Interplay of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>h</mml:mi><mml:mo>∕</mml:mo><mml:mi>e</mml:mi></mml:mrow></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>h</mml:mi><mml:mo>∕</mml:mo><mml:mn>2</mml:mn><mml:mi>e</mml:mi></mml:mrow></mml:math>oscillations in gate-controlled Aharonov-Bohm rings

Shelykh, I. A.; Bagraev, N. T.; Галкин, Н. Г.; Klyachkin, L. E.

doi:10.1103/physrevb.71.113311

Cited by 38 publications

(45 citation statements)

References 30 publications

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“…Therefore we used the scattering matrix approach to model theoretically the experimental results [17]. In frameworks of ballistic regime, the spin-dependent conductance of the three-terminal device (figure 1b) was calculated as…”

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confidence: 99%

Spin interference in silicon one-dimensional rings

Bagraev

Галкин

Gehlhoff

et al. 2007

J. Phys.: Conf. Ser.

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Abstract. We present the first findings of the spin transistor effect in the Rashba gatecontrolled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity of the spindependent transport of holes are studied by varying the value of the external magnetic field and the bias voltage that are applied perpendicularly to the plane of the double-slit ring. Firstly, the amplitude and phase sensitivity of the 0.7·(2e 2 /h) feature of the hole quantum conductance staircase revealed by the quantum point contact inserted in the one of the arms of the double-slit ring are found to result from the interplay of the spontaneous spin polarization and the Rashba spin-orbit interaction. Secondly, the quantum scatterers connected to two one-dimensional leads and the quantum point contact inserted are shown to define the amplitude and the phase of the Aharonov-Bohm and the Aharonov-Casher conductance oscillations.The spin-correlated transport in low-dimensional systems was in focus of both theoretical and experimental activity in the last decade [1,2]. The studies of the Rashba spin-orbit interaction (SOI) that results from the structure inversion asymmetry in mesoscopic nanostructures have specifically attracted much of the efforts [1,3,4]. The variations in the Rashba SOI value appeared to give rise to the developments of spintronic devices based on the spin-interference phenomena that are able to demonstrate the characteristics of the spin field-effect transistor (FET) even without ferromagnetic electrodes and external magnetic field [4,5]. For instance, the spin-interference device shown schematically in figure 1a represents the Aharonov-Bohm (AB) ring covered by the top gate electrode, which in addition to the geometrical Berry phase provides the phase shift between the transmission amplitudes for the particles moving in the clockwise and anticlockwise direction [4]. This transmission phase shift (TPS) seems to be revealed by the Aharonov-Casher oscillations of the conductance measured under the top gate voltage applied to the two-terminal device, with the only drain and source constrictions [5]. However, the variations in the density of carriers that accompany the application of the top gate voltage are also able to result in the conductance oscillations. Therefore the three-terminal device with the quantum dot (QD) [6] or the quantum point contact (QPC) [7] inserted in one of the ring's arms using the split-gate technique [8] could be more appropriate to divide the relative contribution of the Aharonov-Casher (AC) effect in the conductance oscillations (see figure 1a).Since the AB ring's conductance has to be oscillated with the periodicity of a flux quantum h/e when a variable magnetic field threads its inner core, these AB oscillations have been shown to be persisted, if the transport through the QD [6] or QPC [7] inserted is coherent. The TPS caused by the QD or QPC has been found to be equal to π in the absence of the spin polarisa...

