Interpretation of acceptor spectra in semiconductors

Lipari, N. O.; Baldereschi, A.

doi:10.1016/0038-1098(78)90785-8

Cited by 137 publications

(43 citation statements)

References 11 publications

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“…A unique feature of the foregoing discussion is the assignment of the first excited state manifold of the exciton to an electron-hole pair involving a r7 hole. There is considerable theoretical support for the existence of a low-lying r: state for effective mass acceptors in silicon (Lipari and Baldereschi 1978). Raman scattering studies in boron-doped silicon by Wright and Mooradian (1967) and Cherlow et a1 (1973) and infrared absorption studies by Chandrasekhar etal (1973) provide experimental evidence for the existence of this state.…”

Section: Discussionmentioning

confidence: 96%

Uniaxial stress studies of the Be pair bound exciton absorption spectrum in silicon

Henry¹,

Moloney²,

Treacy³

et al. 1984

J. Phys. C: Solid State Phys.

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Section: Discussionmentioning

confidence: 96%

Uniaxial stress studies of the Be pair bound exciton absorption spectrum in silicon

Henry¹,

Moloney²,

Treacy³

et al. 1984

J. Phys. C: Solid State Phys.

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“…Applying this classification scheme, all observed transitions originate from the P + acceptor ground state. The G-, D-and Blines were attributed to r s end states, whereas the C-line is due to two excited states, F s and P~-, being energetically very close [10]. The A-and/-lines are actually groups of 4 and 8 lines at B = 0 T, respectively.…”

Section: Resultsmentioning

confidence: 92%

“…The local symmetry of an acceptor on a Ge lattice site corresponds to the point group Td. In the effective mass approximation however, the small terms in the impurity potential being non-symmetric against inversion are neglected and the acceptor states are characterised by double group representation of the octahedral groups Oh, having definite parity [10]. Applying this classification scheme, all observed transitions originate from the P + acceptor ground state.…”

Section: Resultsmentioning

confidence: 99%

“…[4] no splitting of the C~ peak should occur. However, after calculations of Lipari and Baldereschi [10] there exists a r~-state energetically almost coinciding with the 1~ -end state of the C-line. This I~ -state has been reported by Gershenzon [11], but it could never be detected by PTIS-measurements, although the resolution in these experiments has been sufficiently large (see references in [12]).…”

Section: Magnetic Field (T)mentioning

confidence: 92%

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Zeeman splitting of excited boron states in p-Ge

Jungwirt

Prettl

1989

Int J Infrared Milli Waves

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The photothermal spectrum of shallow acceptors in p-Ge has been investigated at various magnetic field strengths up to 5.6 T at a temperature of 7.5 K by FIR-Fourier-spectroscopy. From the observed Zeeman splittings of the excited states of the boron acceptor the coefficients of the linear and quadratic field dependence have been evaluated and g-factors of the D-, C-and the G-transitions have been determined based on a standard group theoretical approach.

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“…1 (a) in a frequency range between 45 and 200 cm -1. The observed lines are due to photothermal ionization caused by transitions from the 1Sa/~ (F +) acceptor 18 ground state to excited states below the valence band edge [9]. The labelling of the lines in Fig.…”

Section: [8]mentioning

confidence: 97%

Magnetic field dependence of quasi-bound Coulomb states of light holes in germanium

Jungwirt¹,

Kropf²,

Roessler³

et al. 1989

Solid State Communications

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The photothermal spectra of the shallow acceptor boron in high purity p-Ge has been investigated for various magnetic field strengths at low temperatures. A large number of lines observed at frequencies above the binding energy of boron are attributed to optical excitation of quasi-bound Coulomb states, which arise in a magnetic field below each Landau level. By comparison with calculated Landau level energies the final states of the observed transitions can be unambigously identified.Shallow impurities in semiconductors represent hydrogen-like systems for which the high magnetic field case can be exprimentally realized by standard laboratory magnets due to the large effective Bohr radius. Therefore the optical excitation spectra of shallow impurities in a uniform magnetic field have been extensively studied by far-infrared (FIR) photothermal ionization and photoionization spectroscopy [1]. The hydrogen atom in a magnetic field is a fundamental problem of quantum theory, which cannot be solved in closed form because of different symmetries of the Coulomb potential and the uniform magnetic field. The energy spectrum of this system consists besides of continuum states, corresponding to Landau levels with quantum number n, of bound (stable) or quasi-bound (metastable) Coulomb states depending on their angular momentum quantum number m [2,3]. Due to the relation m < n, the Coulomb states connected with the higher Landau levels n > 1 and m < n -1 are degenerate with the continuum of lower Landau levels with the same m quantum number, to which they are coupled by the Coulomb potential. Thus autoionization transitions may occur and, therefore, these states are called quasi-bound or metastable. In contrast, the Coulomb states connected with the lowest Landau level n = 0 and m < 0 and those with n = m, which are not degenerate with a continuum, are bound or stable.In a previous investigation of shallow donors in nGaAs several structures in FIR photoconductivity spectra could be attributed to optical transitions from the donor ground state to those metastable states [4]. The identification of the final states was based on the fact that pairs of states with m = 4-1 separated by the cyclotron resonance energy hwc are optically accessible in Faraday configuration from the donor ground state using unpolarized light. In the fourfold degenerate valence band of tetrahedrally coordinated semiconductors the situation is more complex because the Landau levels are irregularly spaced [5]. Zverev et al. analyzed p-Ge in detail by investigating magneto-photoconductivity upon monochromatic irradiation [6] and optical phonon emission induced resonant recombination of holes excited by broad band infrared illumination [7]. For each degenerate Landau level they observed a single resonance attributed to quasi-bound acceptor states.In the present paper we report on FIR photoconductivity measurements on boron doped p-Ge carried out by Fourier-spectroscopy. In high purity samples a whole series of spectral lines has been observed and identified...

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Interpretation of acceptor spectra in semiconductors

Cited by 137 publications

References 11 publications

Uniaxial stress studies of the Be pair bound exciton absorption spectrum in silicon

Uniaxial stress studies of the Be pair bound exciton absorption spectrum in silicon

Zeeman splitting of excited boron states in p-Ge

Magnetic field dependence of quasi-bound Coulomb states of light holes in germanium

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