Interpretation of laser absorption measurements on 4H-SiC bipolar diodes by numerical simulation

Werber, D.; Wachutka, G.

doi:10.1109/sispad.2008.4648244

Cited by 6 publications

(6 citation statements)

References 4 publications

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“…The optical properties of semiconductor devices are temperature dependent. Thus many optical temperature indicators can be found, such as luminescence, Raman effect, refraction index [2], reflectance [3] or laser deflection [4][5][6]. The authors of power electronics studies often use the variation of infrared (IR) radiation with temperature: local infrared sensors [7][8][9][10][11], optical fibers [12][13], infrared microscope [14][15] and infrared camera [7,[19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

“…The infrared microscope [14] and the 2D radiometry [8,9] also allow for thermal mapping of the semiconductor device. In addition, the laser deflection technique [4][5][6] can be used to measure the temperature gradients directly inside the power semi-conductor. This possibility can be very interesting in order to validate electro-thermal models.…”

Section: Introductionmentioning

confidence: 99%

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Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

Avenas

Dupont²,

Khatir³

2012

IEEE Trans. Power Electron.

454

202

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This paper proposes a synthesis of different electrical methods used to estimate the temperature of power semiconductor devices. The following measurement methods are introduced: the voltage under low current levels, the threshold voltage, the voltage under high current levels, the gate-emitter voltage, the saturation current and the switching times. All these methods are then compared in terms of sensitivity, linearity, accuracy, genericity, calibration needs and possibility of characterizing the thermal impedance or the temperature during the operation of the converter. The measurement of thermo-sensitive parameters of wide band gap semi conductors is also discussed.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

Avenas

Dupont²,

Khatir³

2012

IEEE Trans. Power Electron.

454

202

View full text Add to dashboard Cite

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“…There are various techniques for thermal mapping based on the use of an IR sensor [36][37][38][39][40], IR microscope [41], 2D radiometry [41,42], and the laser deflection technique [43][44][45], while fiber optic [46][47][48] and the IR camera [49][50][51][52][53][54] can both be used to obtain a thermal mapping or the JT value. In the following, the aforementioned optical techniques are briefly discussed.…”

Section: Optical Methodsmentioning

confidence: 99%

“…The use of optical fiber as a CM method for the power modules has been discussed in very few works [46][47][48]. It is worth underlining that this CM method can be used without removing the dielectric gel on the power module surface, and the JT can be measured by placing the fiber optic cable in direct contact with the power chip.…”

Section: Optical Fibersmentioning

confidence: 99%

Two Decades of Condition Monitoring Methods for Power Devices

2021

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Condition monitoring (CM) of power semiconductor devices enhances converter reliability and customer service. Many studies have investigated the semiconductor devices failure modes, the sensor technologies, and the signal processing techniques to optimize the CM. Furthermore, the improvement of power devices’ CM thanks to the use of the Internet of Things and artificial intelligence technologies is rising in smart grids, transportation electrification, and so on. These technologies will be widespread in the future, where more and more smart techniques and smart sensors will enable a better estimation of the state of the health (SOH) of the devices. Considering the increasing use of power converters, CM is essential as the analysis of the data obtained from multiple sensors enables the prediction of the SOH, which, in turn, enables to properly schedule the maintenance, i.e., accounting for the trade-off between the maintenance cost and the cost and issues due to the device failure. From this perspective, this review paper summarizes past developments and recent advances of the various methods with the aim of describing the current state-of-the-art in CM research.

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“…The methods can be divided into three main categories which are electrical, optical and physically contacting. Optical methods such as measurement by thermal camera involve the measurement of temperature-dependent optical parameters like infra-red radiation [123,124,125], luminescence and laser deflection [126,127,128]. Physically contacting methods involve direct contact of the measurement instrument with the semiconductor die.…”

Section: : Opposition Setup For Characterising Switching Losses Of Half-bridgementioning

confidence: 99%

Modelling of gallium nitride half-bridge converter

Yeo¹

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First and foremost, I'd like to thank God for guiding me through this difficult period of my life and for sending me the right people at the right time. This study would not have been possible if it were not for the guidance and support of people from both Robert Bosch Southeast Asia Private Limited and Nanyang Technological University. On Bosch's side, I'd like to thank the power electronics team and my other colleagues at Robert Bosch, in particular, Dr Pham, who has provided the necessary guidance to hone my programming skills and improve my publication quality. Special thanks also goes out to the other members of Bosch's power electronics team -Jan Riedal, Jitendra Solanki, Nima Saadat, He Maojun and Zaki Mohzani for providing me technical guidance and moral support throughout this study. I'd also like to thank Konstantin Spanos from Robert Bosch's Stuttgart-based power electronics department for introducing me to the basics of device characterisation and for advising on the printed circuit board layouts of both my prototype converters and my switch characterisation equipment. On the University's side, I'd like to thank Professor Tseng King Jet, who has provided insight and advice on device physics as well as which direction to steer my research. I wish him well in his new endeavour at the Singapore Institute of Technology. I'd like to also thank Jennifer from the Electric Power Research Lab for supporting me on administrative issues. Finally, I'd like to thank Professor Ali Maswood, who agreed to take me on after Professor Tseng left to see my study to completion. ContentsAcknowledgements.

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Interpretation of laser absorption measurements on 4H-SiC bipolar diodes by numerical simulation

Cited by 6 publications

References 4 publications

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

Two Decades of Condition Monitoring Methods for Power Devices

Modelling of gallium nitride half-bridge converter

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