2019
DOI: 10.1016/j.commatsci.2019.03.029
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Interstitial triggered grain boundary embrittlement of Al–X (X = H, N and O)

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Cited by 10 publications
(16 citation statements)
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“…It is recommended that correlations between structural defects and local phase transformations should be considered [56,57,58,59], especially when designing novel advanced materials via the Grain-boundary Engineering or Interface Engineering approach. For instance, in the view of bonding charge density, the local phase transformation of several kinds of planar faults has been captured/reported, such as the connections between stacking faults (growth fault-I1, deformation fault-I2, and extrinsic fault-EF) and long periodic stacking ordered structures/phases (LPSOs) of Mg alloys [56], the local FCC-HCP transformation in the grain boundary of Fe and Al alloys [60,61], the local D0 23 and D0 22 phase transformations in superlattice intrinsic stacking fault (SISF), and antiphase boundaries (APBs) of superalloys [57,62]. Moreover, with the guidance of the electron redistributions in terms of bonding charge density [56,65,66,67] and electron localization functions [68,69], new insights are provided into those microstates/SROs/clusters and structural phase transformations quantitatively and qualitatively.…”
Section: Electrons To Phases and Properties: Key Roles Of Microstatesmentioning
confidence: 99%
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“…It is recommended that correlations between structural defects and local phase transformations should be considered [56,57,58,59], especially when designing novel advanced materials via the Grain-boundary Engineering or Interface Engineering approach. For instance, in the view of bonding charge density, the local phase transformation of several kinds of planar faults has been captured/reported, such as the connections between stacking faults (growth fault-I1, deformation fault-I2, and extrinsic fault-EF) and long periodic stacking ordered structures/phases (LPSOs) of Mg alloys [56], the local FCC-HCP transformation in the grain boundary of Fe and Al alloys [60,61], the local D0 23 and D0 22 phase transformations in superlattice intrinsic stacking fault (SISF), and antiphase boundaries (APBs) of superalloys [57,62]. Moreover, with the guidance of the electron redistributions in terms of bonding charge density [56,65,66,67] and electron localization functions [68,69], new insights are provided into those microstates/SROs/clusters and structural phase transformations quantitatively and qualitatively.…”
Section: Electrons To Phases and Properties: Key Roles Of Microstatesmentioning
confidence: 99%
“…Moreover, with the guidance of the electron redistributions in terms of bonding charge density [56,65,66,67] and electron localization functions [68,69], new insights are provided into those microstates/SROs/clusters and structural phase transformations quantitatively and qualitatively. They are utilized to reveal the physical nature of chemical bond of pure metals (Al [61,70], Ag [71], Fe [60,72], Mg, Ti [73,74]), alloys (Co-based [57,62] and Ni-based [75]alloys), Fe-X alloys [60,72], Mg-RE-TM alloys [67,76], RHEAs [49,51], Ti-X alloys [73,74] [78], and Fe 3 O), semiconductors (graphene [65], sulfur [79], sulfides [79], and SiC [80]), and structural defects (stacking faults [62,73,81], APBs [57,75], grain boundaries [61,72], and dislocations [82,83]), which also reveal the fundamental solid-solution strengthening/embrittlement mechanism [61,73] and the grain refinement mechanism [70,74].…”
Section: Electrons To Phases and Properties: Key Roles Of Microstatesmentioning
confidence: 99%
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“…Recently, optoelectronic devices fabricated from MoS 2 have received notable attention [3][4][5][6]. MoS 2 phototransistors are easy to fabricate, respond to a wide range of wavelengths [3,7], and exhibit fast DC photoresponses [8,9]. In addition, their photoresponsivity can be tuned by various methods, such as back-gating [10,11], encapsulation in HfO 2 [12], strain engineering [13], layer decoupling [14] and evaporation of sub-stoichiometric molybdenum oxide overlayers [15].…”
mentioning
confidence: 99%
“…We obtain good linear fits of R ph as a function of power, P , across the whole gate bias range, before and after plasma treatment. The negative slope in the log-log plot indicates the saturation of trap states in the material with increasing incident optical power [3,7,44]. In Fig.…”
mentioning
confidence: 99%