Intersubband Device Modeling of Gallium Nitride High Electron Mobility Transistor for Terahertz Applications

Kaneriya, R.K.; Rastogi, Gunjan; Basu, Palash Kumar; Upadhyay, R. B.; Bhattacharya, Amartya Kumar

doi:10.1029/2019rs006844

Cited by 13 publications

(14 citation statements)

References 29 publications

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“…In the present modeling work, we report that the standard GSG device geometry of HEMT itself acts as a metamaterial structure. The enhancement of THz interaction with 2DEG inside the triangular quantum well is [12]).…”

Section: Metamaterial-embedded Isbtmentioning

confidence: 99%

“…In this section, we present our theoretical model based on ISBT, metamaterial and plasmonic phenomena for GaN HEMT THz applications [11][12][13]. We proposed a combined plasmonic and metamaterial-driven ISBT phenomenon as one of the possible modes that can extend GaN HEMT operating frequency well beyond its present cut-off frequency to the THz band.…”

Section: Theoretical Modeling and Simulation Strategymentioning

confidence: 99%

“…), it possesses a (a) GaN Heterostructure, (b) HEMT cross-sectional view and (c) HEMT mesh structure (reprinted with permission from Ref. [12]). piezoelectric polarization (P PE ) component, while the absence of the center of inversion symmetry and uniaxial nature of the crystal structure produces spontaneous polarization (P SP ).…”

Section: Polarization In Gan Heterostructurementioning

confidence: 99%

“…A sufficient number of variants are kept in fabrication in terms of device length and number of device fingers for wider statistical data. Device length varies from 50 to 300 micron (50,100,150,200,300), while number of fingers varies from 2 to 12 (2,4,6,8,10,12). All devices have a 100-nm mushroom gate structure.…”

Section: Fabrication and Measurement Of Gan Hemt Devicesmentioning

confidence: 99%

“…Figure 1. (a) GaN Heterostructure, (b) HEMT cross-sectional view and (c) HEMT mesh structure (reprinted with permission from Ref [12]…”

mentioning

confidence: 99%

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A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications

Kaneriya¹,

Rastogi²,

Basu³

et al. 2022

Terahertz Technology

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Terahertz (THz) technology has attracted tremendous attention recently due to its promising applications in various domains such as medical, biological, industrial imaging, broadband, safety, communication, radar, space science, and so on. Due to non-availability of powerful sources and highly sensitive and efficient detectors, the so-called THz gap remains largely unfilled. Despite seamless efforts from electronics and photonics technology researchers, the desired level of technology development to fill the THz gap still remains a challenge. GaN-based HEMT structures have been investigated as potential THz sources and detectors by a number of researchers. This chapter presents a very new and versatile mechanism for electrical tuning of intersubband transitions (ISBT) GaN high electron mobility transition (HEMT) devices. ISBT phenomena are usually demonstrated in photonic devices like a quantum cascade laser (QCL). Here we explore ISBT in an electronic GaN HEMT device. Conventional photonic devices like a QCL are operated at cryogenic temperature to minimize thermal effect. Tuning the conduction band through external gate bias is an advantage of an HEMT device for room temperature (RT) THz applications. This chapter demonstrates the theoretical and experimental novel ISBT phenomenon in GaN HEMT is for potential ambient applications in the THz range.

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Section: Metamaterial-embedded Isbtmentioning

confidence: 99%

Section: Theoretical Modeling and Simulation Strategymentioning

confidence: 99%

Section: Polarization In Gan Heterostructurementioning

confidence: 99%