Interspheral Space and Properties of Mono- and Divalent Metals with FCC and BCC Structures

Iskakova, Kulpash; Akhmaltdinov, Rif; Aliyev, Bakhodir

doi:10.1166/jctn.2018.7245

Cited by 3 publications

(1 citation statement)

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“…All of them have filled cell structures, which we reported for III-V nanoparticles [5][6][7][8]. The obtained values of the discontinuities in the uniform increase and amplitude of the electronic densities ρ (Cu 2 O) n [9,10] in comparison with Ga m As n show that the interspaces are features of the material, and the nature of such bonds plays an important role. Therefore, nanoparticles of Ga m As n while increasing in size produce three-dimensional structures faster in comparison with the structure (Cu 2 O) n [11].…”

Section: Methodssupporting

confidence: 58%

Plasma Deposition of Gallium Arsenide Nanoclusters on a Silicon Matrix

Iskakova

2022

Journal of Nanomaterials

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In the plasma state, a polar semiconductor gallium arsenide (GaAs) is deposited on a nonpolar silicon (Si) matrix in the <111> direction. Further qualitative and quantitative analyzes were carried out with the resulting GaAs/Si structure on a plasma-beam device. We have chosen the optimal characteristics of this pulsed method for the deposition of GaAs from a plasma onto silicon (Si) created by a powerful ion beam. The optimal modes of the effect of temperature, electric field, and interval of pulse action on GaAs/Si quantum-well heteronanostructures were considered. In the implementation of application of this structure in applied works related to opto- and nanoelectronics, active elements of solar cells require defect-free compositions with ideal geometric parameters. Based on these experiments, the optimal mode of plasma influence on the formation of nanoclusters on the surface of the irradiated sample was chosen. SEM, EDS, and X-ray diffraction analysis methods were used to determine such parameters as the structure, microhardness, phase and elemental composition of the irradiated Si silicon surface, as well as the penetration depth of GaAs deposited on a single-crystal matrix. This work presents an experimental implementation of preparation of a gallium arsenide nanolayer and an applied theoretical analysis of the GaAs/Si heteronanostructure. We deposited gallium arsenide compounds from the plasma state on the surface of a silica crystal and studied the resulting structure by physicochemical methods.

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Section: Methodssupporting

confidence: 58%

Plasma Deposition of Gallium Arsenide Nanoclusters on a Silicon Matrix

Iskakova

2022

Journal of Nanomaterials

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Nickel oxide nanoparticles on the surface of the gallium arsenide nanocluster structure

Iskakova

AkhmaltdinovRif

2019

Nanomaterials and Energy

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This paper describes how the efficiency of the active element of a solar cell of gallium arsenide (GaAs) is increased by nickel oxide nanoparticles. The simulated structure of a semiconductor GaAs compound with a diamond-like lattice shows how the intersphere space grid is generated based on the face-centered cubic lattice motif. A theoretically determined optimal concentration of nanoparticles on the surface and the corresponding values of the experimental data are shown. Studies of the electronic structure on small GaAs clusters at n = 18 correspond to a minimum value of –19·238 eV and a maximum value of –5·606 eV for the state n = 0, –2·99 eV and 20·232 eV for the state n = 1, –0·693 eV and –0·03 eV for the state n = 2, –0·16 eV and –2·646 × 10–4 eV for the state n = 3, respectively. Peaks in the spectra sequentially observed within these limits coincide with the maximum value of the wave vector. Spectral variations, depending on the size of the interspheric space and the number of ion cores, correlate well with changes in densities. The electron density structure of GaAs has a complex structure. The maximum probability of finding is concentrated near four Ga ions. When approaching the center, the electron density changes in a wave-like fashion with a small maximum in the center. The results of the calculations show that gallium atoms in clusters with a higher binding energy, as a rule, are located on the surface or in the places of atomic edges, since the atoms of the faces are less consistent. Arsenic atoms are located in the center, surrounded by gallium atoms.

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