Internal strain energy of ternary solid solutions of cubic modification

Elyukhin, V.A.; Nikishin, S. A.

doi:10.1088/0268-1242/11/6/011

Cited by 36 publications

(18 citation statements)

References 13 publications

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“…All these experimental observation are in qualitative agreement with the results of theoretical predictions of the miscibility gap carried out for ternary nitrides [6], [7], [8]. According to [7], [8] the critical temperature corresponding to InGaN spinodal decomposition is ≈ 1200 ° C, and the stable ternary compound with In content higher than 10% can not be obtained up to the growth temperature of 800 ° C. These results have been obtained using the Valence Force Field (VFF) approach for the analysis of lattice distortion.…”

Section: Introductionsupporting

confidence: 89%

“…If the interface is oriented parallel to the hexagonal axis of the crystal the respective expressions for chemical potentials are (6) Here ∆ B αβ ( α , β = x,z ) denote the difference between the respective effective elastic constants of binary compounds AC and BC. Similar expressions valid for cubic modification of group-III nitrides are given in [16].…”

Section: Theorymentioning

confidence: 99%

“…According to [7], [8] the critical temperature corresponding to InGaN spinodal decomposition is ≈ 1200 ° C, and the stable ternary compound with In content higher than 10% can not be obtained up to the growth temperature of 800 ° C. These results have been obtained using the Valence Force Field (VFF) approach for the analysis of lattice distortion. The authors of [6] gave all the more hard estimates for critical temperature:…”

Section: Introductionmentioning

confidence: 99%

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Suppression of phase separation in InGaN due to elastic strain

Karpov¹

1998

MRS Internet j. nitride semicond. res.

185

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The effect of elastic strain in epitaxial InGaN layers coherently grown on GaN wafers on spinodal decomposition of the ternary compound is examined. The effect results in considerable suppression of phase separation in the strained InGaN layers. To predict correctly the position of the miscibility gap in the T-x diagram it is important to take into account the compositional dependence of the elastic constants of the ternary compound. The contribution of the elastic strain to the Gibbs free energy of InGaN is calculated assuming uniform compression of the epitaxial layer with respect to the underlying GaN wafer. The interaction of binary constituents in the solid phase is accounted for on the base of regular solution model. The enthalpy of mixing is estimated using the Valence Force Field approximation. The strain effect becomes stronger with increasing In content in the InGaN. As a result the miscibility gap shifts remarkably into the area of higher InN concentration and becomes of asymmetrical shape. Various growth surface orientations and the type of crystalline structure (wurtzite or sphalerite) provide different effects of the elastic strain on phase separation in ternary compounds.

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Section: Introductionsupporting

confidence: 89%

Section: Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Suppression of phase separation in InGaN due to elastic strain

Karpov¹

1998

MRS Internet j. nitride semicond. res.

185

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“…This strain is caused by considerable mismatch of the lattice constants of GaN and InN. As a result, the GaInN solid solution exhibits a tendency towards spinodal decomposition [36] [37] or, equivalently, towards formation of a miscibility gap. Dashed and dash-dotted lines in Figure 8 present the spinodal and binodal curves calculated for GaInN ternary compounds using the regular solution approximation.…”

Section: Ternary Compoundsmentioning

confidence: 99%

The role of gaseous species in group-III nitride growth

Karpov¹,

Makarov

Ramm

1997

MRS Internet j. nitride semicond. res.

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A quasi-thermodynamic model accounting for kinetics of molecular nitrogen evaporation is applied to simulate the growth of binary and ternary group-III nitrides using atomic group-III elements and molecular ammonia as the sources. The values of the molecular nitrogen evaporation coefficients from the surface of GaN and AlN necessary for the simulation are extracted from experiments on free evaporation of the crystals in vacuum, while for InN only estimates are available. The growth process of AlN and InN is studied by analyzing the composition of the desorbed vapor species that are thought to influence the native defect formation in group-III nitrides. Different channels of desorption from the surfaces of group-III nitrides (related either to group-III atoms or to their hydrides) are compared. Specific features of the growth processes under the metal-rich and N-rich conditions are analyzed. The developed approach is extended to study the growth of the ternary compounds GaInN and AlGaN. The growth rate of ternary compounds versus temperature shows a two-drop behavior corresponding to the rapid increase of the respective group-III atom desorption. The effect is accompanied by a corresponding stepwise change in the solid phase composition. Factors retarding the growth of ternary compounds -the miscibility gap related to internal strain accumulated in the solid phase due to the lattice mismatch of binary constituents, and the extra liquid phase formation during growth -are discussed with respect to GaInN.

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“…The constants relevant for calculations were taken from [11,17]. As expected, for the GaAs x P 1Àx and Ga x Al 1Àx N alloys having the relatively close lattice constants, the strains are small and the decomposition temperatures relatively low from around room temperature to several tens of Kelvins.…”

Section: Resultsmentioning

confidence: 87%

Thermodynamic Stability of Nonequilibrium Ordered Semiconductor Alloys

Asomoza

Elyukhin

2000

phys. stat. sol. (b)

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The stability of the III–V ternary epitaxially ordered alloys with respect to decomposition and change of the long‐range order degree is discussed by a thermodynamic analysis. The “CuPt”‐type ordered alloys are more stable with respect to decomposition than random, but are unstable with respect to disordering at growth temperatures. The GaAsxN1—x and GaPxN1—x “CuPt”‐ and “WC”‐type ordered alloys can be stable, metastable and unstable at room temperature with respect to disordering in dependence on the composition and the long‐range order degree. Other “CuPt”‐ and “WC”‐type ternary ordered alloys are unstable with respect to disordering at room temperature.

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Internal strain energy of ternary solid solutions of cubic modification

Cited by 36 publications

References 13 publications

Suppression of phase separation in InGaN due to elastic strain

Suppression of phase separation in InGaN due to elastic strain

The role of gaseous species in group-III nitride growth

Thermodynamic Stability of Nonequilibrium Ordered Semiconductor Alloys

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