Intrinsic electrical transport and magnetic properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">La</mml:mi></mml:mrow><mml:mrow><mml:mn>0.67</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ca</mml:mi></mml:mrow><mml:mrow><mml:mn>0.33</mml:mn></mml:mrow></mml:msub></mml:mrow></mml

Snyder, G. Jeffrey; Hiskes, R.; DiCarolis, Steve; Beasley, M. R.; Geballe, T. H.

doi:10.1103/physrevb.53.14434

Cited by 673 publications

(269 citation statements)

References 56 publications

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“…To understand the nature of electrical conduction behaviour in K-doped La 1-x Ca x MnO 3 materials, we have analysed the resistivity data using Mott's variable range hopping VRH model [14]. Originally in the VRH theory, there is a competition between the potential energy and the hopping distance of electrons.…”

Section: Discussion and Analysis Of Resultsmentioning

confidence: 99%

“…In the high-temperature semi-conducting regime (T [ T MI ), the electrical conduction is explained either by the spin polaronic conduction (SPC) model [14] or by the Mott's variable range hopping (VRH) model [15]. The doping at main site influences the polaronic transport as it causes change in the Polaron hopping distance and also the polaron concentration [16].…”

Section: Introductionmentioning

confidence: 99%

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Metallic and semi-conducting resistivity behaviour of La0.7Ca0.3−x K x MnO3 (x = 0.05, 0.1) manganites

Varshney

Dodiya

2014

J Theor Appl Phys

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The temperature dependence of electrical resistivity, q, of ceramic La 0.7 Ca 0.3-x K x MnO 3 (x = 0.05, 0.1) is investigated in metallic and semi-conducting phase. The metallic resistivity is attributed to be caused by electron-phonon, electron-electron and electron-magnon scattering. Substitutions affect average mass and ionic radii of A-site resulting in an increase in Debye temperature h D attributed to hardening of lattice with K doping. The optical phonon modes shift gradually to lower mode frequencies leading to phonon softening. Estimated resistivity compared with reported metallic resistivity, accordingly q diff. = [q exp. -{q 0 ? q e-ph (=q ac ? q op )}], infers electron-electron and electron-magnon dependence over most of the temperature range. Semi-conducting nature is discussed with variable range hopping and small polaron conduction model. The decrease in activation energies and increase in density of states at the Fermi level with enhanced Ca doping is consistently explained by cationic disorder and Mn valence.

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Section: Discussion and Analysis Of Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Metallic and semi-conducting resistivity behaviour of La0.7Ca0.3−x K x MnO3 (x = 0.05, 0.1) manganites

Varshney

Dodiya

2014

J Theor Appl Phys

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“…At low temperatures, a dominant T 2 term in resistivity has generally been observed [8,9,10]. Although the T 2 behavior is consistent with electronelectron interaction [11], the coefficient of the T 2 term is about 60 to 70 times larger than the one expected for electron-electron scattering [12].…”

