Intersubband absorption in Si1-xGex/Si and δ-dope Si multiple quantum wells

Wang, Kang L.; Karunasiri, R. P. G.; Park, J.S.

doi:10.1016/0039-6028(92)91092-p

Cited by 13 publications

(2 citation statements)

References 22 publications

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“…The difference between the basic level and the top of valence band, in our calculation, is of ~9 0 meV for p 2~ = 2.4 x 1013 cn-'. Wang et al [20] also obtained experimental intersubband absorption spectra in B 6-doped Si multiple quantum wells.…”

Section: Resultsmentioning

confidence: 86%

Electronic states in B δ‐doped Si quantum well

Gaggero‐Sager¹,

Pérez‐Álvarez²

1996

Physica Status Solidi (b)

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This work presents a self-consistent calculation of the electronic structure of B &doped Si quantum well. By examining the dependence of the energy levels, the Fermi level and the depth of the well with the impurity concentration, it is shown that the model is valid for impurity concentration not higher than 1 x cm-2 and that the Fermi level is very close to the valence band. Calculations are compared with experimental data obtained for p z~ = 2.4 x loi3 cm-', 3.5 x cm-2, and 9.5 x cm-'. The results agree quite well with the experimental results available for this system.

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Section: Resultsmentioning

confidence: 86%

Electronic states in B δ‐doped Si quantum well

Gaggero‐Sager¹,

Pérez‐Álvarez²

1996

Physica Status Solidi (b)

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“…This has been observed in GaAs g-doped with Si [97] and in S] g-doped with Sb [98], where the absorption is between electron sub-bands, and also in Si g-doped with B [99], where hole transitions are used. These results are promising for the exploitation of g-doped layers as infrared detectors.…”

Section: Optical Propertiesmentioning

confidence: 91%

Delta-doping of semiconductors

Harris

1993

J Mater Sci: Mater Electron

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AN INVITED REVIEWThe structural, electrical and optical properties of epitaxial semiconductor layers, delta-doped with impurity atoms, are reviewed. The majority of the discussion relates to GaAs, the moststudied material, but where possible, results for Si and other semiconductors will be presented. Although the ideal situation is one of dopant atoms confined to a single atomic plane, there are several factors, such as diffusion and segregation, which broaden the profiles, and techniques to minimize these effects are discussed. The electrostatic attraction between free carriers and ionized dopants results in a V-shaped potential well, perpendicular to the dopant plane, which confines the carriers into a quasi-two-dimensional sheet, and quantizes their energy into a series of sub-bands. This has significant consequences for the electrical and optical properties of the layers, and results of such measurements on these structures are presented. Several features of delta-doped layers are attractive for exploitation in devices, and this is illustrated by reference to a number of novel or improved device designs.

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Hole Energy Levels in p-Type δ-Doped Si Quantum Wells: Influence of the Split-Off Band

Gaggero‐Sager

2000

phys. stat. sol. (b)

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Electronic structure calculations in p‐type B δ‐doped Si quantum wells are carried out self‐consistently and within the Thomas‐Fermi approximation. The calculations assume a three independent (hh + lh + so) hole band model. The numerically calculated spectra are compared between themselves and with experimental results, making emphasis on the effects of the inclusion of the so hole band. The use of a three‐independent band model is presented for the first time in a Thomas‐Fermi approximation. Despite of the simplicity of this theory, comparison of the obtained results with self‐consistent theoretical calculations gives good agreements.

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Intersubband absorption in Si1-xGex/Si and δ-dope Si multiple quantum wells

Cited by 13 publications

References 22 publications

Electronic states in B δ‐doped Si quantum well

Electronic states in B δ‐doped Si quantum well

Delta-doping of semiconductors

Hole Energy Levels in p-Type δ-Doped Si Quantum Wells: Influence of the Split-Off Band

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