Interplay of cross-plane polaronic transport and resistive switching in Pt–Pr0.67Ca0.33MnO3–Pt heterostructures

Scherff, Malte; Hoffmann, J.; Meyer, B.-U.; Danz, Thomas; Jooß, Ch.

doi:10.1088/1367-2630/15/10/103008

Cited by 21 publications

(25 citation statements)

References 26 publications

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“…(9) and only two local phonon states are needed to construct the ground state of Eq. (14): the first one is the phonon vacuum state if the site is not occupied by the electron, and the second one is a coherent state of phonons if the site is occupied by the electron. Thus two phonon states (for each site) build an optimal basis for the ground state.…”

Section: A Optimal Phonon Modesmentioning

confidence: 99%

Real-time decay of a highly excited charge carrier in the one-dimensional Holstein model

et al. 2015

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We study the real-time dynamics of a highly excited charge carrier coupled to quantum phonons via a Holstein-type electron-phonon coupling. This is a prototypical example for the nonequilibrium dynamics in an interacting many-body system where excess energy is transferred from electronic to phononic degrees of freedom. We use diagonalization in a limited functional space (LFS) to study the nonequilibrium dynamics on a finite one-dimensional chain. This method agrees with exact diagonalization and the time-evolving block-decimation method, in both the relaxation regime and the long-time stationary state, and among these three methods it is the most efficient and versatile one for this problem. We perform a comprehensive analysis of the time evolution by calculating the electron, phonon and electron-phonon coupling energies, and the electronic momentum distribution function. The numerical results are compared to analytical solutions for short times, for a small hopping amplitude and for a weak electron-phonon coupling. In the latter case, the relaxation dynamics obtained from the Boltzmann equation agrees very well with the LFS data. We also study the time dependence of the eigenstates of the single-site reduced density matrix, which defines the so-called optimal phonon modes. We discuss their structure in nonequilibrium and the distribution of their weights. Our analysis shows that the structure of optimal phonon modes contains very useful information for the interpretation of the numerical data.

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Section: A Optimal Phonon Modesmentioning

confidence: 99%

Real-time decay of a highly excited charge carrier in the one-dimensional Holstein model

et al. 2015

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“…4, we show the systematic dependence of RðtÞ as a function of the applied external (electronic) current. Along with the simulations of the VEOVM, we also present our experimental results measured on a manganite-based (La 0.325 Pr 0.300 Ca 0.375 MnO 3 ) memristive device [34][35][36][37][38]. The experimental setup and device are described in detail in Appendix F and in Ref.…”

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confidence: 99%

Shock Waves and Commutation Speed of Memristors

et al. 2016

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Progress of silicon-based technology is nearing its physical limit, as the minimum feature size of components is reaching a mere 10 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next-generation electronics. Significant progress has already been made in the past decade, and devices are beginning to hit the market; however, this progress has mainly been the result of empirical trial and error. Hence, gaining theoretical insight is of the essence. In the present work, we report the striking result of a connection between the resistive switching and shock-wave formation, a classic topic of nonlinear dynamics. We argue that the profile of oxygen vacancies that migrate during the commutation forms a shock wave that propagates through a highly resistive region of the device. We validate the scenario by means of model simulations and experiments in a manganese-oxide-based memristor device, and we extend our theory to the case of binary oxides. The shock-wave scenario brings unprecedented physical insight and enables us to rationalize the process of oxygen-vacancy-driven resistive change with direct implications for a key technological aspect-the commutation speed. DOI: 10.1103/PhysRevX.6.011028 Subject Areas: Condensed Matter Physics, Materials Science, Nonlinear DynamicsThe information age we live in is made possible by a physical underlayer of electronic hardware, which originates in condensed-matter physics research. Despite the great progress made in recent decades, the demand for faster and power-efficient devices continues to grow. Thus, there is urgent need to identify novel materials and physical mechanisms for future electronic-device applications. In this context, transition metal oxides (TMOs) are attracting much attention for nonvolatile memory applications [1]. In particular, TMO are associated with the phenomenon of resistive switching (RS) [2] and the memristor device [3], which is emerging as a competitive technology for nextgeneration electronics [1,[4][5][6][7][8][9][10]. The RS effect is a large, rapid, nonvolatile, reversible change of the resistance, which may be used to encode logic information. In the simplest case, one may associate high and low resistance values to binary states, but multibit memory cells are also possible [11,12].Typical systems where RS is observed are two-terminal capacitor-like devices, where the dielectric might be a TMO and the electrodes are ordinary metals. The phenomenon occurs in a strikingly large variety of systemsranging from simple binary compounds, such as NiO, TiO 2 , ZnO, Ta 2 O 5 , HfO 2 , and CuO, to more complex perovskite structures, such as superconducting cuprates and colossal magnetoresistive manganites [2,4,6,9,13].From a conceptual point of view, the main challenges for a nonvolatile memory are as follows: (i) to change its resistance within nano seconds (required for modern electronics applications), (ii) to be able to retain the state for years (i.e., n...