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confidence: 99%

Spin interference in silicon one-dimensional rings

Bagraev

Галкин

Gehlhoff

et al. 2007

J. Phys.: Conf. Ser.

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“…Second, it induces the Rashba SOI and creates the dynamical phaseshift between the waves propagating within the ring. It consists of Aharonov -Casher (AC) phaseshift, arising from different values of the wavenumbers for the waves propagating in opposite directions [3,7], and a Berry (geometric) phase term [2], accumulated during the adiabatic evolution of the electron's spin in the inhomogeneous effective magnetic field created by Rashba SOI and external magnetic field perpendicular to the structure's interface. As a result, the conductance of the mesoscopic ring exhibits oscillations [8] as a function of the perpendicular electric field.…”

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confidence: 99%

Proposal for a Mesoscopic Optical Berry-Phase Interferometer

et al. 2009

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We propose a novel spin-optronic device based on the interference of polaritonic waves traveling in opposite directions and gaining topological Berry phase. It is governed by the ratio of the TE-TM and Zeeman splittings, which can be used to control the output intensity. Due to the peculiar orientation of the TE-TM effective magnetic field for polaritons, there is no analogue of the Aharonov-Casher phaseshift existing for electrons.PACS numbers: 71.36.+c,71.35.Lk,03.75.Mn The problem of the spin dynamics is one of the most interesting in mesoscopic physics. The investigations in this field are stimulated by the possibility of creation of nanodevices, where the spins of the single particles could be precisely manipulated and controlled. The first device of this type, namely spin transistor, was proposed in early 90's in the pioneer work of Datta and Das [1], who used an analogy between the precession of the electron spin provided by Rashba spin-orbit interaction (SOI) and the rotation of the polarization plane of light in optically anisotropic media.However, the experimental realization of the spin transistor proposed by Datta and Das turned out to be quite complicated, due to the extremely low efficiency of spin injection from ferromagnetic to semiconductor materials. It was then proposed to use mesoscopic gated AharonovBohm (AB) rings as a possible basis of various spintronic devices such as spin transistors [2,3], spin filters [4,5,6], and quantum splitters [6]. The conductance of such structures depends both on the magnetic and the electric fields applied perpendicular to the interface of the structure. The magnetic field provides the AB phaseshift between the waves propagating in the clockwise and anticlockwise directions thus resulting in the oscillations of the conductance.The electric field applied perpendicular to the plane of the ring also affects the conductance. It has a two-fold effect. First, it changes the carrier wavenumber thus leading to conductance oscillations analogical to those observed in the Fabry-Perot resonator. Second, it induces the Rashba SOI and creates the dynamical phaseshift between the waves propagating within the ring. It consists of Aharonov -Casher (AC) phaseshift, arising from different values of the wavenumbers for the waves propagating in opposite directions [3,7], and a Berry (geometric) phase term [2], accumulated during the adiabatic evolution of the electron's spin in the inhomogeneous effective magnetic field created by Rashba SOI and external magnetic field perpendicular to the structure's interface. As a result, the conductance of the mesoscopic ring exhibits oscillations [8] as a function of the perpendicular electric field.It was recently proposed that in the domain of mesoscopic optics the controllable manipulation of the spin of excitons and exciton-polaritons can provide a basis for the construction of optoelectronic devices of the new generation, called spin-optronic devices [9]. The first element of this type, polarization-controlled optical gate, was recen...

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“…1). Within the scattering matrix approach 17,26 , the amplitudes of electron waves in the chain, A ± , B ± , C ± , D ± , satisfy two equations, …”

Section: Modelmentioning

confidence: 99%

Optically controlled periodical chain of quantum rings

2016

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We demonstrated theoretically that a circularly polarized electromagnetic field substantially modifies electronic properties of a periodical chain of quantum rings. Particularly, the field opens band gaps in the electron energy spectrum of the chain, generates edge electron currents and induces the Fano-like features in the electron transport through the finite chain. These effects create physical prerequisites for the development of optically controlled nanodevices based on a set of coupled quantum rings.

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Interplay ofh∕eandh∕2eoscillations in gate-controlled Aharonov-Bohm rings

Cited by 38 publications

References 30 publications

Spin interference in silicon one-dimensional rings

Spin interference in silicon one-dimensional rings

Proposal for a Mesoscopic Optical Berry-Phase Interferometer

Optically controlled periodical chain of quantum rings

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