Intermetallic phase formation and shear strength of a Au-In microjoint

Shieu, Fuh‐Sheng; Chen, Chong-kun; Sheen, Jyh; Chang, Zue-Chin

doi:10.1016/s0040-6090(98)01737-4

Cited by 29 publications

(18 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In particular, the shear strength is generally not high in the Au/In system. 3,4,12 However, the poor mechanical properties can be improved by introducing a polymeric underfill. A proper underfill can also reduce the local stress arising from repeated mechanical, electrical, and thermal cyclings.…”

Section: Microstructure Of Au/in Tlp Bondingmentioning

confidence: 99%

“…In fact, the interdiffusion between Au and In can occur even at -50°C, and is believed to be the fastest among those of the transition metals. 11,12 This indicates that the interval between solder deposition and subsequent dicing and bonding processes should not be too long when Au and In need to be deposited sequentially. Moreover, during the temperature ramp-up of the bonding process, a certain amount of indium will also be transformed into intermetallic compounds.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Study of the Au/In Reaction for Transient Liquid-Phase Bonding and 3D Chip Stacking

Zhang

Ruythooren

2008

Journal of Elec Materi

View full text Add to dashboard Cite

The latest three-dimensional (3D) chip-stacking technology requires the repeated stacking of additional layers without remelting the joints that have been formed at lower levels of the stack. This can be achieved by transient liquid-phase (TLP) bonding whereby intermetallic joints can be formed at a lower temperature and withstand subsequent higher-temperature processes. In order to develop a robust low-temperature Au/In TLP bonding process during which all solder is transformed into intermetallic compounds, we studied the Au/In reaction at different temperatures. It was shown that the formation kinetics of intermetallic compounds is diffusion controlled, and that the activation energy of Au/In reaction is temperature dependent, being 0.46 eV and 0.23 eV for temperatures above and below 150°C, respectively. Moreover, a thin Ti layer between Au and In was found to be an effective diffusion barrier at low temperature, while it did not inhibit joint formation at elevated temperatures during flip-chip bonding. This allowed us to control the intermetallic formation during the distinct stages of the TLP bonding process. In addition, a minimal indium thickness of 0.5 lm is required in order to enable TLP bonding. Finally, Au/In TLP joints of [40 lm to 60 lm were successfully fabricated at 180°C with very small solder volume (1 lm thickness).

show abstract

Section: Microstructure Of Au/in Tlp Bondingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Study of the Au/In Reaction for Transient Liquid-Phase Bonding and 3D Chip Stacking

Zhang

Ruythooren

2008

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…7,8) In electronic packaging application, indium solders are selectively used in where their unique properties are essential, for example flip chip interconnections of Josephson devices, glass-sealing alloys of 52In-42Sn, cryogenic solders for thin film joining, thermally conductive die attachment in a multichip module, and Pb-In alloys for controlled collapse chip connection (C4) application. [9][10][11] During soldering, the solder alloy melts and reacts with the substrate to form intermetallic compounds at the joining interface. The intermetallic layers increase in thickness with time in a thermally activated manner.…”

Section: Introductionmentioning

confidence: 99%

Reaction Diffusion and Formation of Cu11In9 and In27Ni10 Phases in the Couple of Indium-Substrates

et al. 2003

View full text Add to dashboard Cite

The reaction diffusion between indium solder and Au deposited (Ni and Cu) substrates was investigated. For the identification of intermetallic compounds, both Scanning Electron Microscopy (SEM) and X-Ray Diffractometry (XRD) were employed. Experimental results showed that the intermetallic compounds, such as Cu 11 In 9 and In 27 Ni 10 , were observed for different substrates, respectively. Additionally, the growth rate of these intermetallic compounds was increased with the reaction temperature and time. We found that the growth of the intermetallic compound follows the parabolic law, which indicates that layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range. The apparent activation energies for intermetallic compound growth were 37.06 kJ/mol for Cu 11 In 9 and 86.14 kJ/mol for In 27 Ni 10 , respectively.

show abstract

“…[2][3][4] As shown in Fig. 1, the solid solubility of In in Ag is much higher (approximately 20 at.% In in Ag) than that of Ag in In (<1 at.% Ag in In).…”

Section: Introductionmentioning

confidence: 82%

Study of Low-Temperature Thermocompression Bonding in Ag-In Solder for Packaging Applications

Made

Gan

Yan

et al. 2008

Journal of Elec Materi

View full text Add to dashboard Cite

Low-temperature solders have wide applications in integrated circuits and micro-electromechanical systems packaging. In this article, a study on Ag-In solder for chip-to-chip thermocompression bonding was carried out. The resulting joint consists of AgIn 2 and Ag 9 In 4 phases, with the latter phase having a melting temperature higher than 400°C. Complete consumption of In solder into a Ag-rich intermetallic compound is achieved by applying a bond pressure of 1.4 MPa at 180°C for 40 min. We also observe that the bonding pressure effect enables a Ag-rich phase to be formed within a shorter bonding duration (10 min) at a higher pressure of 1.6 MPa. Finally, prolonged aging leads to the formation of the final phase of Ag 9 In 4 in the bonded joints.

show abstract

Intermetallic phase formation and shear strength of a Au-In microjoint

Abstract: Indiutn and its alloys exhibit good service life and reliability, and are well suited for applications such as solder interconnections in

Cited by 29 publications

References 8 publications

Study of the Au/In Reaction for Transient Liquid-Phase Bonding and 3D Chip Stacking

Study of the Au/In Reaction for Transient Liquid-Phase Bonding and 3D Chip Stacking

Reaction Diffusion and Formation of Cu<SUB>11</SUB>In<SUB>9</SUB> and In<SUB>27</SUB>Ni<SUB>10</SUB> Phases in the Couple of Indium-Substrates

Study of Low-Temperature Thermocompression Bonding in Ag-In Solder for Packaging Applications

Contact Info

Product

Resources

About