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“…[13][14][15][16] Also, metal electrodes have been used to control resistive switching in mixed valent manganites. 17,18 Multilayered structures consisting of more than one manganite have been reported for various potential applications. [19][20][21] Jo et al 19 have demonstrated the tunneling magnetoresistance (TMR) effect across the La 0.7 Ca 0.3 MnO 3 /La 0.45 Ca 0.55 MnO 3 / La 0.7 Ca 0.3 MnO 3 manganite based trilayered magnetic tunnel junctions.…”

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confidence: 99%

Transport properties and electroresistance of a manganite based heterostructure: role of the manganite–manganite interface

Gadani

Dhruv

Joshi

et al. 2016

Phys. Chem. Chem. Phys.

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In this paper, we report the results of the investigations on the transport properties performed across the manganite-manganite interface in the LaMnO3-δ/La0.7Ca0.3MnO3/LaAlO3 (LMO/LCMO/LAO) heterostructure. The bilayered heterostructure was synthesized by a low cost and simple chemical solution deposition (CSD) method by employing the acetate precursor route. The same LMO/LCMO/LAO heterostructure was also grown using the dry metal oxide chemical vapor deposition (CVD) method and the results of transport characterization have been compared on the basis of wet and dry chemical methods used. XRD Φ-scan measurements were carried out to verify the structural quality and crystallographic orientations of LMO and LCMO manganite layers, for both wet and dry chemical method grown heterostructures. For wet and dry chemical methods, the temperature dependent resistance of the LMO/LCMO interface suggests the metallic nature. The asymmetric I-V curves collected at different temperatures show normal diode characteristics which get transformed to backward diode characteristics at high temperatures under high applied voltages at Vtr for both the methods. The values of Vtr are strongly dependent on the chemical method used. I-V data have been fitted using the Simmons model at different temperatures and discussed in terms of the spin-flip scattering mechanism for both wet and dry chemical method grown heterostructures. The electric field dependent electroresistance (ER) behavior of the presently studied LMO/LCMO manganite-manganite interface, grown using wet and dry chemical methods, has been understood on the basis of complex mechanisms including charge injection, formation of the depletion region, the tunneling effect, thermal processes and junction breakdown and their dependence on the applied electric field, field polarity and temperature studied.

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Interplay of cross-plane polaronic transport and resistive switching in Pt–Pr_0.67Ca_0.33MnO₃–Pt heterostructures

Cited by 21 publications

References 26 publications

Real-time decay of a highly excited charge carrier in the one-dimensional Holstein model

Real-time decay of a highly excited charge carrier in the one-dimensional Holstein model

Shock Waves and Commutation Speed of Memristors

Transport properties and electroresistance of a manganite based heterostructure: role of the manganite–manganite interface

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