Intersubband optical absorption in (In,Ga)N/GaN double quantum wells considering applied electric field effects

En-nadir, Redouane; Ghazi, Haddou El; Jorio, Anouar; Zorkani, Izeddine; Kılıç, Hamdi Şükür

doi:10.1007/s10825-021-01830-4

Cited by 11 publications

(4 citation statements)

References 24 publications

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“…Accuracy depends on factors such as the complexity of the problem, choices of numerical parameters, and computing resources, unlike conventional methods such as perturbative and variational techniques. It is important to note that, for the determination of energy levels and their corresponding wave functions, we consider the following boundary conditions [ 23 , 38 , 57 , 58 , 59 ]:

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Section: Theory and Modelsmentioning

confidence: 99%

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, a ternary compound, exhibits outstanding traits—encompassing the solar spectrum (0.78 eV to 3.42 eV), high absorption, radiation resistance, thermal stability, and exceptional chemical robustness [ 19 , 20 ]. Moreover, the optical properties of InGaN/GaN systems under different internal and external conditions have been intensively investigated [ 21 , 22 , 23 , 24 , 25 , 26 ]. Optoelectronic devices employing these materials can experience degradation due to the strong integrated electric field (BEF), leading to a decline in overall performance.…”

Section: Introductionmentioning

confidence: 99%

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Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

Abboudi,

EL Ghazi,

En-nadir

et al. 2024

Nanomaterials

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This paper presents a thorough numerical investigation focused on optimizing the efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials. The optimization strategy encompasses manipulating confinement potential energy, controlling hydrostatic pressure, adjusting compositions, and varying thickness. The built-in electric fields in (In, Ga)N alloys and heavy-hole levels are considered to enhance the results’ accuracy. The finite element method (FEM) and Python 3.8 are employed to numerically solve the Schrödinger equation within the effective mass theory framework. This study reveals that meticulous design can achieve a theoretical photovoltaic efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) that surpasses the Shockley–Queisser limit. Moreover, reducing the thickness of the layers enhances the light-absorbing capacity and, therefore, contributes to efficiency improvement. Additionally, the shape of the confinement potential significantly influences the device’s performance. This work is critical for society, as it represents a significant advancement in sustainable energy solutions, holding the promise of enhancing both the efficiency and accessibility of solar power generation. Consequently, this research stands at the forefront of innovation, offering a tangible and impactful contribution toward a greener and more sustainable energy future.

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…”

Section: Theory and Modelsmentioning

confidence: 99%

“…

Section: Introductionmentioning

confidence: 99%

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

Abboudi,

EL Ghazi,

En-nadir

et al. 2024

Nanomaterials

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show abstract

“…Accuracy depends on factors like problem complexity, numerical parameter choices, and computational resources in contrast to conventional methods like perturbative and variational techniques. Importantly, for the determination of energy levels and their corresponding wave functions, we consider the following boundary conditions [34,39]:…”

Section: Theory and Modelmentioning

confidence: 99%

Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity

En-nadir,

Basyooni-M. Kabatas,

Tihtih

et al. 2023

Nanomaterials

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Ultra-thin quantum wells, with their unique charge confinement effects, are essential in enhancing the electronic and optical properties crucial for optoelectronic device optimization. This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specifically addressing both intra-subband (ISB: e-e) and band-to-band (BTB: e-hh) transitions within InGaN/GaN quantum wells (QWs). Our research unveils that the radiative lifetimes in ISB and BTB transitions are significantly influenced by external excitation, particularly in thin-layered QWs with strong confinement effects. In the case of ISB transitions (e-e), the recombination lifetimes span a range from 0.1 to 4.7 ns, indicating relatively longer durations. On the other hand, BTB transitions (e-hh) exhibit quicker lifetimes, falling within the range of 0.01 to 1 ns, indicating comparatively faster recombination processes. However, it is crucial to note that the thickness of the quantum well layer exerts a substantial influence on the radiative lifetime, whereas the presence of impurities has a comparatively minor impact on these recombination lifetimes. This research advances our understanding of transition lifetimes in quantum well systems, promising enhancements across optoelectronic applications, including laser diodes and advanced technologies in detection, sensing, and telecommunications.

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“…Still, the nano-structural interest maintains discussions on the optical transitions under wide band gap [17][18][19]. In a recent study, size-dependence of infrared transitions within InGaN/GaN quantum dots (QDs) has been obtained and found that the presence of a donor impurity has also been proved to be effective for a given Coulomb interaction [20].…”

Section: Introductionmentioning

confidence: 99%

Infrared relative dielectric permittivity and refractive index on the spherical CdSe/ZnS heteronanocrystals with self-consistent field

Ortakaya,

Duque

2024

Phys. Scr.

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We deal with allowed-subband quantum states of two-electron in a semiconductor spherical core/shell quantum dot. Within framework of the infrared transitions, solving the Schrödinger-Poisson equation for many body interactions on the conduction-subbands, we obtain energy shifts in the absorption peaks of dielectric function and refractive index. The energy eigenvalues of the CdSe/ZnS nanocrystal have been computed as a function of the layer thicknesses via self-consistent field. The transitions related to $D^{-}$ and $D^0$ states, have been plotted considering linear dielectric permittivity. Refractive index and absorption coefficient under 3.0 nm radius have been also presented as a function of infrared photon energies.

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Intersubband optical absorption in (In,Ga)N/GaN double quantum wells considering applied electric field effects

Cited by 11 publications

References 24 publications

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity

Infrared relative dielectric permittivity and refractive index on the spherical CdSe/ZnS heteronanocrystals with self-consistent field

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