Intrashell Yb<sup>3+</sup> Transitions in Gallium Sulphide Single Crystals

Тагиев, Б. Г.; Niftiev, G. M.; Абушов, С. А.

doi:10.1002/pssb.2221180157

Cited by 10 publications

(5 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Single crystals were grown by a modified Bridgman method [2] and were  -type. The process was run in a single-zone furnace at 1030°ë .…”

Section: Methodsmentioning

confidence: 99%

“…In particular, the influence of rare-earth ions on the electrical, photoelectric, and luminescent properties of GaSe, GaS, InSe and other III-VI crystals has been the subject of extensive studies [1][2][3][4][5][6]. In particular, the influence of rare-earth ions on the electrical, photoelectric, and luminescent properties of GaSe, GaS, InSe and other III-VI crystals has been the subject of extensive studies [1][2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

10.1007/s10789-008-1001-2

2000

CrossRef Listing of Deleted DOIs

View full text Add to dashboard Cite

Data are presented on the 300-K photoluminescence in GaS crystals doped with Er 3+ or codoped with Er 3+ and Yb 3+ . IR excitation ( λ ex = 976 nm) gives rise to anti-Stokes luminescence in GaS:Er 3+ (0.1 at %) and GaS:Er 3+ ,Yb 3+ (0.1 + 0.1 at %) and leads to an increased intensity of the emission due to the 4 I 11/2 4 I 15/2 transitions. The anti-Stokes luminescence is shown to result from consecutive absorption of two photons by one Er 3+ ion, and the increased intensity of Er 3+ luminescence in GaS: Er 3+ ,Yb 3+ is due to energy transfer from Yb 3+ to Er 3+ .

show abstract

“…Single crystals were grown by a modified Bridgman method [2] and were  -type. The process was run in a single-zone furnace at 1030°ë .…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

10.1007/s10789-008-1001-2

2000

CrossRef Listing of Deleted DOIs

View full text Add to dashboard Cite

show abstract

“…2) A great deal of attention has been devoted to the study of the optical and electrical properties of GaS. [3][4][5][6][7][8][9][10][11][12] It is considered very useful to have detailed information on the impurity levels of GaS for the fabrication of high-quality devices. The impurity levels in undoped n-GaS have been investigated by photoinduced-current-transient spectroscopy, and space-charge-limited-current and Hall effect measurements.…”

Section: Introductionmentioning

confidence: 99%

“…There have been a few studies carried out on the impurity levels in intentionally doped GaS. The four peaks related to the 4f-4f intershell transitions of the Yb 3þ ions in GaS have been observed in the PL spectrum at 77 K. 9) The donor level located at 0.44 eV below the conduction band has been detected in n-GaS doped with I 2 . 10) The radiative transitions of Cu-doped GaS have been studied using PL and electroluminescence measurements.…”

Section: Introductionmentioning

confidence: 99%

Impurity Levels in Layered Semiconductor GaS Doped with Cu

Shigetomi

Sakai

Ikari

2005

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The radiative recombination mechanisms of Cu-doped GaS have been investigated on the basis of photoluminescence (PL) measurements. The PL spectrum (at 77 K) related to the impurity level is dominated by a newly observed emission band at 1.97 eV. The temperature dependence of the full width at half-maximum and the shape of the PL spectrum are characterized by the recombination mechanism of the configurational coordinate model. It is found that the 1.97 eV emission band is related to the complex of vacancies and Cu atoms. In addition, it was found from optical absorption measurements that the acceptor level at approximately 0.4 eV above the valence band is formed by doping of Cu atoms.

show abstract

“…The four peaks related to the 4f-4f intershell transitions of the Yb 3þ ions in GaS have been observed in the photoluminescence (PL) spectra at 77 K. 4) By thermally stimulated current measurements, the donor level located at 0.44 eV below the conduction band has been detected in n-GaS doped with I 2 . 5) The radiative transitions of Cu-doped GaS have been studied by PL and electroluminescence measurements.…”

mentioning

confidence: 99%

Temperature Dependence of Photoluminescence in Layered Semiconductor n-GaS Doped with Sn

Shigetomi¹,

Ikari

2010

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The radiative recombination mechanisms of Sn-doped GaS have been investigated by photoluminescence (PL) measurements. The PL spectrum at 77 K appears in the energy region between 1.25 and 2.3 eV and is dominated by two emission bands. The temperature dependence of the full-width at half-maximum and the shapes of the PL spectra of the two emission bands are characterized by the recombination mechanism of the configurational coordinate model. The origins of the two emission bands are related to the complex centers of vacancies and impurity atoms.

show abstract

Intrashell Yb³⁺ Transitions in Gallium Sulphide Single Crystals

Cited by 10 publications

References 5 publications

10.1007/s10789-008-1001-2

10.1007/s10789-008-1001-2

Impurity Levels in Layered Semiconductor GaS Doped with Cu

Temperature Dependence of Photoluminescence in Layered Semiconductor n-GaS Doped with Sn

Contact Info

Product

Resources

About

Intrashell Yb3+ Transitions in Gallium Sulphide Single Crystals

Cited by 10 publications

References 5 publications

10.1007/s10789-008-1001-2

10.1007/s10789-008-1001-2

Impurity Levels in Layered Semiconductor GaS Doped with Cu

Temperature Dependence of Photoluminescence in Layered Semiconductor n-GaS Doped with Sn

Contact Info

Product

Resources

About

Intrashell Yb³⁺ Transitions in Gallium Sulphide Single Crystals