2022
DOI: 10.1021/acsami.2c04308
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Intermediate-Phase-Modified Crystallization for Stable and Efficient CsPbI3 Perovskite Solar Cells

Abstract: All-inorganic CsPbI3 perovskite solar cells (PSCs) are becoming desirable for their excellent photovoltaic ability and adjustable crystal structure distortion. However, the unsatisfactory crystallization of the perovskite phase is unavoidable and leads to challenges on the road to the development of high-quality CsPbI3 perovskite films. Here, we reported the intermediate-phase-modified crystallization (IPMC) method, which introduces pyrrolidine hydroiodide (PI) before the formation of the perovskite phase. The… Show more

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Cited by 17 publications
(7 citation statements)
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“…The trap state density ( N t ) was calculated by V TFL using eqn (3): V TFL = eN t L 2 / 2 ε r ε 0 where e is the elementary charge, N t is the trap state density, L is the film thickness, ε 0 is the vacuum permittivity, and ε r is the relative permittivity of CsPbI 3 . 43 As expected, the IT1.5-CsPbI 3 film exhibited a lower trap state density ( N t = 1.016 × 10 15 cm −3 ) than the pristine CsPbI 3 film ( N t = 1.680 × 10 15 cm −3 ), well-confirming the reduced defects.…”
Section: Resultssupporting
confidence: 78%
See 1 more Smart Citation
“…The trap state density ( N t ) was calculated by V TFL using eqn (3): V TFL = eN t L 2 / 2 ε r ε 0 where e is the elementary charge, N t is the trap state density, L is the film thickness, ε 0 is the vacuum permittivity, and ε r is the relative permittivity of CsPbI 3 . 43 As expected, the IT1.5-CsPbI 3 film exhibited a lower trap state density ( N t = 1.016 × 10 15 cm −3 ) than the pristine CsPbI 3 film ( N t = 1.680 × 10 15 cm −3 ), well-confirming the reduced defects.…”
Section: Resultssupporting
confidence: 78%
“…where e is the elementary charge, N t is the trap state density, L is the lm thickness, 3 0 is the vacuum permittivity, and 3 r is the relative permittivity of CsPbI 3 . 43 As expected, the IT1.5-CsPbI 3 lm exhibited a lower trap state density (N t = 1.016 × 10 15 cm −3 ) than the pristine CsPbI 3 lm (N t = 1.680 × 10 15 cm −3 ), well-conrming the reduced defects. CsPbI 3 C-PSCs with the architecture of FTO/compact TiO 2 / meso-TiO 2 /CsPbI 3 /carbon were fabricated by directly painting commercial carbon paste on the perovskite lms, followed by annealing at 100 °C.…”
Section: Resultssupporting
confidence: 71%
“…where 𝜖 0 is the vacuum permittivity, 𝜖 is the relative permittivity of CsPbI 3 perovskite, L is the thickness of the perovskite films, e is the basic charge. [55] The CsPbI 3 device exhibits a V TFL of 1.14 V, which is reduced to 0.87 V for the CsPbI 3 /ASNPbI 3 device, corresponding to the reduction of the N t from 4.80 × 10 15 cm −3 to 3.66 × 10 15 cm −3 . Therefore, the SCLC results further confirm that the formation of the ASNPbI 3 layer has well suppressed the generation of crystal defects for lowering trap state density in CsPbI 3 perovskite.…”
Section: Resultsmentioning
confidence: 94%
“…The trap state density ( N t ) can be calculated by the trap‐filled limit voltage ( V TFL ) using Equation (3): VTFLbadbreak=()eL2Nt/()2ε0ε$$\begin{equation}{V}_{{\mathrm{TFL}}} = \left( {e{L}^2{N}_t} \right)/\left( {2{\varepsilon }_0\varepsilon } \right)\end{equation}$$where ε 0 is the vacuum permittivity, ε is the relative permittivity of CsPbI 3 perovskite, L is the thickness of the perovskite films, e is the basic charge. [ 55 ] The CsPbI 3 device exhibits a V TFL of 1.14 V, which is reduced to 0.87 V for the CsPbI 3 /ASNPbI 3 device, corresponding to the reduction of the N t from 4.80 × 10 15 cm −3 to 3.66 × 10 15 cm −3 . Therefore, the SCLC results further confirm that the formation of the ASNPbI 3 layer has well suppressed the generation of crystal defects for lowering trap state density in CsPbI 3 perovskite.…”
Section: Resultsmentioning
confidence: 99%
“…Recently, the performance of inorganic perovskite solar cells has developed rapidly due to the fabrication of a high-quality CsPbI 3 film and the stabilization of its photoactive black phase. Researchers have been working on a variety of strategies to improve the performance of the black-phase CsPbI 3 , including additive engineering, constituent engineering, and organic cation surface engineering, by introducing long-chain amine cations, polymers, and polar organic molecules into the CsPbI 3 precursor solution to passivate defects, improve film quality, and stabilize the photoactive phase of CsPbI 3 . These strategies have promoted the stability and PCE of CsPbI 3 -based devices.…”
Section: Introductionmentioning
confidence: 99%