Internal friction study on diffusivity on the CuSiO2 interface

Shigenaka, Naoto; Koda, Motoi; Mori, T.

doi:10.1016/0036-9748(83)90442-8

Cited by 8 publications

(1 citation statement)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, at the temperature range used for the present internal oxidation, the selfdiffusion coefficients of SiO 2 reported in the previous studies [18][19][20] are much smaller than those for possible diffusion mechanisms of the Cu matrix around the SiO 2 phase. 21) This means that the morphological evolution of SiO 2 is controlled by self-diffusion of SiO 2 . Observing shape changes of the SiO 2 particles in Cu single crystals from ellipsoidal to spherical, Stobbs has concluded that the interface-diffusion of Cu atoms along Cu/SiO 2 interface controls the shape changes.…”

Section: Mechanism Of the Morphological Evolutionmentioning

confidence: 99%

Morphological Evolution of Grain-Boundary SiO2 in Internally Oxidized Cu-Si Bicrystals

Sato

Ota

Fujii

et al. 2004

MATERIALS TRANSACTIONS

View full text Add to dashboard Cite

Cu-0.78 mass%Si bicrystals are internally oxidized at various conditions and morphological evolution of amorphous SiO 2 formed on a grain boundary (GB) is observed. After the reaction of Si atoms with oxygen, a film-like SiO 2 phase with holes is initially formed on GB of Cu. At temperatures used for the internal oxidation, the holes rapidly grow and the morphology of the film-like SiO 2 changes to a particulate equilibrium shape through formation of two-dimensional SiO 2 network and its subsequent breakup. During the morphological evolution, the volume of SiO 2 on GB is conserved. The morphological evolution of SiO 2 on GB is caused by diffusional flow of matter to decrease the sum of Cu/SiO 2 interface and Cu grain-boundary energies. The activation energy Q of the morphological evolution is obtained as Q % 290 kJ/mol. Among the values of activation energies reported in the previous studies on diffusion in SiO 2 , Q % 290 kJ/mol is close to that for the volumediffusion of SiO in SiO 2 , Q SiO % 268 kJ/mol. This supports that the morphological evolution of SiO 2 on GB is controlled by the volumediffusion of SiO in SiO 2 .

show abstract