Internal-strain release and remarkably enhanced energy storage performance in PLZT–SrTiO3 multilayered films

Zhang, A. H.; Wang, Wei; Li, Q. J.; Zhu, Jiangyuan; Wang, D. D.; Lu, Xubing; Yao, Lingmin; Pan, Zhongbin

doi:10.1063/5.0030279

Cited by 12 publications

(5 citation statements)

References 37 publications

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“…Finally, the energy storage density and efficiency of the F8 film in this work are compared with the corresponding values of representative perovskite film capacitors in the recent 2 years, − as shown in Figure i. It is suggested that the F8 film has a considerable role in perovskite energy storage, especially in the comparison of energy storage density.…”

Section: Results and Discussionmentioning

confidence: 82%

Capturing Carriers and Driving Depolarization by Defect Engineering for Dielectric Energy Storage

Zhao

Yang

Liu

et al. 2022

ACS Appl. Mater. Interfaces

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The inevitable defect carriers in dielectric capacitors are generally considered to depress the polarization and breakdown strength, which decreases energy storage performances. Distinctive from the traditional aims of reducing defects as much as possible, this work designs (FeTi ′ – Vo ••)• and (FeTi ″ – Vo ••) defect dipoles by oxygen vacancy defect engineering in acceptor doped Sr2Bi4Ti(5–x)Fe x O18 layered perovskite films with n-type leakage conductance. It is shown that oxygen vacancies effectively capture electrons (carriers) in n-type dielectrics to enhance the breakdown strength. Meanwhile, defect dipoles provide a driving field for depolarization to engineer the generation energy of domains and the domain wall energy, which effectively lowers the residual polarization P r but not at the expense of the maximum polarization P max as relaxor ferroelectric regulations. Such defect engineering effectively breaks through the limitation, in which the energy storage density suffers from the trade-off relationship between polarization and breakdown strength. The Sr2Bi4Ti4.92Fe0.08O18 film with the proper oxygen vacancy content achieves a high energy density of 110.5 J/cm3 and efficiency of 70.0% at a high breakdown strength of 3915 kV/cm. This work explores an alternative way for breakthroughs possible in the intrinsic trade-off relationship to regulate dielectric energy storage by defect engineering.

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Section: Results and Discussionmentioning

confidence: 82%

Capturing Carriers and Driving Depolarization by Defect Engineering for Dielectric Energy Storage

Zhao

Yang

Liu

et al. 2022

ACS Appl. Mater. Interfaces

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“…With increased thickness of STO, the PLZT peak moves to higher angle, demonstrating increased compressive misfit constraint from the STO layer. [31] The cross sectional scanning transmission electron microscopy (STEM) of mica/CFO/SRO/PLZT 85 -STO 15 in Figure 2d reveals clear interfaces between each functional layer, though PLZT and STO cannot be distinguished. The total thickness of CFO/SRO/PLZT-STO is estimated to be 0.55 µm, consistent with AFM measurement, with the thickness of PLZT 85 -STO 15 superlattice estimated to be 0.49 µm.…”

Section: Resultsmentioning

confidence: 99%

Van der Waals Epitaxy Enables Rollable Dielectric Superlattice for Record High Overall Energy Density

Zhong

Chen

Zhang

et al. 2023

Adv Funct Materials

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Nanoengineered polar oxide films have attracted much attention for electric energy storage thanks to their high energy density, though they are all deposited on thick and rigid substrates, resulting in inferior overall energy density and poor manufacturability. Herein, an alternative strategy is developed for oxide dielectrics utilizing van der Waals epitaxy on ultrathin and flexible mica substrate, with a dielectric superlattice of Pb 0.92 La 0.08 (Zr 0.95 Ti 0.05 ) O 3 -SrTiO 3 carefully engineered to break its long-range antiferroelectric polar order. An ultrathin flexible capacitor is obtained as a result, with a record high overall energy density of 12.19 J cm −3 and an efficiency of 90.98%, and there is much room for further improvement since mica substrate can approach 2D limit. The superlattice can be easily rolled for large-scale manufacturing, and the energy storage performances are well maintained under large bending deformation as well as extended bending cycling. The study thus establishes a viable route for dielectric oxide films, paving way for their practical applications in high-energy density capacitors.

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“…As a result, thin films [305] show much higher energy density than bulk materials due to the larger E BDS , as shown Fig. 11c [171,232,235,250,293,299, and 11d [20,89,99,144,181,233,[336][337][338][339][340][341][342][343][344][345][346][347][348][349][350][351][352].…”

Section: Energy-storage Capacitorsmentioning

confidence: 97%

Antiferroelectric oxide thin-films: Fundamentals, properties, and applications

Si,

Zhang,

Liu

et al. 2024

Progress in Materials Science

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Internal-strain release and remarkably enhanced energy storage performance in PLZT–SrTiO3 multilayered films

Cited by 12 publications

References 37 publications

Capturing Carriers and Driving Depolarization by Defect Engineering for Dielectric Energy Storage

Capturing Carriers and Driving Depolarization by Defect Engineering for Dielectric Energy Storage

Van der Waals Epitaxy Enables Rollable Dielectric Superlattice for Record High Overall Energy Density

Antiferroelectric oxide thin-films: Fundamentals, properties, and applications

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