Abstract.With strong THz pulses, we measure ultrafast transport of electrons, holes, and an electron-hole plasma in GaAs. The transition from ballistic to drift-like transport is strongly influenced by electron-hole scattering.In an electric field charge carriers in a semiconductor undergo ballistic transport, i.e., the acceleration is proportional to the field, in the absence of scattering. Since any scattering process takes a finite time, every transport will be ballistic on sufficiently short times [1]. If, as is often the case, the most important scattering process is scattering with optical phonons, the relevant time scale is ≈100 fs, determined by the optical phonon frequency. For times considerably longer than these scattering times, transport will be drift-like, i.e., the carrier velocity is proportional to the field. On intermediate time scales one expects a gradual transition from ballistic to drift-like transport. Intense femtosecond THz pulses allow for driving carrier transport in semiconductors at very high carrier velocities and provide