect on ZT enhancement

“…They focused on the effect of Cu on carrier concentration and electronic properties. [11][12][13][14][15] Despite the considerable research on this material, the effects of Cu intercalation on the thermoelectric properties of Bi 2 Te 3 have not yet been systematically studied.…”

Electrochemical, optical, and magnetic properties of Ni x InSe (0 < x ≤ 1) intercalation compounds

“…As shown by Kakhramanov [19] and Aleskerov and Kakhramanov [20], the intercalation of Ві 2 Те 3 with metal (Cu, Ag, and Ni) atoms leads to accumulation, redistribution, and formation of intercalate nanoinclusions in inter layer spaces along the plane of the (0001) layers; that is, an additional layer of metal nanoinclusions forms in the crystal lattice. A similar result was obtained by Bakhtinov et al [11], who found that intercalation of the layered semiconductor In 2 Se 3 with cobalt in a static magnetic field led to the formation of fcc Co nanostructures in the van der Waals gaps.…”