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Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible energy consumption. The dynamics of the Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified as a rich and reliable source of such functional complexity. However, its full potential in high-speed and lowpower operation has been largely unexplored. We fabricated nanoscale VO 2 devices embedded in a broadband test circuit to study the speed and energy limitations of their resistive switching operation. Our picosecond time-resolution, real-time resistive switching experiments and numerical simulations demonstrate that tunable low-resistance states can be set by the application of 20 ps long, <1.7 V amplitude voltage pulses at 15 ps incubation times and switching energies starting from a few femtojoule. Moreover, we demonstrate that at nanometer-scale device sizes not only the electric field induced insulator-to-metal transition but also the thermal conduction limited metal-to-insulator transition can take place at time scales of 100s of picoseconds. These orders of magnitude breakthroughs can be utilized to design high-speed and low-power dynamical circuits for a plethora of neuromorphic computing applications from pattern recognition to numerical optimization.
Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible energy consumption. The dynamics of the Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified as a rich and reliable source of such functional complexity. However, its full potential in high-speed and lowpower operation has been largely unexplored. We fabricated nanoscale VO 2 devices embedded in a broadband test circuit to study the speed and energy limitations of their resistive switching operation. Our picosecond time-resolution, real-time resistive switching experiments and numerical simulations demonstrate that tunable low-resistance states can be set by the application of 20 ps long, <1.7 V amplitude voltage pulses at 15 ps incubation times and switching energies starting from a few femtojoule. Moreover, we demonstrate that at nanometer-scale device sizes not only the electric field induced insulator-to-metal transition but also the thermal conduction limited metal-to-insulator transition can take place at time scales of 100s of picoseconds. These orders of magnitude breakthroughs can be utilized to design high-speed and low-power dynamical circuits for a plethora of neuromorphic computing applications from pattern recognition to numerical optimization.
VO2 stands out as a unique material manifesting intrinsically coupled electronic and phase transitions. The novel electric field–activated phase transition behaviours, along with the high-resistance change rate, ultrarapid response, and...
Összefoglalás. Napjainkra az információs technológiák fejlődése elérte azt a szintet, ahol a gyorsuló ütemben létrejövő adattömeg feldolgozásához már sok esetben elégtelenek a klasszikus, Neumann-elvek alapján működő számítógépek. A jelenség újszerű szoftveres megoldások, biológiai ihletésű algoritmusok, neurális hálózatok elterjedéséhez vezetett, ám ezek hatékony alkalmazásához teljesen új hardveres megoldások szükségesek. Jelen kézirat ilyen újszerű architektúrákhoz fejlesztett, Si-mikrochip-alapú memóriatulajdonsággal rendelkező nanoméretű áramköri elemek kísérleti eredményeit mutatja be, illetve azok egy-egy specifikus információfeldolgozási feladatra történő alkalmazhatóságával foglalkozik. Summary. Resistive switching memory devices, also known as memristors, are generally metal-insulator-metal nanostructures whose conductivity can be varied via electrical signals, enabling information storage in the value of the conductivity. Based on this property, memristive devices provide a promising platform for hardware-level encoding of large matrices. With a network of memristors, computationally intensive vector-matrix operations can be performed in a single step, considerably speeding up the operation of an artificial neural network (ANN). Memristors can also serve as real physical building blocks for biologically inspired algorithms through their neuromorphic properties. Via building simple circuits, such devices can be used to create oscillators or artificial neurons, which can be utilized for the implementation of oscillatory neural networks (ONN) or spiking neural networks (SNN). Another interesting feature of these memristive neuromorphic circuits is that they can be directly used for information processing tasks at the edge of a network. Memristors facilitate such edge computing applications which usually require energy-efficient operation and small size of the processor unit. Edge computing approaches have several advantages over centralized data processing from the aspect of security, e.g., significantly reducing time latency of sending large amounts of data to a central hub, and by processing sensitive data locally and independently of the central servers. Present work focuses on the experimental investigation of purpose-built nanoscale memristive devices, revealing their physical processes. A superconducting spectroscopy measurement technique is developed for the non-destructive detection of atomic scale memristive filaments during device operation (Török et al. 2020; Török et al. 2023). In addition, the tunable stochasticity of the nucleation process is revealed by statistical studies of the set process in silicon oxide memristors (Török et al. 2022). This finding provides a basis for the physical realization of neural activation functions, stochastically firing neurons or energy-efficient true random number generation. Finally, the applicability of the investigated nanoscale memristive devices is illustrated through two examples. The concept of a neuromorphic, memristor-based auditory sensing unit is presented, leading towards medical application in a fully implantable cochlear implant. Last, the feasibility of a hardware-level stochastic optimization procedure is introduced (Fehérvári et al. 2023), based entirely on memristive elements, utilizing tunable noise characteristics of the devices (Sánta et al. 2021).
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