Interlayer quality dependent graphene spin valve

Iqbal, Muhammad Zahir; Hussain, Ghulam; Siddique, Salma; Iqbal, Muhammad Waqas; Murtaza, Ghulam; Ramay, Shahid M.

doi:10.1016/j.jmmm.2016.09.008

Cited by 17 publications

(9 citation statements)

References 32 publications

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“…The I 2D /I G ratio is calculated to be %4.5, showing monolayer of graphene. [36][37][38][39][40][41][42][43][44][45] The basic purpose of this is to take the advantage of electron spin for device applications. [32,33] Lastly, we performed Raman spectroscopy for Gr-hBN heterostructure, as shown in Figure 2c.…”

Section: Resultsmentioning

confidence: 99%

Spin Valve Effect of 2D‐Materials Based Magnetic Junctions

Iqbal

Siddique

Hussain³

2017

Adv Eng Mater

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The magnetotransport properties of spin valve structure are highly influenced by the type of intervening layer inserted between the ferromagnetic electrodes. In this scenario, spin filtering effect at the interfaces plays a crucial role in determining the magnetoresistance (MR) of such magnetic structures, which can be enhanced by using a suitable intervening layer. Here, the authors investigate the spin filtering effect of the two-dimensional layers such as hexagonal boron nitride (hBN), graphene (Gr), and Gr-hBN hybrid system for modifying the magnetotransport characteristics of the vertical spin valve architectures (Ni/hBN/Ni, Ni/Gr/Ni, and Ni/Gr-hBN/Ni). Compared to graphene, hBN incorporated magnetic junction reveals higher MR and spin polarizations (P) suggesting better spin filtering at the interfaces. The MR for hBN incorporated junction is calculated to be %0.83%, while that of graphene junction it is estimated to be %0.16%. Similar contrast is observed in the 'P' of ferromagnets (FMs) for the two junctions, that is, %6.4% for hBN based magnetic junction and %2.8% for graphene device. However, for Gr-hBN device, the signal not only get inverts, but it also suggests efficient spin filtering mechanism at the FM interfaces. Their results can be useful to comprehend the origin of spin filtering and the choice of non-magnetic spacer for magnetotransport characteristics.

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Section: Resultsmentioning

confidence: 99%

Spin Valve Effect of 2D‐Materials Based Magnetic Junctions

Iqbal

Siddique

Hussain³

2017

Adv Eng Mater

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“…This is in consistence with most of the recent experimental results. [24][25][26][28][29][30] As previously reported, it is believed that there exists a strong hybridization between the π orbitals of graphene and the metal d states of FM electrode, which gives rise to the formation of the hybridization-induced electronic states of graphene around the Fermi energy. [35] This is the key factor resulting in the ohmic contact and metallic transport behavior in our devices.…”

Section: Resultsmentioning

confidence: 77%

“…Given this, a variety of graphene-based MTJs with current-perpendicularto-the-plane (CPP) geometry have been successively realized experimentally. [20,[24][25][26][27][28][29][30] Nowadays, the interface between the graphene interlayer and the bottom FM layer is formed mainly by transferring graphene (grown through chemical vapor deposition (CVD) or mechanically exfoliated from graphite flake) onto the bottom electrode. [20,[24][25][26] It is almost inevitable to introduce the oxidation and contamination into the graphene/FM interface because the bottom electrode is exposed to air in the fabrication process and this impure interface may induce the spin-flip scattering.…”

Section: Introductionmentioning

confidence: 99%

“…According to these considerations, we chose the NiFe film as the FM electrode material. Although the wet transfer method has been reported for fabricating NiFe/graphene/NiFe vertical junctions, [24,25] the anisotropic magnetoresistance (AMR) contribution to the magnetoresistance (MR) effect was not studied. According to the early report, a significant AMR signal was observed in the NiFe/graphene/NiFe devices with exfoliated graphene, [32] so it must be excluded by some powerful experimental evidences.…”

Section: Introductionmentioning

confidence: 99%

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Magnetoresistance effect in vertical NiFe/graphene/NiFe junctions

Li¹,

Peng²,

Hu³

et al. 2022

Chinese Phys. B

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For convenient and efficient verification of the magnetoresistance effect in graphene spintronic devices, vertical magnetic junctions with monolayer graphene sandwiched between two NiFe electrodes are fabricated by a relatively simple way of transferring CVD graphene onto the bottom ferromagnetic stripes. The anisotropic magnetoresistance contribution is excluded by the experimental result of magnetoresistance (MR) ratio dependence on the magnetic field direction. The spin-dependent transport measurement reveals two distinct resistance states switching under an in-plane sweeping magnetic field. A magnetoresistance ratio of about 0.17 % is obtained at room temperature and it shows a typical monotonic downward trend with the bias current increasing. This bias dependence of MR further verifies that the spin transport signal in our device is not from the anisotropic magnetoresistance. Meanwhile, the I–V curve is found to manifest a linear behavior, which demonstrates the Ohmic contacts at the interface and the metallic transport characteristic of vertical graphene junction.

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“…Especially for spintronic applications, the interface is a key issue [41]. To investigate the interface quality in our transfer method, we further fabricate a WSe2 vertical spin valve in which bilayer WSe2 is sandwiched between two ferromagnetic (FM) electrodes (NiFe and Co) and served as the nonmagnetic spacer layer [42].…”

Section: Transfer Of 2d Materials With Pre-deposited Metal Filmsmentioning

confidence: 99%

Movable-Type Transfer and Stacking of van der Waals Heterostructures for Spintronics

et al. 2020

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The key to achieving high-quality van der Waals heterostructure devices made from various two-dimensional (2D) materials lies in the control over clean and flexible interfaces. However, existing transfer methods based on different mediators possess insufficiencies including the presence of residues, the unavailability of flexi ble interface engineering, and the selectivity towards materials and substrates since their adhesions differ considerably with the various preparation conditions, from chemical vapor deposition (CVD) growth to mechanical exfoliation. In this paper, we intr oduce a more universal method using a prefabricated polyvinyl alcohol (PVA) film to transfer and stack 2D materials, whether they are prepared by CVD or exfoliation. This peel-off and drop-off technique promises an ideal interface of the materials without introducing contamination. In addition, the method exhibits a micron-scale spatial transfer accuracy and meets special experimental conditions such as the preparation of twisted graphene and the 2D/metal heterostructure construction. We illustrate the superiority of this method with a WSe2 vertical spin valve device, whose performance verifies the applicability and advantages of such a method for spintronics. Our PVA-assisted transfer process will promote the development of high-performance 2D-material-based devices.

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Interlayer quality dependent graphene spin valve

Cited by 17 publications

References 32 publications

Spin Valve Effect of 2D‐Materials Based Magnetic Junctions

Spin Valve Effect of 2D‐Materials Based Magnetic Junctions

Magnetoresistance effect in vertical NiFe/graphene/NiFe junctions

Movable-Type Transfer and Stacking of van der Waals Heterostructures for Spintronics

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