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confidence: 90%

Spin-wave scattering at low temperatures in manganite films

et al. 2003

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The temperature T and magnetic field H dependence of the resistivity ρ has been measured for La0.8−ySr0.2MnO3 (y=0 and 0.128) films grown on (100) SrTiO3 substrates. The low-temperature ρ in the ferromagnetic metallic region follows well ρ(H, T ) = ρ0(H) + A(H)ωs/ sinh(hωs/2kBT ) + B(H)T 7/2 with ρ0 being the residual resistivity. We attribute the second and third term to smallpolaron and spin-wave scattering, respectively. Our analysis based on these scattering mechanisms also gives the observed difference between the metal-insulator transition temperatures of the films studied. Transport measurements in applied magnetic field further indicate that spin-wave scattering is a key transport mechanism at low temperatures. The observation of colossal magnetoresistance CMR effect in manganite films [1] has produced a resurgence of interest in these materials for both fundamental physics and their possible application in recording media and magnetic switching devices. The microscopic transport mechanism in these materials has long been thought to be double exchange DE [2,3,4]. However, it has been realized [5] that the effective carrier-spin interaction in the DE model is too weak to lead to a significant reduction of the electronic bandwidth, which would justify the observed several orders of magnitude increase in conductivity just below the Curie temperature T C . Indeed, a large number of experiments have shown that the DE scenario alone cannot account for the properties of the manganites and that CMR is not purely electronic in origin [6,7].Low-temperature charge transport measurements of manganites in the ferromagnetic metallic state are essential in clarifying the specific mechanisms responsible for the CMR effect. At low temperatures, a dominant T 2 term in resistivity has generally been observed [8,9,10]. Although the T 2 behavior is consistent with electronelectron interaction [11], the coefficient of the T 2 term is about 60 to 70 times larger than the one expected for electron-electron scattering [12]. Moreover, a careful check of the low-temperature resistivity [13,14] has shown substantial deviation from the T 2 −like behavior in the very low temperature region. Other power-law temperature dependences of the resistivity have also been reported [10,14,15,16,17,18,19]. At present, there is no agreement on the actual scattering mechanism below the Curie temperature.Here, we address the low-temperature scattering mechanism in manganites through resistivity measurements of La 0.8−y Sr 0.2 MnO 3 (y = 0 and 0.128) films grown on SrTiO 3 substrates, measured in zero field as well as applied magnetic fields up to 14 T. Our data indicate that spin-wave scattering, which gives a T 7/2 dependence in the low-temperature resistivity, is a dominant dissipation mechanism in the ferromagnetic state of these manganites, besides scattering of small polarons by a soft optical phonon mode. Our analysis of the resistivity data in terms of small-polaron and spin-wave scattering mechanisms, and the spin fluctuation model also g...

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“…[18,33,34,35,36], while other authors [20,21,37,38,39] employed the Mott-VRH model or the ES-VRH model [20,21,25].…”

Section: Experimental Findings For the Manganitesmentioning

confidence: 99%

Quantifying the electrical transport characteristics of electron-doped La0.7Ce0.3MnO3 thin films through hopping energies, Mn valence, and carrier localization length

Thiessen

Beyreuther

Werner³

et al. 2015

Journal of Physics and Chemistry of Solids

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Abstract. Presently, cerium-doped LaMnO 3 is vividly discussed as an electron-doped counterpart prototype to the wellestablished hole-doped mixed-valence manganites. Here, La 0.7 Ce 0.3 MnO 3 thin films of different thicknesses, degrees of CeO 2 phase segregation, and oxygen deficiency, grown on SrTiO 3 single crystal substrates, are compared with respect to their resistancevs.-temperature (R vs. T) behavior from 300 K down to 90 K. While the variation of the film thickness (and thus the degree of epitaxial strain) in the range between 10 nm and 100 nm has only a weak impact on the electrical transport, the degree of oxygen deficiency as well as the existence of CeO 2 clusters can completely change the type of hopping mechanism. This is shown by fitting the respective R-T curves with three different transport models (adiabatic polaron hopping, Mott variable-range hopping, Efros-Shklovskii variable-range hopping), which are commonly used for the mixed-valence manganites. Several characteristic transport parameters, such as the hopping energies, the carrier localization lengths, as well as the Mn valences are derived from the fitting procedures.

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Intrinsic electrical transport and magnetic properties ofLa0.67Ca0.33

Cited by 673 publications

References 56 publications

Metallic and semi-conducting resistivity behaviour of La0.7Ca0.3−x K x MnO3 (x = 0.05, 0.1) manganites

Metallic and semi-conducting resistivity behaviour of La0.7Ca0.3−x K x MnO3 (x = 0.05, 0.1) manganites

Spin-wave scattering at low temperatures in manganite films

Quantifying the electrical transport characteristics of electron-doped La0.7Ce0.3MnO3 thin films through hopping energies, Mn valence, and carrier localization length

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