Interstitial condensation in n+ GaAs

Hutchinson, P. W.; Dobson, P. S.

doi:10.1007/bf01031865

Cited by 34 publications

(7 citation statements)

References 6 publications

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“…Another possible mechanism for forming carbon interstitials through the agency of nitrogen impurity could be analogous to the chemico-electronic one proposed by Hurle (1979) for the formation of gallium interstitials in gallium arsenide doped with tellurium. Interstitial dislocation loops have been observed in this material after it has been heat-treated for 10 h at a temperature of 900 °C (Hutchinson & Dobson 1974) and while there was a suggestion that they might have arisen from quenched-in interstitials (Hutchinson & Dobson 1975), they are now thought to be due to impurities such as Te or Zn producing interstitials (Ball et al 1981). As far as is known to the author, all the observations of interstitial aggregates forming in materials of a single atomic species have involved the action of irradiation to produce the self-interstitials.…”

Section: Plateletsmentioning

confidence: 83%

The structure and mechanism of formation of platelets in natural type Ia diamond

Humble

1982

Proc. R. Soc. Lond. A

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Observations have been made on medium- and large-sized platelets in a natural type Ia diamond. Attempts have been made to detect any regularity in the structure of the platelets by means of electron diffraction, but none was found. The displacement associated with the platelets has been determined to be extrinsic, normal to the plane of the platelet and of magnitude 0.4 ‹010›. This value has led to the proposal of a model for the platelet structure in which the platelet consists of an interstitial layer of carbon atoms pentagonally bonded to the surrounding diamond matrix. The way in which the detailed bonding may be varied, while complete tetrahedral bonding is maintained, can lead to irregular structures consistent with the diffraction evidence. Possible mechanisms for producing interstitial carbon atoms are considered and the role of nitrogen in this context and in providing possible nuclei for platelet growth is discussed.

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Section: Plateletsmentioning

confidence: 83%

The structure and mechanism of formation of platelets in natural type Ia diamond

Humble

1982

Proc. R. Soc. Lond. A

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“…The above mentioned phenomena seem to correspond to the behaviour of GaAs doped with Si [28], Se [26,27] and S [29] as well. On the contrary, Zn doping gives neither loops nor stacking faults, even at concentrations above 1019 at.cm-3 [26,27,29].…”

Section: Microstructure Of Annealed Doped Crys-mentioning

confidence: 97%

“…TALS. -After annealing at various temperatures, the defects present in Te doped GaAs single crystals display different behaviours [23,24,26,27], which are schematically represented in figure 4 : (i) below 400 °C and above 1 080 °C, no loop and (ii) annealing at temperatures between 800 °C and 1 000 °C causes the growth of vacancy loops in { 111 } and {110} planes ; their size increases with temperature. Isolated stacking faults are also observed.…”

Section: Microstructure Of Annealed Doped Crys-mentioning

confidence: 99%

Dislocation multiplication in GaAs : inhibition by doping

Djemel¹,

Castaing²,

Burle-Durbec³

et al. 1989

Rev. Phys. Appl. (Paris)

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The crystal quality improvement by electrical or isoelectronic doping of L.E.C. grown GaAs crystals is related to the thermoelastic modelling of stresses during growth. The dislocation structure in as-grown and annealed crystals is deduced, in particular with the help of the results of plastic deformation. The addition of various elements of the columns II-III-IV-V-VI in GaAs is considered and its influence on the establishment of the dislocation substructure is discussed

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“…for the temperature range of concern,it is not unreasonable to find a larger TA is required for extrinsic loops formed of Si interstitials. (47 ) Silicon has a diamond structure with a lattice parameter of 5.43 which is close to that of GaAs and hence layers of Si could be easily accomodated in the GaAs lattice.…”

Section: Discussionmentioning

confidence: 99%