Interstitial iron and thermal defects in silicon

Feichtinger, H.; Gschwandtner, A.; Waltl, J.

doi:10.1002/pssa.2210530169

Cited by 24 publications

(10 citation statements)

References 8 publications

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“…After quenching from 950 • C and aging for several days at room temperature, DLTS shows only one line. From the shift of this line with correlation frequency of the Lock-in measuring system, the emission characteristics, i. e. the hole emission rate of the defect as a function of temperature, have been determined (ionization enthalpy: 0.10 eV, capture cross section: σ = 1.7 × 10 −14 cm 2 ) and found to fit with those measured for iron-boron pairs by Graff and Pieper [7] and Feichtinger [8]. The concentration calculated from the line amplitude is equal to the solubility of iron in silicon at 950 • C. Annealing at 200 • C for 30min, quenching and immediate DLTS-registration results in a spectrum with two lines of comparable amplitudes at the positions expected for (FeB) (0/+) and Fe i (0/+) (compare curve A in Fig.…”

Section: Resultsmentioning

confidence: 88%

Early stages of iron precipitation in silicon

Khalil

Kveder

Schröter

et al. 2005

phys. stat. sol. (c)

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The early stages of iron precipitation in p-type float-zone silicon have been studied by means of Deep Level Transient Spectroscopy, DLTS, for iron concentrations in the range of 10 14 − 3 × 10 15 cm 3 . A DLTS line showing the signatures of extended localized states is observed. The emission characteristics of the associated defect is very similar to that of the interstitial iron donor. It is concluded that large clusters consisting of interstitial iron atoms give rise to the observed DLTS line.

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Section: Resultsmentioning

confidence: 88%

Early stages of iron precipitation in silicon

Khalil

Kveder

Schröter

et al. 2005

phys. stat. sol. (c)

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“…[2][3][4][5] This can be very detrimental to device region of the wafer, as strain fields and process induced defects can localize the Fe impurities in this sensitive area. 6 It is well accepted that iron contamination degrades gate oxide integrity and decreases yield as devices are scaled to sub-micron dimensions.…”

Section: Introductionmentioning

confidence: 99%

Iron precipitation in float zone grown silicon

Henley

Ramappa

1997

Journal of Applied Physics

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Temperature dependent iron precipitation in float zone grown silicon wafers has been experimentally investigated. Results of iron precipitation experiments over a wide thermal process temperature range and time are presented. Precipitation of iron in silicon was analyzed by a quantitative assessment of change in interstitial iron using a surface photovoltage minority carrier lifetime analysis technique. Contamination levels of iron in the range 10 11 -10 13 atoms/cm 3 are investigated. It is concluded that maximum iron precipitation occurs in the temperature range of 500-600°C. Iron precipitation is rapid in this region where more than 90% of the interstitial iron precipitates in a period of 30 min.

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“…Defects corresponding to D1 have often been observed by several investigators (19)(20)(21). Swanson (19) found that an unidentified donor with a level at E~ + 0.4 eV was produced by quenching from 800~176 and was annihilated near 300 K by first-order kinetics with an activation energy of 0.8 eV.…”

Section: Discussionmentioning

confidence: 96%

“…In most cases, these impurities and defects affect the electrical properties of the crystals, and therefore have a significant effect on the performance of electronic devices. Although there have been a large number of experimental investigations (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13) to study the energy levels arising from these impurities and defects and their carrier trapping and emitting properties by means of capacitance transient techniques such as deep-level transient spectroscopy (DLTS) (14), relatively little work has been accomplished so far on the effects of such electrically active centers on the electrical properties of silicon crystals (15)(16)(17)(18)(19)(20)(21). However, the results of such work would indeed be very helpful to design the optimum fabrication process of desirable devices.…”

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confidence: 99%

Effects of Heat‐Treatments on Electrical Properties of Boron‐Doped Silicon Crystals

Kamiura

Hashimoto

Yoneta

1990

J. Electrochem. Soc.

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The effects of heat-treatments around 1000~ and subsequent annealing on the electrical properties of boron-doped silicon have been studied by electrical conductivity, Hall effect, and deep-level transient spectroscopy measurements. The high-temperature heat-treatments always induced net densities of donors. Four recovery stages, stages I-IV, of heat-treatment-induced donors were observed on isochronal annealing up to 400~ Conductivity changes in these stages can be explained as described below by the reactions of interstitial iron (Fei), its pair (FeIB~) with substitutional boron (Bs), and two unknown donors (D~, D2). That is, stage I (25~176 D1-> sink and Fei + Bs-> FeiBs, stage II (100~176 FeiB~-> Fei + Bs, stage III (200~176 D2-~ sink, stage IV (250~176 Fei-~ precipitation. Heat-treatments in an oxygen atmosphere greatly reduced the introduction of Fei and FeiBs in comparison with an argon atmosphere and mainly introduced D~ and D2 donors. The density of D2 was dependent on the heat-treatment temperature, while that of D1 showed almost no dependence. In stage I, D, was annihilated by first-order kinetics with an activation energy of 0.8 eV. It was indicated that DI and D2 have no relations to iron, copper, oxygen, nor carbon. Though their origins are still unidentified, there may be some interstitial impurities. In stage IV, Fe~ is suggested to precipitate at oxygen precipitates and dislocation loops formed by high-temperature heat-treatments. As to the application to iron gettering in the device fabrication process, it is proposed that annealing around 300~ is most suitable as the final heat-treatment step to remove iron and related defects from active regions of devices.

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Interstitial iron and thermal defects in silicon

Cited by 24 publications

References 8 publications

Early stages of iron precipitation in silicon

Early stages of iron precipitation in silicon

Iron precipitation in float zone grown silicon

Effects of Heat‐Treatments on Electrical Properties of Boron‐Doped Silicon Crystals

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