Intersubband absorption in GaN nanowire heterostructures at mid-infrared wavelengths

Ajay, Akhil; Blasco, R.; Polaczyński, Jakub; Spies, Maria; Hertog, M. den; Monroy, E.

doi:10.1088/1361-6528/aacf55

Cited by 6 publications

(5 citation statements)

References 47 publications

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“…The intersubband absorption from 1.4 to 3.4 μm was observed for AlN/GaN MQWs. By using AlGaN/GaN MQWs, the intersubband absorption at 4.5–6.4 μm was realized. − …”

Section: Iii-nitride Nanowire Materials and Devicesmentioning

confidence: 99%

Synthesis and Applications of III–V Nanowires

et al. 2019

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Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III−V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.

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“…The intersubband absorption from 1.4 to 3.4 μm was observed for AlN/GaN MQWs. By using AlGaN/GaN MQWs, the intersubband absorption at 4.5–6.4 μm was realized. − …”

Section: Iii-nitride Nanowire Materials and Devicesmentioning

confidence: 99%

Synthesis and Applications of III–V Nanowires

et al. 2019

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“…The energy band diagram of the heterojunction under equilibrium state is shown in figure 5(a) and in reverse bias under UV and red illumination is shown in figure 5(b). The conduction band bottom of Si is very close to that of GaN (the difference is 0.05 eV), while the bandgap of Si and GaN is 1.12 eV and 3.4 eV [34,35], respectively. For the silicon nanomembrane, because its doping concentration is 2×10 13 cm −3 , its Fermi level is 0.18 eV below the intrinsic Fermi level of Si.…”

Section: Electrical and Photo-response Properties Of The Si/gan Heter...mentioning

confidence: 82%

A p-Si/n-GaN diode fabricated by nanomembrane lift-off and transfer-print technique

Liu¹,

Wang²,

Wang³

et al. 2019

Semicond. Sci. Technol.

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In this paper, we successfully demonstrated a high quality p-Si/n-GaN heterojunction diode through van der Waals bonding implemented by nanomembrane lift-off and transfer-print technique. A nanoscale native oxide layer is observed at the interface by transmission electron microscope, which plays a role as passivation-layer. The heterojunction diode has excellent electrical performance with a high rectification ratio of 4.75×10 5 at 3 V and a low reverse dark current density of 4.03×10 -4 A cm −2 at −3 V. In addition, the heterojunction diode responds to both near ultraviolet (375.6 nm) and red light (650 nm) with responsivity of 429.9 mA W −1 and 66.8 mA W −1 (at −3 V) respectively. This result indicates that a largelattice-mismatched semiconductor heterojunction can be fabricated based on GaN by using transfer-print technique, thereby expanding the operating band of GaN-based detectors from ultraviolet region to visible region.

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“…36 The infrared corresponding data are shown in Figure 3d, resulting in the modified products which mainly included GaO(OH), GaN, N−H, and O−H. 37,38 As depicted in Figure 3e, the Raman spectrum of the modified products provided additional confirmation that the ammonia aqueous solution reacted with LMs to form GaO(OH) and GaN. 39 Furthermore, the annealing process resulted in GaO(OH) obviously shifting the scattering peaks to β-Ga 2 O 3 .…”

Section: Resultsmentioning

confidence: 99%

Directly Printable Flexible Optoelectronics through Surface Atomic Modification of Liquid Metals at Room Temperature

Duan,

Zhou,

Zhao

et al. 2024

ACS Appl. Mater. Interfaces

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Flexible optoelectronics have fully demonstrated their transformative roles in various fields, but their fabrication and application have been limited by complex processes. Liquid metals (LMs) are promising to be ideal raw materials for making flexible optoelectronics due to their extraordinary fluidity and printability. Herein, we propose a painting-modifying strategy based on solution processability for directly printing out fluorescent flexible optoelectronics from LMs via surface modification. The LMs of eGaIn, which were obtained by the mixing of gallium with indium metal spheres, were used as ink to paint high-finesse patterns on flexible substrates. Through introducing surface modification of LMs, the gallium atom on the surface of the LMs was directly transformed into the composite fluorescent functional layers of GaO(OH) and GaN after being modified with an ammonia aqueous solution. Owing to painting, this strategy is not limited by any curved surfaces, shapes, or facilities and has excellent adaptability. Particularly, the fluorescent layers were obtained through a spontaneous, instantaneous, and solution-processable process that is environmentally friendly, easy to administrate, recyclable, and adjustable. The present finding breaks through the limitations of LMs in making flexible optoelectronics and provides strategies for addressing severe challenges facing existing materials and flexible optoelectronics. This method is expected to be very useful for fabricating flexible lights, transformable displays, intelligent anticounterfeiting devices, skin-inspired optoelectronics, and chameleon-biomimetic soft robots in the coming time.

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Intersubband absorption in GaN nanowire heterostructures at mid-infrared wavelengths

Cited by 6 publications

References 47 publications

Synthesis and Applications of III–V Nanowires

Synthesis and Applications of III–V Nanowires

A p-Si/n-GaN diode fabricated by nanomembrane lift-off and transfer-print technique

Directly Printable Flexible Optoelectronics through Surface Atomic Modification of Liquid Metals at Room Temperature

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