Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary  Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System

Narihiro, M.; Wakabayashi, Hitoshi; Ueki, Makoto; Arai, K.; Ogura, Takashi; Ochiai, Yukinori; Mogami, Tohru

doi:10.1143/jjap.39.6843

Cited by 4 publications

(2 citation statements)

References 11 publications

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“…In the mid-1990s a new lithography process combining UV and electron beam exposure on just one resist layer has been presented in several papers [7][8][9]. This kind of approach is called intra-level mix and match lithography (ILM&M) and has the advantage of time saving because only structures below the UV lithography's resolution limit are written by EBL whereas structures above the resolution limit of UV lithography are exposed by UV radiation [2,[9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Development of an e-beam/i-line stepper intra-level mix and match approach with the photoresist mr-EBL 6000.5 for PIC related structures such as waveguides, ring resonators and coupling structures

Reinhardt,

Helke,

Schermer

et al. 2023

38th European Mask and Lithography Conference (EMLC 2023)

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Section: Introductionmentioning

confidence: 99%

Development of an e-beam/i-line stepper intra-level mix and match approach with the photoresist mr-EBL 6000.5 for PIC related structures such as waveguides, ring resonators and coupling structures

Reinhardt,

Helke,

Schermer

et al. 2023

38th European Mask and Lithography Conference (EMLC 2023)

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“…5 The throughput is expected to increase from 0.1 wafers/ h to 1 -5 wafers/ h by using mix-and-match lithography. It is well known that many deep ultraviolet ͑DUV͒ resists are sensitive to an electron beam and the property has been made use of to develop processes for DUV resists using electron beam lithography.…”

Section: Introductionmentioning

confidence: 99%

Improving electron beam resist sensitivity by preexposure to deep ultraviolet radiation

Murali

Brown

Martin

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inImproved etch resistance of ZEP 520A in reactive ion etching through heat and ultraviolet light treatment Electron beam lithography, when combined with optical lithography, is a promising approach to obtain good throughput. A bottleneck for this is resist sensitivity and the concomitant shot-noise limit for resolution. It is possible to obtain increased sensitivity without reducing resolution by preexposing electron beam resist to deep ultraviolet radiation before electron beam patterning. Results show that up to a 30% reduction in required dosage is obtained with this method; the associated trade off in dissolution of unexposed areas and critical dimension sensitivity is minimal. Resolution is also maintained and sub-50 nm lines with good aspect ratio have been demonstrated.

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Charged‐Particle Lithography

Berger¹,

Kretz²,

Beyer³

et al. 2010

Nanotechnology

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Although, today, the main method for pattering almost all integrated circuits (ICs) is photolithography, charged‐particle lithography – where charged particles (electrons, ions) are used for patterning – already has a wide range of applications. Electron beam lithography (EBL) is currently utilized for fabricating the photomasks essential for photolithography, as a time‐ and cost‐effective technique for early device and technology development, and also for fabricating the imprint templates necessary for the emerging technique of nanoimprint lithography (NIL). All of these applications are enabled by single‐beam writing techniques, which are undergoing continuous improvement. However, as photomask costs have increased, and continue to increase, it has become almost untenable to produce high‐end ICs in low volume. Hence, today the use of field‐programmable gate arrays (FPGAs) has surpassed that of the faster and more highly integrated application‐specific integrated circuits (ASICs). Consequently, promising new multiple‐beam writing techniques are currently under development, known as maskless lithography (ML2), for the volume production of ICs. Ion beam lithography (IBL) represents an alternative approach for the fabrication of imprint templates for NIL, with the advantage of not requiring resist processing. Currently, both EBL and IBL are the only viable methods for fabricating nano‐electromechanical systems and nanotechnology devices, and therefore are essential tools for the emerging nanotechnology.

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Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System

Cited by 4 publications

References 11 publications

Development of an e-beam/i-line stepper intra-level mix and match approach with the photoresist mr-EBL 6000.5 for PIC related structures such as waveguides, ring resonators and coupling structures

Development of an e-beam/i-line stepper intra-level mix and match approach with the photoresist mr-EBL 6000.5 for PIC related structures such as waveguides, ring resonators and coupling structures

Improving electron beam resist sensitivity by preexposure to deep ultraviolet radiation

Charged‐Particle Lithography

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