Intrinsic and extrinsic conduction contributions at nominally neutral domain walls in hexagonal manganites

Schultheiß, Jan; Schaab, Jakob; Småbråten, Didrik René; Skjærvø, Sandra Helen; Bourret, Edith; Yan, Z.; Selbach, Sverre M.; Meier, Dennis

doi:10.1063/5.0009185

Cited by 14 publications

(24 citation statements)

References 48 publications

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“…[23] The enhanced conduction was explained based on oxygen interstitials, which accumulate at the neutral walls due to a lower formation energy compared to the bulk, increasing the density of mobile hole carriers. [23,24] AC-cAFM data obtained from charged ferroelectric domain walls in h-ErMnO 3 are displayed in Figure 5c. The AC-cAFM scan was taken at 0.5 MHz and shows suppressed and enhanced AC-driven current signals at head-to-head and tail-to-tail domain walls, respectively.…”

Section: Electrical Half-wave Rectification At Domain Walls In H-ermnomentioning

confidence: 99%

“…

the engineering of the electrical conductivity at domain walls via chemical doping, [14][15][16][17][18][19][20][21] annealing in controlled oxygen atmospheres, [22][23][24][25][26][27][28][29] or, alternatively, by utilizing the polarization charge as reconfigurable quasidopant. [30] An important degree of freedom that is unique to the domain walls and not available at conventional functional interfaces is their spatial mobility.

…”

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confidence: 99%

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Unveiling Alternating Current Electronic Properties at Ferroelectric Domain Walls

Schultheiß

Rojac

Meier

2021

Adv Elect Materials

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Ferroelectric domain walls exhibit a range of interesting electrical properties and are now widely recognized as functional 2D systems for the development of next‐generation nanoelectronics. A major achievement in the field is the development of a fundamental framework that explains the emergence of enhanced electronic direct‐current conduction at the domain walls. Here, the much less explored behavior of ferroelectric domain walls under applied alternating‐current (AC) voltages is discussed. An overview of the recent advances in the nanoscale characterization is provided that allows for resolving the dynamic responses of individual domain walls to AC fields. In addition, different examples are presented, showing the unusual AC electronic properties that arise at neutral and charged domain walls in the kilo‐ to gigahertz regime. It is concluded with a discussion about the future direction of the field and novel application opportunities, expanding domain‐wall‐based nanoelectronics into the realm of AC technologies.

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Section: Electrical Half-wave Rectification At Domain Walls In H-ermnomentioning

confidence: 99%

“…

…”

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confidence: 99%

Unveiling Alternating Current Electronic Properties at Ferroelectric Domain Walls

Schultheiß

Rojac

Meier

2021

Adv Elect Materials

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“…In addition, enhanced conduction is observed at nominally neutral domain wall sections, which is consistent with previous work, where the enhancement was attributed to an accumulation of oxygen interstitials 13 and the sub-surface domain wall orientation. 30 To investigate the electronic properties of the charged domain walls in the kilo- to megahertz regime, we perform AC-cAFM 13 scans at the same position. AC-cAFM is a recent spectroscopy method, that allows for probing the dc response ( I dc out ) under applied bipolar voltages ( V ac in ) as a function of frequency ( Supporting Information and Figure S1 ).…”

Section: Results and Discussionmentioning

confidence: 99%

Charged Ferroelectric Domain Walls for Deterministic ac Signal Control at the Nanoscale

et al. 2021

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The direct current (d.c.) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual d.c. conduction ranging from insulating to metallic-like, which is leveraged in domain-wall-based memory, multi-level data storage, and synaptic devices. In contrast to the functional d.c. behaviors at charged walls, their response to alternating currents (a.c.) remains to be resolved. Here, we reveal a.c. characteristics at positively and negatively charged walls in ErMnO3, distinctly different from the response of the surrounding domains. By combining voltage-dependent spectroscopic measurements on macroscopic and local scales, we demonstrate a pronounced non-linear response at the electrode-wall junction, which correlates with the domain-wall charge state. The dependence on the a.c. drive voltage enables reversible switching between uni-and bipolar output signals, providing conceptually new opportunities for the application of charged walls as functional nanoelements in a.c. circuitry.

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“…Similarly, the metallic conductance at the nominally neutral domain walls of nano-domains in PZT has been attributed to pronounced curvature effects, leading to strongly charged wall segments below the surface [30]. Another more recent example is the observation of conductance modulations at nominally neutral domain walls in ErMnO 3 [17], which have been argued to arise as the walls within the material bend away from the chargeneutral position.…”

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confidence: 99%

“…Thus, their intrinsic electronic transport properties are difficult to access. The conduction of ferroelectric domain walls at surfaces and in near-surface regions has been analyzed by different scanning probe [14][15][16][17] and electron microscopy techniques [18][19][20][21][22][23] and the 3D behavior has been concluded from scans obtained on different surfaces. To resolve the currents that are going through individual ferroelectric domain walls, top and bottom electrodes have been applied to thin films [14,24,25], single-crystals [10,26,27] and FIB-cut lamellas [28].…”

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The third dimension of ferroelectric domain walls

Roede¹,

Шаповалов²,

Moran³

et al. 2022

Preprint

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Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the domain wall orientation relative to the spontaneous polarization and switch between resistive and conductive states, controlling the electrical current. Being embedded in a 3D material, however, the domain walls are not perfectly flat and can form networks, which leads to complex physical structures. We demonstrate the importance of the nanoscale structure for the emergent transport properties, studying electronic conduction in the 3D network of neutral and charged domain walls in ErMnO3. By combining tomographic microscopy techniques and finite element modelling, we clarify the contribution of domain walls within the bulk and show the significance of curvature effects for the local conduction down to the nanoscale. The findings provide insights into the propagation of electrical currents in domain wall networks, reveal additional degrees of freedom for their control, and provide quantitative guidelines for the design of domain wall based technology.

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Intrinsic and extrinsic conduction contributions at nominally neutral domain walls in hexagonal manganites

Cited by 14 publications

References 48 publications

Unveiling Alternating Current Electronic Properties at Ferroelectric Domain Walls

Unveiling Alternating Current Electronic Properties at Ferroelectric Domain Walls

Charged Ferroelectric Domain Walls for Deterministic ac Signal Control at the Nanoscale

The third dimension of ferroelectric domain walls

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