Internal quantum efficiency behavior of a‐plane and c‐plane InGaN/GaN multiple quantum well with different indium compositions

Wang, Te Chung; Ko, Tsung-Shine; Lu, Tien−Chang; Kuo, Hao Chung; Gao, R. C.; Tsay, Jenq Dar; Wang, Sing Chung

doi:10.1002/pssc.200778503

Cited by 3 publications

(1 citation statement)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…phire substrates using conventional two-step growth technique. 8 Four samples with identical structure and 10 pairs of 4.5-nm-thick InGaN well/18-nm-thick GaN barrier MQWs were under the same growth condition except for the growth temperature. The growth temperature for the four samples was controlled at 870, 850, 830, and 810°C, respectively.…”

Section: Methodsmentioning

confidence: 99%

Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions

Chiu

Kuo

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

In x Ga 1−x N / GaN ͑x = 0.09, 0.14, 0.24, and 0.3͒ multiple-quantum-wells ͑MQWs͒ samples, with a well width of about 4.5 nm, were achieved by utilizing r-plane sapphire substrates. Optical quality was investigated by means of photoluminescence ͑PL͒, cathodoluminescence, and time resolved PL measurements ͑TRPL͒. Two distinguishable emission peaks were examined from the low temperature PL spectra, where the high-and low-energy peaks were ascribed to quantum wells and localized states, respectively. Due to an increase in the localized energy states and absence of quantum confined Stark effect, the quantum efficiency was increased with increasing indium composition up to 24%. As the indium composition reached 30%, however, pronounced deterioration in luminescence efficiency was observed. The phenomenon could be attributed to the high defect densities in the MQWs resulted from the increased accumulation of strain between the InGaN well and GaN barrier. This argument was verified from the much shorter carrier lifetime at 15 K and smaller activation energy for In 0.3 Ga 0.7 N / GaN MQWs. In addition, the polarization-dependent PL revealed that the degree of polarization decreased with increasing indium compositions because of the enhancement of zero-dimensional nature of the localizing centers. Our detailed investigations indicate that the indium content in a-plane InGaN/GaN MQWs not only has an influence on optical performance, but is also important for further application of nitride semiconductors.

show abstract

Section: Methodsmentioning

confidence: 99%

Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions

Chiu

Kuo

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes

Chen 陈,

Zhao 赵,

Liang 梁

et al. 2024

Chinese Phys. B

View full text Add to dashboard Cite

Multidimensional influence of indium composition in barrier layers on GaN-based blue laser diodes (LDs) are discussed through both material quality and device physics perspectives. LDs with higher indium content in the barriers demonstrate a notably lower threshold current and shorter lasing wavelength compared to those with lower indium content. Our experiments reveal that higher indium content in the barrier layers can partially reduce indium composition in the quantum wells, a novel discovery. Employing higher indium content barrier layers leads to improved luminescence properties of MQW region. Detailed analysis reveals that this improvement can be attributed to better homogeneity in the indium composition of the well layers along the epitaxy direction. InGaN barrier layers suppressed lattice mismatch between barrier and well layers, thus mitigating the indium content pulling effect in well layers. In supplement to experimental analysis, theoretical computations are performed, showing that InGaN barrier structures can effectively enhance carrier recombination efficiency and optical confinement of LD structure, thus improving output efficiency of GaN-based blue LDs. Combining these theoretical insights with our experimental data, we propose that higher indium content barriers effectively enhance carrier recombination efficiency and indium content homogeneity in quantum well layers, thereby improving the output performance of GaN-based blue LDs.

show abstract

Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layers

Zhu¹,

Cai²,

Li³

et al. 2010

Acta Phys. Sin.

View full text Add to dashboard Cite

InGaN/GaN triangular shaped multiple quantum wells (MQWs) grown on sapphire substrate were adopted as an active layer of light-emitting diodes (LEDs) by modulating In content in well layers. The temperature dependence of the normalized integrated photoluminescence (PL) intensity showed that the overlap of the electron and hole wave-functions of the LEDs with triangular shaped MQW is much higher than that of the LEDs with conventional rectangular MQW structures, which improves the internal quantum efficiency (IQE) to a certain degree. On the other hand, it was found that the blue shift of the peak energy as a function of injection current is improved for the device with triangular shaped MQW structure from the electroluminescence (EL) spectra of the two series devices. The comparison above indicates that the triangular MQW LEDs are more efficient and more stable.

show abstract

Internal quantum efficiency behavior of a‐plane and c‐plane InGaN/GaN multiple quantum well with different indium compositions

Cited by 3 publications

References 7 publications

Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions

Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions

Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes

Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layers

Contact Info

Product

Resources

About