Intrinsic Defects and the D1 to D4 Optical Bands Detected in Plastically Deformed Si

Jones, R.; Coomer, B.J.; Goss, Jonathan P.; Öberg, Sven; Briddon, P.R.

doi:10.1002/1521-3951(200011)222:1<133::aid-pssb133>3.0.co;2-d

Cited by 19 publications

(9 citation statements)

References 35 publications

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“…According to the literature, some impurity atoms in the dislocation core [205], dislocation jogs [206], segments of dislocations of special types (like Lomer dislocations) appearing due to dislocation reactions, multi-vacancies in the dislocation core [207] are typical examples of the possible origin of the D1 luminescence. When selecting a model it should be taken into account that the D1 band usually dominates the luminescence spectra in samples with a high local dislocation density (see, e.g., Figure 4.13(a)) where dislocations could interact with each other.…”

Section: Dislocation Luminescence: a Tool To Probe Gettering At Dislosupporting

confidence: 54%

Gettering Processes and the Role of Extended Defects

Seibt

Kveder

2012

Advanced Silicon Materials for Photovoltaic Applications

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Section: Dislocation Luminescence: a Tool To Probe Gettering At Dislosupporting

confidence: 54%

Gettering Processes and the Role of Extended Defects

Seibt

Kveder

2012

Advanced Silicon Materials for Photovoltaic Applications

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“…To date, no consensus has been reached as to the microscopic structure of the defects resulting in the D1 band luminescence. 12,13 Pizzini et al 12 have demonstrated that an oxygen precipitation anneal can also result in the formation of D1 centers. Further the energy of these peaks shift asymptotically with anneal duration from about 0.817 eV to the commonly reported value of 0.807 eV.…”

Section: Resultsmentioning

confidence: 99%

Electrical properties of pn junctions formed by plasma enhanced epitaxial growth

Reidy

Varhue

Adams

et al. 2002

Journal of Applied Physics

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Plasma enhanced selective area microcrystalline silicon deposition on hydrogenated amorphous silicon: Surface modification for controlled nucleation Properly functioning pn junction diodes have been fabricated by a low temperature plasma enhanced chemical vapor deposition ͑PECVD͒ technique. The diodes were constructed such that the metallurgical junction was coincident with the starting substrate surface. The electrical quality of the diodes was quantified by measuring their reverse bias leakage current. Contrary to popular opinion, it has been shown that the PECVD process is inherently capable of producing device quality material, and rather it is the in situ plasma cleaning technique typically associated with this method that is the cause of poor electrical performance. The chemical and physical nature of defects caused by the plasma cleaning step have been investigated by various experimental techniques including photoluminescence, secondary ion mass spectroscopy, and atomic force microscopy. The plasma cleaning step has been linked in certain cases to the production of a photoluminescence signal in Czochralski grown Si wafers. Results show that the plasma clean is neither required nor desired in the low temperature growth of device quality epitaxial Si thin films.

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“…The origin of the D1 and D2 lines is still not understood. There are investigations referring that both lines are related to impurity atoms in the dislocation core (Higgs et al, 1993), dislocation jogs (Watson et al, 1998), or segments of dislocations (Lomer dislocations) appearing due to dislocation reactions, multi-vacancy and/or self-interstitial clusters trapped in the core (Jones et al, 2000).…”

Section: Electronic Properties Of Dislocations In Siliconmentioning

confidence: 99%