Intermixing in self-assembled InAs quantum dot formation

Heyn, Ch.; Bolz, A.; Maltezopoulos, Theophilos; Johnson, R.L.; Hansen, W.

doi:10.1016/j.jcrysgro.2004.12.055

Cited by 37 publications

(6 citation statements)

References 9 publications

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“…We observe that has a temperature-activated behavior, increasing strongly above a critical temperature, which depends on the InAs growth rate. Since negligible intermixing has been reported for low growth rates 10,20 we attribute this strong increase to In desorption. In these conditions, the growth rate R G can be expressed as R G = R dep − R des .…”

Section: Structural Characterizationmentioning

confidence: 81%

Structural and optical properties of low-density and In-rich InAs∕GaAs quantum dots

Alloing

Zinoni

et al. 2007

Journal of Applied Physics

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Self-assembled InAs/ GaAs quantum dots have been grown at very low InAs growth rate in order to form sparse and large quantum dots ͑QDs͒ emitting in the near infrared ͑1300-1400 nm͒, for application as single-photon sources. The structural and optical properties of these QDs as a function of the growth rate were systematically investigated. The QDs grown at the lowest rate ͑ϳ10 −3 ML/ s͒ present a very low dot density ͑ϳ2 ϫ 10 8 dots/ cm 2 ͒, high In content, and good size homogeneity. Photoluminescence and time-resolved photoluminescence measurements performed at different powers and temperatures provide information on their luminescence efficiency, and on the recombination processes occurring in the low-density QDs as compared to higher densities.

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Section: Structural Characterizationmentioning

confidence: 81%

Structural and optical properties of low-density and In-rich InAs∕GaAs quantum dots

Alloing

Zinoni

et al. 2007

Journal of Applied Physics

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“…For a long time, the only known method for the production of epitaxially grown zerodimensional system was the strain-induced method, based on lattice mismatch. Presently, the most used technique is the lattice-mismatched technique by the Stranski-Krastanov mode [1][2][3][4][5]. QDs, such as InAs nanocluster prepared on GaAs surface, are the oldest known system.…”

Section: Introductionmentioning

confidence: 99%

Quantum Dots Prepared by Droplet Epitaxial Method

Nemcsics¹

2015

Quantum Dots - Theory and Applications

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In this work, we are dealing with the droplet epitaxially prepared quantum dots. This technology is not only an alternative way of the strain induced technique to prepare quantum dots, but it allows us to make various shaped nano structures from various material. The present paper deals not only with the so called conventional shaped quantum dot but also with the ring shaped dot, with the inverted dot and with dot molecules as well. Their thechnology, opto-electronical and the structural properties are also discussed.

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“…16 It was reported that when QDs are grown at approximately 500°C; a large composition gradient from GaAs to InAs due to the intermixing effect is formed up to ϳ3 nm above the wetting layer. 17 In such a situation, electrons are pushed toward the apex of the QDs by the potential gradient and the effective confinement size of the electrons in the QDs becomes smaller than that determined by SEM measurements, as schematically shown in the inset of Fig. 3.…”

mentioning

confidence: 95%