Interplay between effects of barrier tilting and scatterers within a barrier on tunneling transport of Dirac electrons in graphene

Anwar, Farhana; Iurov, Andrii; Huang, Danhong; Gumbs, Godfrey; Sharma, Ashwani

doi:10.1103/physrevb.101.115424

Cited by 24 publications

(23 citation statements)

References 52 publications

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“…In recent years, by using the low-energy Dirac Hamiltonian [ 4 ], we have extensively explored varieties of dynamical properties of electrons in graphene and other two-dimensional materials, including Landau quantization [ 18 , 31 , 32 , 33 , 34 , 35 ], many-body optical effects [ 36 , 37 , 38 , 39 , 40 , 41 ], band and tunneling transports [ 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 ], etc. In this paper, we particularly focus on the application of computed electronic states and band structures from a tight-binding model to the calculations of Coulomb and impurity scatterings of electrons in graphene on the basis of a many-body theory [ 3 , 4 ], where the former and latter determine the lineshape [ 1 ] of an absorption peak and the transport mobility [ 44 ], respectively.…”

Section: Introductionmentioning

confidence: 99%

Atomistic Band-Structure Computation for Investigating Coulomb Dephasing and Impurity Scattering Rates of Electrons in Graphene

Huang

Shih

et al. 2021

Nanomaterials

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In this paper, by introducing a generalized quantum-kinetic model which is coupled self-consistently with Maxwell and Boltzmann transport equations, we elucidate the significance of using input from first-principles band-structure computations for an accurate description of ultra-fast dephasing and scattering dynamics of electrons in graphene. In particular, we start with the tight-binding model (TBM) for calculating band structures of solid covalent crystals based on localized Wannier orbital functions, where the employed hopping integrals in TBM have been parameterized for various covalent bonds. After that, the general TBM formalism has been applied to graphene to obtain both band structures and wave functions of electrons beyond the regime of effective low-energy theory. As a specific example, these calculated eigenvalues and eigen vectors have been further utilized to compute the Bloch-function form factors and intrinsic Coulomb diagonal-dephasing rates for induced optical coherence of electron-hole pairs in spectral and polarization functions, as well as the energy-relaxation time from extrinsic impurity scattering of electrons for non-equilibrium occupation in band transport.

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Section: Introductionmentioning

confidence: 99%

Atomistic Band-Structure Computation for Investigating Coulomb Dephasing and Impurity Scattering Rates of Electrons in Graphene

Huang

Shih

et al. 2021

Nanomaterials

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“…Recently, Dirac semimetals also showed some interesting electronic properties, 52,53 although they closely resemble but not completely the same as those of α − T 3 . As a matter of fact, the unique electronic band structure of the α − T 3 model has proven to be responsible for its unusual electronic, optical, collective, magnetic and topological properties [54][55][56][57][58][59][60][61][62][63][64][65][66][67][68][69][70][71][72][73] which have been investigated extensively over the last several year…”

Section: Introductionmentioning

confidence: 99%

Tailoring plasmon excitations in α − T3 armchair nanoribbons

Iurov

Zhemchuzhna

Gumbs

et al. 2021

Preprint

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We have calculated and investigated the electronic states, dynamical polarization function and the plasmon excitations for α − T3 nanoribbons with armchair-edge termination. The obtained plasmon dispersions are found to depend significantly on the number of atomic rows across the ribbon and the energy gap which is also determined by the nanoribbon geometry. The bandgap appears to have the strongest effect on both the plasmon dispersions and their Landau damping. We have determined the conditions when relative hopping parameter α of an α − T3 lattice has a strong effect on the plasmons which makes our material distinguished from graphene nanoribbons. Our results for the electronic and collective properties of α − T3 nanoribbons are expected to find numerous applications in the development of the next-generation electronic, nano-optical and plasmonic devices.

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“…75,76 Technically, however, various types of potential barriers, e.g., inhomogeneous and non-uniform spatial profiles of a potential and junctions, could be easily realized in graphene or a nanoscale-width nanoribbon by introducing a spatially-distributed gate voltage. [77][78][79] As a part of graphene-based optoelectronic device, [80][81][82] studying electron conductance through these different barrier arrangements, as well as revealing involved physics mechanism for ballistic transport, [83][84][85][86] are paramount for quantitatively predicting the current level and characterizing the performance of an electric switch.…”

Section: Introductionmentioning

confidence: 99%

Tunneling conductivity fast modulated by optically-dressed electrons in graphene and a dice lattice

Iurov¹,

Zhemchuzhna²,

Gumbs³

et al. 2021

Preprint

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Interplay between effects of barrier tilting and scatterers within a barrier on tunneling transport of Dirac electrons in graphene

Cited by 24 publications

References 52 publications

Atomistic Band-Structure Computation for Investigating Coulomb Dephasing and Impurity Scattering Rates of Electrons in Graphene

Atomistic Band-Structure Computation for Investigating Coulomb Dephasing and Impurity Scattering Rates of Electrons in Graphene

Tailoring plasmon excitations in α − T3 armchair nanoribbons

Tunneling conductivity fast modulated by optically-dressed electrons in graphene and a dice lattice

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