“…Group IV based materials, germanium (Ge), silicon–germanium (SiGe), and germanium–tin (GeSn), are under consideration for nanoelectronics and photonics. − Due to their high carrier mobilities, supplementing these materials along with tunable compositional In x Ga 1– x As (0.1 ≤ x ≤ 0.4) as channel materials will boost the on-current and ultimately device/circuit performance in an alternate channel CMOS, , tensile-strained Ge/In x Ga 1– x As based tunnel transistors, , energy-efficient SRAM cell architecture for ultralow voltage applications, and photonic devices. ,,, For high-performance ultralow voltage CMOS logic, RF circuits, and mixed signal low-noise amplifier circuits, it is widely accepted that InGaAs and Ge will serve as n -channel and p -channel transistor materials, respectively. ,− However, implementing these two different materials (i.e., Ge and InGaAs) on a Si wafer requires defect-controlled buffer engineering for the monolithic heterogeneous integration process rather than direct growth of Ge or SiGe on Si. Furthermore, Ge is an excellent choice for CMOS logic due to its 2.8× and 4.2× higher electron and hole mobilities, respectively, compared to Si.…”