Internal photoemission in metal/β-FeSi2/Si heterojunctions

Lefki, K.; Muret, Pierre

doi:10.1016/0169-4332(93)90754-y

Cited by 17 publications

(7 citation statements)

References 15 publications

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“…The analysis revealed Ed(RT) = 0.84 eV and Ed( 7 7 K) = 0.875 eV. This transition energy at RT is in agreement with previous optical absorption experiments indicating an energy of about 0.85 eV[7][8][9]. The value for the direct transition at 77 K is in excellent agreement with photoemission…”

supporting

confidence: 87%

“…[6]). The semiconducting 13-FeSi 2 is the most investigated phase because preliminary evaluation of absorption experiments indicated a direct band gap with an energy of about 0.85 eV [7][8][9]. However, these experimental results are in conflict with recent band structure calculations [101.…”

Section: Introductionmentioning

confidence: 81%

“…results of metal/13-FeSi/Si heterojunctions [8] and optical absorption measurements (0.90 eV at 77 K) [11]. A broad tail below 0.…”

Section: Optical Characterization Of Semiconducting 15-fesimentioning

confidence: 98%

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Electrical and Optical Properties of FeSi₂ Layers

et al. 1993

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We fabricated ox-FeSi 2 and 13-FeSi 2 layers by using two methods: Ion Beam Synthesis (IBS) and Molecular Beam Allotaxy (MBA). In the latter technique a trapezoidal-shaped Fe profile was embedded in the Si matrix by codeposition of Si and Fe at temperatures of about 650TC. A rapid thermal anneal of the IBS and MBA samples at 1150'C for 10 s is necessary to obtain continuous a-FeSi 2 layers. The Fe vacancy concentration of the a-FeSi 2 layers was varied by a further anneal at lower temperatures. Resistivity measurements indicate a decrease of the resistivity with decreasing Fe vacancy concentration. The a-FeSi 2 was transformed to a continuous rl-FeSi 2 layer by an anneal at 800'C for several hours. To investigate the nature of the band gap we performed absorption measurements at room temperature and 77 K. The analysis of the room temperature data revealed a direct transition at 0.84 eV and an additional indirect transition at 0.78 eV. At 77 K the direct transition shifts to -0.875 eV and the indirect to -0.86 eV.

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confidence: 87%

Section: Introductionmentioning

confidence: 81%

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Electrical and Optical Properties of FeSi₂ Layers

et al. 1993

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“…Many research groups were able to successfully grow the ␤ phase using ion beam techniques, 3 epitaxial growth on Si, 4 or by depositing a thin iron film on Si, followed by annealing. 5 Subsequent analysis of the samples confirmed the presence of ␤-FeSi 2 with a direct band gap of 0.85-0.90 eV. 6 The existence of an indirect gap several hundredths of an eV smaller was deduced from optical linear transmittance experiments on ␤-FeSi 2 at low temperatures.…”

Section: Introductionmentioning

confidence: 97%

Fe, Ru, and Os disilicides: Electronic structure of ordered compounds

Turchi

Sterne

1996

Phys. Rev. B

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Electronic structure properties of MSi 2 , where MϭFe, Ru, or Os, in the orthorhombic ␤ phase are investigated using the linear muffin-tin orbital method in the atomic sphere approximation. Selective substitution of Fe with Ru, Os, and Cr in ␤-FeSi 2 is also studied. These compounds are small-gap semiconductors with theoretical energy band gaps ranging from 0.06 to 0.50 eV, with the exception of the metallic Cr-substituted disilicides. Substitution of Ru or Os for Fe in ␤-FeSi 2 leads to a reduction of the gap width, an increase in volume of the unit cell, and a bulk modulus similar to or slightly smaller than for ␤-FeSi 2 . Although the theoretical lattice constant of ␤-OsSi 2 agrees well with experiment, the calculated band gap ͑0.06 eV͒ is much smaller than the band gap in ␤-FeSi 2 . This strongly contrasts with experimental observations that suggest a larger band gap in ␤-OsSi 2 ͑1.4 -1.8 eV͒. Consideration of a proposed metastable monoclinic form of OsSi 2 does not remedy this discrepancy, since it is found to be a semimetal.

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“…A large discontinuity of the conduction band ( E c ) between β-FeSi 2 grown by the SPE method and silicon was observed in internal photoemission experiments. 18) The reported value of E c was 0.3 eV. A large E c might be also found for the β-FeSi X /n-Si heterojunctions and the high ideality factors could be attributed to this discontinuity of the heterojunction.…”

Section: Optical Absorption Spectramentioning

confidence: 89%

Optical and Electrical Properties of β-FeSi₂/Si, β-FeSi₂/InP Heterojunction Prepared by RF-Sputtering Deposition

Okajima

Wen

Ihara

et al. 1999

Jpn. J. Appl. Phys.

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The composition dependence of the optical absorption and the photoelectric measurements of β-FeSi X thin films prepared by RF-sputtering were studied, where X was in the range of 1.9-2.3. The absorption coefficient increased steeply at photon energies near 0.9 eV. The photovoltaic properties and the I -V characteristics of β-FeSi X /n-Si heterojunctions were measured. The open-circuit photovoltage (V OC ) was about 40 mV, and independent of X and the substrate temperature. The photoelectric yields of a β-FeSi X /n-Si heterojunctions were measured and the photoemission thresholds φ 1 and φ 2 were determined to be 0.64 and 0.96 eV for X = 2.1. It was suggested that a deep trap level existed on the interface and a large discontinuity of the conduction band ( E c ) was formed. The value of E c decreased from 0.35 eV to 0.30 eV as the value of X increased. In addition, the photovoltaic properties of β-FeSi 2 /InP heterojunctions were investigated to obtain E c lower and V OC higher than that of β-FeSi X /n-Si. For β-FeSi X /p-InP, a maximum V OC of 450 mV was obtained under concentrated illumination.

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Internal photoemission in metal/β-FeSi2/Si heterojunctions

Cited by 17 publications

References 15 publications

Electrical and Optical Properties of FeSi₂ Layers

Electrical and Optical Properties of FeSi₂ Layers

Fe, Ru, and Os disilicides: Electronic structure of ordered compounds

Optical and Electrical Properties of β-FeSi₂/Si, β-FeSi₂/InP Heterojunction Prepared by RF-Sputtering Deposition

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Internal photoemission in metal/β-FeSi2/Si heterojunctions

Cited by 17 publications

References 15 publications

Electrical and Optical Properties of FeSi2 Layers

Electrical and Optical Properties of FeSi2 Layers

Fe, Ru, and Os disilicides: Electronic structure of ordered compounds

Optical and Electrical Properties of β-FeSi2/Si, β-FeSi2/InP Heterojunction Prepared by RF-Sputtering Deposition

Contact Info

Product

Resources

About

Electrical and Optical Properties of FeSi₂ Layers

Electrical and Optical Properties of FeSi₂ Layers

Optical and Electrical Properties of β-FeSi₂/Si, β-FeSi₂/InP Heterojunction Prepared by RF-Sputtering Deposition