Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

Soares, Gabriel Vieira; Krug, Cristiano; Miotti, Leonardo; Bastos, Karen Paz; Lucovsky, G.; Baumvol, Israel Jacob Rabin; Radtke, C.

doi:10.1063/1.3574093

Cited by 4 publications

(1 citation statement)

References 12 publications

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“…These results indicate that even after the structural changes , there is now detectable oxygen loss from the films, within the sensitivity of the technique. Moreover, no Ge incorporation in the HfO 2 could be observed, which has been reported for HfO 2 /GeO 2 stacks on Ge (13).…”

Section: Resultsmentioning

confidence: 57%

Hydrogen Interaction with HfO₂ Films Deposited on Ge(100) and Si(100)

et al. 2013

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In the present work we investigated the thermally-driven hydrogen incorporation in HfO2 films deposited on Si and Ge substrates. Two incorporation regimes were identified, one in the 200-400ºC temperature range and another one in the 400-600ºC temperature range. D incorporation was higher for films deposited on Si for all investigated temperatures, indicating a higher density of sites for D incorporation, probably near the HfO2/Si interface. HfO2 films undergo structural changes during annealing in the high temperature regime, crystallizing in the monoclinic and in the cubic phase. No oxygen or hafnium desorption were observed after annealings, as well as no Ge incorporation in the HfO2 film.

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Section: Resultsmentioning

confidence: 57%

Hydrogen Interaction with HfO₂ Films Deposited on Ge(100) and Si(100)

et al. 2013

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Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling

Han

Zhang

Osada

et al. 2013

Microelectronic Engineering

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Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation

Zhang

Huang

Taoka

et al. 2016

Applied Physics Letters

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We have demonstrated a low temperature formation (300 °C) of higher-k HfO2 using atomic layer deposition (ALD) on an in-situ thermal oxidation GeOx interfacial layer. It is found that the cubic phase is dominant in the HfO2 film with an epitaxial-like growth behavior. The maximum permittivity of 42 is obtained for an ALD HfO2 film on a 1-nm-thick GeOx form by the in-situ thermal oxidation. It is suggested from physical analyses that the crystallization of cubic phase HfO2 can be induced by the formation of six-fold crystalline GeOx structures in the underlying GeOx interfacial layer.

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Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

Cited by 4 publications

References 12 publications

Hydrogen Interaction with HfO₂ Films Deposited on Ge(100) and Si(100)

Hydrogen Interaction with HfO₂ Films Deposited on Ge(100) and Si(100)

Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling

Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation

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Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

Cited by 4 publications

References 12 publications

Hydrogen Interaction with HfO2 Films Deposited on Ge(100) and Si(100)

Hydrogen Interaction with HfO2 Films Deposited on Ge(100) and Si(100)

Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling

Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation

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Product

Resources

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Hydrogen Interaction with HfO₂ Films Deposited on Ge(100) and Si(100)

Hydrogen Interaction with HfO₂ Films Deposited on Ge(100) and Si(100)