Interplay of Precursor and Plasma for The Deposition of HfO2 via PEALD: Film Growth and Dielectric Properties
Florian Preischel,
David Zanders,
Thomas Berning
et al.
Abstract:HfO2 thin films are appealing for microelectronic applications such as high‐κ dielectric layers, memristors, and ferroelectric memory devices. To fulfill the different requirements of each application, the properties of the deposited material need to be tuned accordingly. In this context, plasma‐enhanced atomic layer deposition (PEALD) is a powerful processing route to tailor the properties of HfO2 thin films, especially at low temperatures. Herein, a comprehensive bottom‐up approach is presented, ranging from… Show more
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