Internally matched GaN FET at C-band with 220W output power and 56% power added efficiency

Maehara, Hiroaki; Uchida, Hirohisa; Kosaka, Naoki; Kuwata, Eigo; Yamanaka, Koji; Nishihara, Jun; Kawashima, K.; Nakayama, Minoru

doi:10.1109/apmc.2012.6421597

Cited by 7 publications

(6 citation statements)

References 14 publications

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“…PAE of 64% was obtained at output power of 110W. The performance is compared with those of the preceding literatures [13]- [17]. The summary is listed in Table 1.…”

Section: Microwave Heating Systemmentioning

confidence: 98%

Recent Progress on Design Method of Microwave Power Amplifier and Applications for Microwave Heating

Ishizaki

Matsumuro

2020

IEICE Trans. Electron.

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Recently, GaN devices are often adopted in microwave power amplifiers to improve the performances. And many new design methods of microwave power amplifier were proposed. As a result, a highefficiency and super compact microwave signal source has become easily available. It opens up the way for new microwave heating systems. In this paper, the recent progress on design methods of microwave power amplifier and the applications for microwave heating are described. In the first, a device model of GaN transistor is explained. An equivalent thermal model is introduced into the electrical non-linear equivalent device model. In the second, an active load-pull (ALP) measurement system to design a highefficiency power amplifier is explained. The principle of the conventional closed-loop ALP system is explained. To avoid the risk of oscillation for the closed-loop ALP system, novel ALP systems are proposed. In the third, a microwave heating system is explained. The heating system monitors the reflection wave. Then, the frequency of the signal source and the phase difference between antennas are controlled to minimize the reflection wave. Absorption efficiency of more than 90% was obtained by the control of frequency and phase. In the last part, applications for a medical instrument is described. key words: GaN power amplifier, pulse-mode operation, active load-pull, microwave heating, frequency and phase control, medical instrument † The authors are with Ryukoku University, Otsu-shi, 520-2194 Japan.

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“…PAE of 64% was obtained at output power of 110W. The performance is compared with those of the preceding literatures [13]- [17]. The summary is listed in Table 1.…”

Section: Microwave Heating Systemmentioning

confidence: 98%

Recent Progress on Design Method of Microwave Power Amplifier and Applications for Microwave Heating

Ishizaki

Matsumuro

2020

IEICE Trans. Electron.

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“…This results in degraded power performance, rather than an optimized output power. Several design techniques are studied and published to resolve this problem [10,11,12,13].…”

Section: Power Amplifier Designmentioning

confidence: 99%

Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells

et al. 2018

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In this paper, we present a Ku-band 50 W internally-matched power amplifier that asymmetrically combines the power transistor cells of the GaN high electron mobility transistor (HEMT) (CGHV1J070D) from Wolfspeed. The amplifier is designed using a large-signal transistor cell model in the foundry process, and asymmetric power combining, which consists of a slit pattern, oblique wire bonding and an asymmetric T-junction, is applied to obtain the amplitude/phase balance of the combined signals at the transistor cell combining position. Input and output matching circuits are implemented using a thin film process on a titanate substrate and an alumina substrate with the relative dielectric constants of 40 and 9.8, respectively. The pulsed measurement of a 330 μs pulse period and 6% duty cycle shows the maximum saturated output power of 57 to 66 W, drain efficiency of 40.3 to 46.7%, and power gain of 5.3 to 6.0 dB at power saturation from 16.2 to 16.8 GHz.

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“…Current HPAs include the L-band 500 W [1] and S-band 800 W [2], but HPAs with output powers of more than 100 W have been reported even in the high frequency bands (C-, X-and Ku-bands) [3,4]. A power added efficiency (PAE) of 80% is achieved for output power of 16.5 W [5].…”

Section: Introductionmentioning

confidence: 99%

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating

Nakatani¹,

Ishizaki²

2015

Journal of electromagnetic engineering and science

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The magnetron, a vacuum tube, is currently the usual high-power microwave power source used for microwave heating. However, the oscillating frequency and output power are unstable and noisy due to the low quality of the high-voltage power supply and low Q of the oscillation circuit. A heating system with enhanced reliability and the capability for control of chemical reactions is desired, because microwave absorption efficiency differs greatly depending on the object being heated. Recent studies on microwave high-efficiency power amplifiers have used harmonic processing techniques, such as class-F and inverse class-F. The present study describes a high-efficiency 100 W GaN-HEMT amplifier that uses a harmonic processing technique that shapes the current and voltage waveforms to improve efficiency. The fabricated GaN power amplifier obtained an output power of 50.4 dBm, a drain efficiency of 72.9%, and a power added efficiency (PAE) of 64.0% at 2.45 GHz for continuous wave operation. A prototype microwave heating system was also developed using this GaN power amplifier. Microwaves totaling 400 W are fed from patch antennas mounted on the top and bottom of the microwave chamber. Preliminary heating experiments with this system have just been initiated. This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/ by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. ⓒ

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Internally matched GaN FET at C-band with 220W output power and 56% power added efficiency

Cited by 7 publications

References 14 publications

Recent Progress on Design Method of Microwave Power Amplifier and Applications for Microwave Heating

Recent Progress on Design Method of Microwave Power Amplifier and Applications for Microwave Heating

Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating

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