Segregated impurities at grain boundaries can dramatically change the mechanical behavior of metals, while the mechanism is still obscure in some cases. Here, we suggest a unified approach to investigate segregation and its effects on the mechanical properties of polycrystalline alloys using the example of 3sp impurities (Mg, Al, Si, P, or S) at a special type 5(310) [001] tilt grain boundary in Cu. We show that for these impurities segregating to the grain boundary, the strain contribution to the work of grain boundary decohesion is small and that the chemical contribution correlates with the electronegativity difference between Cu and the impurity. The strain contribution to the work of dislocation emission is calculated to be negative, while the chemical contribution is calculated to be always positive. Both the strain and chemical contributions to the work of dislocation emission generally become weaker with the increasing electronegativity from Mg to S. By combining these contributions together, we find, in agreement with experimental observations, that a strong segregation of S can reduce the work of grain boundary separation below the work of dislocation emission, thus embrittling Cu, while such an embrittlement cannot be produced by a P segregation because it lowers the energy barrier for dislocation emission relatively more than for work separation. DOI: 10.1103/PhysRevMaterials.1.070602Impurity-induced embrittlement accounts for many notorious cases of brittle failure of polycrystalline metals [1][2][3]. Bismuth-embrittled nickel and copper are well-known cases of such an embrittlement and, therefore, they have been extensively studied [1,[4][5][6]. The impurity-induced embrittlement was attributed either to a chemical effect of the Bi segregation, which is believed to change the bonding strength at grain boundaries (GBs) [1,6], or to a size (strain) effect that is associated with the size misfit of Bi in the Cu lattice [4,5]. However, no theory could explain the remarkable difference between the effects of P and S on the ductility of polycrystalline copper [7,8]. Segregated S at GBs is strongly detrimental and several ppm of residual S can remarkably embrittle copper [3,9,10]. However, the addition of about 50 wt ppm of the neighboring element P can cure the Cu embrittlement problem and recover the ductility of polycrystalline copper [8]. Evidently, the atomistic mechanism of grain boundary deformation with segregated impurities needs further clarification.In this Rapid Communication, we suggest a unified approach based on first-principles calculations with which the segregation of 3sp impurities at extended defects and the segregation effects on the mechanical behavior of polycrystalline copper can be investigated. Our analysis shows that Mg, Al, and Si do not embrittle Cu, P can improve the ductility of polycrystalline copper, and S can cause intergranular embrittlement of Cu. The chemical and size effects on both the work of GB decohesion (also called work of separation W sep ) and the work requir...