Interplay of Ga vacancies, C impurities, and yellow luminescence in GaN

Reurings, Floris; Tuomisto, Filip

doi:10.1117/12.698980

Cited by 13 publications

(14 citation statements)

References 31 publications

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“…However, the YL band in this paper was measured from the GaN/sapphire interface, where the concentration of various defects (other than V Ga ) is very high and may not be the same across the different samples. In another paper [17], the anticorrelation between the YL intensity and the concentration of the V Ga -containing defects was observed for three high-resistivity GaN samples. Xu et al [55] noticed that in GaN samples with undetectable amount of Ga vacancies, the YL intensity was significantly higher than that in GaN samples containing V Ga with the concentration of ∼10 17 cm −3 .…”

Section: Comparison Of Theory and Experimentsmentioning

confidence: 89%

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Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

et al. 2014

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In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow luminescence (YL) band gives way to a green luminescence (GL) band at high excitation intensity. We propose that the GL band with a maximum at 2.4 eV is caused by transitions of electrons from the conduction band to the 0/+ level of the isolated C N defect. The YL band, related to transitions via the −/0 level of the same defect, has a maximum at 2.1 eV and can be observed only for some high-purity samples. However, in less pure GaN samples, where no GL band is observed, another YL band with a maximum at 2.2 eV dominates the photoluminescence spectrum. The latter is attributed to the C N O N complex.

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Section: Comparison Of Theory and Experimentsmentioning

confidence: 89%

“…The HVPE samples were compared to GaN samples grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates, in which no traces of the GL band could be found (samples EM1256, EM6881, EM7169, and EM7049) [16,17].…”

Section: A Experimental Detailsmentioning

confidence: 99%

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

et al. 2014

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“…However, the YL band in this work was measured from the GaN/sapphire interface where the concentration of various defects is very high and may not be reproducible. Reurings and Tuomisto (2007) observed an opposite relation between the YL intensity and the concentration of the V Ga -containing defects in C-doped GaN samples (Fig. 15).…”

Section: Vacancy-related Defects Revealed By Pasmentioning

confidence: 65%

“…This coefficient was assumed to be 1 Â 10 15 s À1 in early works (Oila et al, 2001;Saarinen et al, 1997) and adjusted to 3 Â 10 15 s À1 in later works (Reurings and Tuomisto, 2007;Saarinen et al, 2001a). The detection limit for the V Gacontaining defects in GaN can be as low as 1 Â 10 15 cm À3 .…”

Section: Vacancy-related Defects Revealed By Pasmentioning

confidence: 99%

“…The positron lifetime in the defect-free GaN lattice (τ b ¼ 160 AE 1ps) and the lifetime of positrons trapped at negatively charged V Ga or V Ga -containing complexes (τ V ¼ 235 AE 5ps) have been determined using GaN samples with negligible and high concentrations of the V Ga -containing defects, respectively. Then, the concentration of the V Ga -containing defects, c V , can be found as Oila et al (2001), Reurings and Tuomisto (2007), and Saarinen et al, (1997Saarinen et al, ( , 1998 …”

Section: Vacancy-related Defects Revealed By Pasmentioning

confidence: 99%

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Point Defects in GaN

Reshchikov

2015

Semiconductors and Semimetals

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On the Origin of the Yellow Luminescence Band in GaN

Reshchikov

2022

Physica Status Solidi (b)

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The yellow luminescence (YL) band with a maximum at 2.2 eV is the dominant defect‐related luminescence in unintentionally doped GaN. The discovery of the mechanism responsible for this luminescence band and related defects in GaN took many years. Eventually, a consensus has been reached that the CN acceptor is the source of the YL band (the YL1 band) in GaN samples grown by several techniques. Previously suggested candidates, such as VGa, VGaON, CNON, and CNSiGa, should be discarded. At the same time, other defects (such as the VN, BeGa, and CaGa) may cause luminescence bands with positions and shapes not much different from the YL1 band. In GaN containing high concentrations of gallium vacancies, oxygen, and hydrogen, complexes containing these species may also contribute in the red–yellow part of the photoluminescence spectrum. The main controversies related to the YL band are resolved.

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Interplay of Ga vacancies, C impurities, and yellow luminescence in GaN

Cited by 13 publications

References 31 publications

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

Point Defects in GaN

On the Origin of the Yellow Luminescence Band in GaN

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