Internal electrical phase inversion for FF-beam resonator arrays and tuning fork filters

Yan, Jize; Seshia, Ashwin A.; Phan, K.L.; Beek, J.T.M. van

doi:10.1109/memsys.2008.4443834

Cited by 9 publications

(3 citation statements)

References 7 publications

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“…One device is discussed as an example for these type of devices. Other devices that use the same tuning method were reported by Schwab et al [11], Kwon et al [34], Lopez et al [35], Yan et al [36], Stiller et al [37] and Wu et al [38].…”

Section: Electrostaticmentioning

confidence: 77%

A review onin situstiffness adjustment methods in MEMS

Laat

Garza

Herder

et al. 2016

J. Micromech. Microeng.

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In situ stiffness adjustment in microelectromechanical systems is used in a variety of applications such as radio-frequency mechanical filters, energy harvesters, atomic force microscopy, vibration detection sensors. In this review we provide designers with an overview of existing stiffness adjustment methods, their working principle, and possible adjustment range. The concepts are categorized according to their physical working principle. It is concluded that the electrostatic adjustment principle is the most applied method, and narrow to wide ranges in stiffness can be achieved. But in order to obtain a wide range in stiffness change, large, complex devices were designed. Mechanical stiffness adjustment is found to be a space-effective way of obtaining wide changes in stiffness, but these methods are often discrete and require large tuning voltages. Stiffness adjustment through stressing effects or change in Young’s modulus was used only for narrow ranges. The change in second moment of inertia was used for stiffness adjustment in the intermediate range.

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Section: Electrostaticmentioning

confidence: 77%

A review onin situstiffness adjustment methods in MEMS

Laat

Garza

Herder

et al. 2016

J. Micromech. Microeng.

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“…The other performance metrics, such as insertion loss, passband ripple, etc., are competitive with the filters mentioned in Refs. [16,25,26]. In this work, the demonstrated narrowband filter provides a novel approach to realize high frequency-selectivity RF channelselect filters with relatively small size and low complexity.…”

Section: Resultsmentioning

confidence: 99%

A mechanically coupled MEMS filter with high-Q width extensional mode resonators

Wang,

Liu,

Zhao

et al. 2024

J. Semicond.

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This work presents a novel radio frequency (RF) narrowband Si micro-electro-mechanical systems (MEMS) filter based on capacitively transduced slotted width extensional mode (WEM) resonators. The flexibility of the plate leads to multiple modes near the target frequency. The high Q-factor resonators of around 100 000 enable narrow bandwidth filters with small size and simplified design. The 1-wavelength and 2-wavelength WEMs were first developed as a pair of coupled modes to form a passband. To reduce bandwidth, two plates are coupled with a λ-length coupling beam. The 79.69 MHz coupled plate filter (CPF) achieved a narrow bandwidth of 8.8 kHz, corresponding to a tiny 0.011%. The CPF exhibits an impressive 34.84 dB stopband rejection and 7.82 dB insertion loss with near-zero passband ripple. In summary, the RF MEMS filter presented in this work shows promising potential for application in RF transceiver front-ends.

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“…Several efforts have been made to minimize this effect. Van Beek et al [11][12][13][14] use different methods of phase inversion by means of mechanical or electrical coupling in order to cancel the effects of the feedthrough capacitance and enhance the filter performance. Nguyen's group has proposed a differential array filter, where the arrays are coupled to generate out of phase motional currents [15].…”

Section: Introductionmentioning

confidence: 99%

A fully integrated programmable dual-band RF filter based on electrically and mechanically coupled CMOS-MEMS resonators

Giner¹,

Uranga²,

Munoz-Gamarra³

et al. 2012

J. Micromech. Microeng.

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In this paper, a novel fully integrated CMOS-MEMS filter implemented on a commercial CMOS technology is presented. The combination of mechanical and electrical coupling is used to enhance the response of the band pass filter. In particular, a 20 dB shape factor as low as 2 and a 35 dB stopband rejection are achieved. Moreover, the topology of the device allows obtaining a dual-bandpass filter behavior, presenting a tunable bandwidth and a deep notch between bands. Results show a dual-band filter with a 22 dB inner stopband rejection, center frequencies at 27.5 and 27.8 MHz, respectively, and a 0.6% relative bandwidth.

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Internal electrical phase inversion for FF-beam resonator arrays and tuning fork filters

Cited by 9 publications

References 7 publications

A review onin situstiffness adjustment methods in MEMS

A review onin situstiffness adjustment methods in MEMS

A mechanically coupled MEMS filter with high-Q width extensional mode resonators

A fully integrated programmable dual-band RF filter based on electrically and mechanically coupled CMOS-MEMS resonators

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