Interlayer Transition Induced Infrared Response in ReS₂/2D Perovskite van der Waals Heterostructure Photodetector

Abstract

The emerging Ruddlesden−Popper two-dimensional perovskite (2D PVK) has recently joined the family of 2D semiconductors as a potential competitor for building van der Waals (vdW) heterostructures in future optoelectronics. However, to date, most of the reported heterostructures based on 2D PVKs suffer from poor spectral response that is caused by intrinsic wide bandgap of constituting materials. Herein, a direct heterointerface bandgap (∼0.4 eV) between 2D PVK and ReS 2 is demonstrated. The strong interlayer coupling reduces the energy interval at the heterojunction region so that the heterostructure shows high sensitivity with the spectral response expanding to 2000 nm. The large type-II band offsets exceeding 1.1 eV ensure fast photogenerated carriers separation at the heterointerface. When this heterostructure is used as a self-driven photodetector, it exhibits a record high detectivity up to 1.8 × 10 14 Jones, surpassing any reported 2D selfdriven devices, and an impressive external quantum efficiency of 68%.

Self-Driven UVC–NIR Broadband Photodetector with High-Temperature Reliability Based on a Coco Palm-Like MoS2/GaN Heterostructure

“…Recently, van der Waals (vdW) materials have extensively been used as PDs and are also being used as {visible (Vis) or near-infrared (NIR)} active materials in heterostructures for the fabrication of broadband PDs. − This is attributable to their quantum confinement, which provides additional sites for photoabsorption to boost charge carriers in fabricated devices significantly . These vdW semiconductors can be integrated with GaN thin-film materials using the vdW force.…”

Flexible Self-Powered Vertical Photodetectors Based on the [001]-Oriented CsPbBr3 Film

“…The responsivity and the power density could be fitted to the relational expression R ∼ P light (β–1) . Here, β is the constant calculated to be about 0.882, indicating the loss of photon carriers in Figure c . The PDs exhibit an EQE of 7.98% at 405 nm, which is calculated from responsivity (Figure S4, Supporting Information) using the equation EQE = Rhc /( e λ), where h is Planck’s constant, c is the speed of light, e is the electronic charge, and λ is the incident light wavelength .…”

“…Here, β is the constant calculated to be about 0.882, indicating the loss of photon carriers in Figure 4c. 46 The PDs exhibit an EQE of 7.98% at 405 nm, which is calculated from responsivity (Figure S4, Supporting Information) using the equation EQE = Rhc/ (eλ), where h is Planck's constant, c is the speed of light, e is the electronic charge, and λ is the incident light wavelength. 47 The larger R and D* further confirm that the Au/CsPbBr 3 /Au PDs have an excellent light detection ability.…”

Photocatalytic Applications of ReS2-Based Heterostructures

“…The two-step method means that the growth of heterostructures is carried out in two separated steps. These methods can realize the high-quality and large-area preparation of single-crystal ReS 2 , which has been widely used in micro-nano electronic devices and photoelectric detection fields [ 22 , 23 , 76 ]. A substantial amount of work has reported the CVD preparation and growth mechanism of ReS 2 heterostructure; readers can refer to the related papers [ 72 , 73 , 74 , 75 , 77 , 78 ] and reviews [ 79 ].…”

“…As a newly emerged member of the 2D TMDs family, ReS 2 has been widely studied in the fields of electronics [ 18 , 19 ], optoelectronics [ 20 , 21 , 22 , 23 , 24 ], and catalysis [ 25 , 26 , 27 , 28 ] due to its advantageous features such as a large surface area, tunable active sites, layer-independent electric/optical properties, and structural/vibrational anisotropy. ReS 2 crystallizes in a twisted T phase with clusters of Re 4 units, forming one-dimensional chains in each single layer [ 29 ].…”