Intragap states in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SmB</mml:mi></mml:mrow><mml:mrow><mml:mn>6</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Sluchanko, N. E.; Ġlushkov, V. V.; Gorshunov, B.; Demishev, S. V.; Kondrin, M. V.; Pronin, A. A.; Волков, А. А.; Savchenko, A. K.; Grüner, G.; Bruynseraede, Y.; Moshchalkov, Victor; Kunii, S.

doi:10.1103/physrevb.61.9906

Cited by 73 publications

(50 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1a). For all thicknesses, we obtain a thickness-independent energy gap of ∆ = 3.3 ± 0.2 meV, consistent with other transport measurements [8,12,21,24,25]. The values of r s and r b are presented in Figs.…”

supporting

confidence: 89%

Tuning Bulk and Surface Conduction in the Proposed Topological Kondo InsulatorSmB6

Syers¹,

Kim²,

Fuhrer³

et al. 2015

Phys. Rev. Lett.

135

131

View full text Add to dashboard Cite

Bulk and surface state contributions to the electrical resistance of single-crystal samples of the topological Kondo insulator compound SmB6 are investigated as a function of crystal thickness and surface charge density, the latter tuned by ionic liquid gating with electrodes patterned in a Corbino disk geometry on a single surface. By separately tuning bulk and surface conduction channels, we show conclusive evidence for a model with an insulating bulk and metallic surface states, with a crossover temperature that depends solely on the relative contributions of each conduction channel. The surface conductance, on the order of 100 e 2 /h and electron-like, exhibits a field-effect mobility of 133 cm 2 /Vs and a large carrier density of ∼ 2 × 10 14 cm −2 , in good agreement with recent photoemission results. With the ability to gate-modulate surface conduction by more than 25%, this approach provides promise for both fundamental and applied studies of gate-tuned devices structured on bulk crystal samples.

show abstract

supporting

confidence: 89%

Tuning Bulk and Surface Conduction in the Proposed Topological Kondo InsulatorSmB6

Syers¹,

Kim²,

Fuhrer³

et al. 2015

Phys. Rev. Lett.

135

131

View full text Add to dashboard Cite

show abstract

“…In Fig.1a we show the temperature dependence of electrical resistance measured in a SmB 6 sample upon cooling under pressures up to 36.8 GPa. The resistance of the sample at 1.1 GPa displays a continuous increase upon cooling and then exhibits a plateau below 5 K, identical to the behavior at ambient pressure [2,4,12,[42][43][44][45][46].…”

mentioning

confidence: 74%

Hall-coefficient diagnostics of the surface state in pressurized SmB6

et al. 2020

View full text Add to dashboard Cite

In this study, we report the first results of the high-pressure Hall coefficient (R H ) measurements in the putative topological Kondo insulator SmB 6 up to 37 GPa. Below 10 GPa, our data reveal that R H (T) exhibits a prominent peak upon cooling below 20 K. Remarkably, the temperature at which surface conduction dominates coincides with the temperature of the peak in R H (T). The temperature dependent resistance and Hall coefficient can be well fitted by a two-channel model with contributions from the metallic surface and the thermally activated bulk states. When the bulk of SmB 6 becomes metallic and magnetic at ~ 10 GPa, both the R H (T) peak and the resistance plateau disappear simultaneously. Our results indicate that the R H (T) peak is a fingerprint to diagnose the presence of a metallic surface state in SmB 6 . The high-pressure magnetic state of SmB 6 is robust to 180 GPa, and no evidence of superconductivity is observed in the metallic phase.

show abstract

“…The magnetic, optical, and thermal transport properties of this narrow-gap semiconductor have been extensively investigated in the last half-century [8][9][10][11][12]. The most puzzling issue is the lack of divergence in the resistivity at low temperatures, which has always been attributed to in-gap states [13][14][15][16]. Recently, there have been theoretical and experimental demonstrations that such in-gap states might be topological surface states [17][18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB₆ Single Crystal, a Topological Kondo Insulator

Yue

Wang

et al. 2015

J. Phys. Soc. Jpn.

View full text Add to dashboard Cite

Topological Kondo insulators have been attracting great attention from the condensed-matter physics community due to their fascinating topological and strongly correlated properties. Here, we report angledependent c-axis magnetoresistance (MR) oscillations in a Kondo insulator, SmB 6 single crystal, in a magnetic field of up to 13 T rotated in the ab-plane. Four-fold symmetric MR oscillations are first observed above 8 K, which result from the four-fold (C 4 ) degeneracy of the bulk Fermi surface of SmB 6 . With decreasing temperature down to 2.3 K, the C 4 symmetry of the MR oscillations gradually weakens and C 2 symmetry appears. This demonstrates a crossover from three-dimensional bulk states to two-dimensional surface states and implies the possible emergence of topological nematic states. Our experimental observations shed new light on the metallic surface states and nematic states in the Kondo insulator SmB 6 .

show abstract

Intragap states inSmB6

Cited by 73 publications

References 12 publications

Tuning Bulk and Surface Conduction in the Proposed Topological Kondo InsulatorSmB6

Tuning Bulk and Surface Conduction in the Proposed Topological Kondo InsulatorSmB6

Hall-coefficient diagnostics of the surface state in pressurized SmB6

Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB₆ Single Crystal, a Topological Kondo Insulator

Contact Info

Product

Resources

About

Intragap states inSmB6

Cited by 73 publications

References 12 publications

Tuning Bulk and Surface Conduction in the Proposed Topological Kondo InsulatorSmB6

Tuning Bulk and Surface Conduction in the Proposed Topological Kondo InsulatorSmB6

Hall-coefficient diagnostics of the surface state in pressurized SmB6

Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB6 Single Crystal, a Topological Kondo Insulator

Contact Info

Product

Resources

About

Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB₆ Single Crystal, a Topological Kondo Insulator