Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

Iida, Daisuke; Fadil, Ahmed; Chen, Yuntian; Ou, Yiyu; Kopylov, Oleksii; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Ou, Haiyan

doi:10.1063/1.4931948

Cited by 22 publications

(21 citation statements)

References 35 publications

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“…Meanwhile, the EQEs of the UV, blue, and green LEDs with PHP are increased up to 8.2%, 58.3%, and 30.6%, respectively. Those EQE values are somewhat lower than that of recently reported maximum values 93940. Internal quantum efficiencies of the UV (43.0%), blue (64.5%), and green (12.7%) LEDs, even though these are lower than reported maximum values414243, are almost not changed due to significantly small hole depth of 40 nm.…”

Section: Resultscontrasting

confidence: 62%

Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns

Jeong

Salas‐Montiel

Lerondel

et al. 2017

Sci Rep

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In this study, we investigated the improvement in the light output power of indium gallium nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by fabricating shallow periodic hole patterns (PHPs) on the LED surface through laser interference lithography and inductively coupled plasma etching. Noticeably, different enhancements were observed in the light output powers of the UV, blue, and green LEDs with negligible changes in the electrical properties in the light output power versus current and current versus voltage curves. In addition, confocal scanning electroluminescence microscopy is employed to verify the correlation between the enhancement in the light output power of the LEDs with PHPs and carrier localization of InGaN/GaN multiple quantum wells. Light propagation through the PHPs on the UV, blue, and green LEDs is simulated using a three-dimensional finite-difference time-domain method to confirm the experimental results. Finally, we suggest optimal conditions of PHPs for improving the light output power of InGaN LEDs based on the experimental and theoretical results.

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Section: Resultscontrasting

confidence: 62%

Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns

Jeong

Salas‐Montiel

Lerondel

et al. 2017

Sci Rep

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“…All though the penetration depth was enhanced at large excitation density, the enhancement ratio was reduced. This is consistent with the inverse relationship between the theoretically expected IQE enhancement and the initial IQE without Ag NPs [19,24]. With the increase of excitation power, the density of state of LSP becomes saturated.…”

Section: Resultssupporting

confidence: 88%

“…Such a large aspect ratio was chosen to minimize the change of light extraction efficiency (LEE) caused by the curved shape of the microcave. The absorption coefficient of p-GaN at 405 nm (excitation) and 445 nm (emission) are about 100 and 20 cm −1 respectively [19]. This is equivalent to the change of LEE about 1 × 10 −3 .…”

Section: Methodsmentioning

confidence: 92%

Nanoscale Characterization of Surface Plasmon-Coupled Photoluminescence Enhancement in Pseudo Micro Blue LEDs Using Near-Field Scanning Optical Microscopy

Zhang

et al. 2020

Nanomaterials

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The microcave array with extreme large aspect ratio was fabricated on the p-GaN capping layer followed by Ag nanoparticles preparation. The coupling distance between the dual-wavelength InGaN/GaN multiple quantum wells and the localized surface plasmon resonance was carefully characterized in nanometer scale by scanning near-field optical microscopy. The effects of coupling distance and excitation power on the enhancement of photoluminescence were investigated. The penetration depth was measured in the range of 39-55 nm depending on the excitation density. At low excitation power density, the maximum enhancement of 103 was achieved at the optimum coupling distance of 25 nm. Time-resolved photoluminescence shows that the recombination life time was shortened from 5.86 to 1.47 ns by the introduction of Ag nanoparticle plasmon resonance.Nanomaterials 2020, 10, 751 2 of 10 given by Z = λ/2π[(ε GaN -ε metal )/ε metal 2 ] 1/2 where ε GaN and ε metal are the real parts of the dielectric

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“…, as the ratio of the PL integrated intensity (in the 3.2-3.65 eV range) at each temperature relative to that at the lowest temperature (5 K) by assuming that the non-radiative channels are inactive at 5 K (in line with the approach used in Rashba's treatment). [37][38][39] The IQE of S1 is found slightly higher than that of S2 in the measured temperature range. At RT, S1 had an IQE of 2.6%, whereas S2 had an IQE of 1.8%.…”

mentioning

confidence: 60%

GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

Ajia

Yamashita²,

Lorenz

et al. 2018

Applied Physics Letters

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GaN/AlGaN multiple quantum wells (MQWs) are grown on a 2 01-oriented β-Ga2O3 substrate. The optical and structural characterizations of the MQW structure are compared with a similar structure grown on sapphire. Scanning transmission electron microscopy and atomic force microscopy images show that the MQW structure exhibits higher crystalline quality of welldefined quantum wells, when compared to a similar structure grown on sapphire. X-ray diffraction rocking curve and photoluminescence excitation analyses confirm a lower density of dislocation defects in the sample grown on β-Ga2O3 substrate. Detailed analysis of time-integrated and time

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Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

Cited by 22 publications

References 35 publications

Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns

Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns

Nanoscale Characterization of Surface Plasmon-Coupled Photoluminescence Enhancement in Pseudo Micro Blue LEDs Using Near-Field Scanning Optical Microscopy

GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

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