Intermodulation Linearity in High-k/Metal Gate 28 nm RF CMOS Transistors

Li, Zhen; Niu, Guofu; Liang, Qi; Imura, Keiichiro

doi:10.3390/electronics4030614

Cited by 4 publications

(2 citation statements)

References 7 publications

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“…Modern communication systems are increasingly relying on digital signal processing, and the availability of the signal in digital form allows calibration in the digital domain, enabling the so-called digitally assisted analog electronics [1,2], where digital calibration is used to improve the performance of analog blocks. For instance, power amplifiers [3][4][5][6], IQ mixers [7,8] and ADCs [9][10][11][12][13] can be digitally enhanced, correcting nonlinear errors, I/Q mismatches, channel mismatches, etc. In particular, calibration can be used to reduce the nonlinearity of system components, and even of the entire system [14][15][16][17], by correcting nonlinear errors and improve the dynamic range of the system.…”

Section: Introductionmentioning

confidence: 99%

Methods for Model Complexity Reduction for the Nonlinear Calibration of Amplifiers Using Volterra Kernels

et al. 2022

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Volterra models allow modeling nonlinear dynamical systems, even though they require the estimation of a large number of parameters and have, consequently, potentially large computational costs. The pruning of Volterra models is thus of fundamental importance to reduce the computational costs of nonlinear calibration, and improve stability and speed, while preserving accuracy. Several techniques (LASSO, DOMP and OBS) and their variants (WLASSO and OBD) are compared in this paper for the experimental calibration of an IF amplifier. The results show that Volterra models can be simplified, yielding models that are 4–5 times sparser, with a limited impact on accuracy. About 6 dB of improved Error Vector Magnitude (EVM) is obtained, improving the dynamic range of the amplifiers. The Symbol Error Rate (SER) is greatly reduced by calibration at a large input power, and pruning reduces the model complexity without hindering SER. Hence, pruning allows improving the dynamic range of the amplifier, with almost an order of magnitude reduction in model complexity. We propose the OBS technique, used in the neural network field, in conjunction with the better known DOMP technique, to prune the model with the best accuracy. The simulations show, in fact, that the OBS and DOMP techniques outperform the others, and OBD, LASSO and WLASSO are, in turn, less efficient. A methodology for pruning in the complex domain is described, based on the Frisch–Waugh–Lovell (FWL) theorem, to separate the linear and nonlinear sections of the model. This is essential because linear models are used for equalization and cannot be pruned to preserve model generality vis-a-vis channel variations, whereas nonlinear models must be pruned as much as possible to minimize the computational overhead. This methodology can be extended to models other than the Volterra one, as the only conditions we impose on the nonlinear model are that it is feedforward and linear in the parameters.

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Section: Introductionmentioning

confidence: 99%

Methods for Model Complexity Reduction for the Nonlinear Calibration of Amplifiers Using Volterra Kernels

et al. 2022

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“…The determination of this figure of merit is essential to assess the potential of the device for high-frequency operation. Driven by the ever-growing demand for high-frequency applications, continuous efforts are being made to develop innovative materials and architectures (e.g., high-mobility III-V and Ge channels, high-k dielectrics, and multiple-gates) [1][2][3][4][5]. The intrinsic f T is expected to remarkably increase with decreasing gate length and to be roughly independent of the gate width.…”

Section: Introductionmentioning

confidence: 99%

Effects of Gate-Length Scaling on Microwave MOSFET Performance

2017

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This paper focuses on the extraction of an accurate small-signal equivalent circuit for metal-oxide-semiconductor field-effect transistors (MOSFETs). An analytical modeling approach was developed and successfully validated through the comparison between measured and simulated scattering parameters. The extraction of the equivalent circuit elements allowed for the estimation of the intrinsic unity current-gain cutoff frequency, which is a crucial figure of merit for assessing the high-frequency performance. The experimental data show that the cutoff frequency of the tested devices exhibits a nearly ideal scaling behavior with decreasing gate length.

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Physics, Characterization and Modeling of RF Linearity in SiGe HBT and FinFET Technologies

Niu

2022

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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Intermodulation Linearity in High-k/Metal Gate 28 nm RF CMOS Transistors

Cited by 4 publications

References 7 publications

Methods for Model Complexity Reduction for the Nonlinear Calibration of Amplifiers Using Volterra Kernels

Methods for Model Complexity Reduction for the Nonlinear Calibration of Amplifiers Using Volterra Kernels

Effects of Gate-Length Scaling on Microwave MOSFET Performance

Physics, Characterization and Modeling of RF Linearity in SiGe HBT and FinFET Technologies

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