Intrinsic Gain in Self-Aligned Polysilicon Source-Gated Transistors

Sporea, Radu A.; Trainor, M. J.; Young, N. D.; Shannon, John M.; Silva, S. Ravi P.

doi:10.1109/ted.2010.2056151

Cited by 65 publications

(113 citation statements)

References 10 publications

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“…In the high-field mode of operation, however, the current is sensitive to drain field [2,8,15], therefore some form of field relief at the drain end of the source is required. This is easily done in silicon technology [3] but in other systems, such as solutionprocessed organics, introducing field relief is more problematic. In low-field operation, the current is less sensitive to drain field and a high output impedance can be preserved (Figures 3, 7) enabling organic source-gated transistors to be used for a variety of low-power application.…”

Section: Potential Applicationsmentioning

confidence: 99%

“…In general, the SGT has a higher output impedance and a lower saturation voltage than a geometrically identical thin-film FET (TFT) [1][2][3]. It therefore should perform well in analog circuits where high amplification and low power consumption is a prerequisite.…”

Section: Introductionmentioning

confidence: 99%

“…SGTs have been made in polysilicon [3], amorphous silicon [5] and zinc oxide [6]. SGT behavior has also been shown in studies of contact effects on organic semiconductors [7,8], and in-depth SGT studies have been recently conducted in conjugated polymer devices [9].…”

Section: Introductionmentioning

confidence: 99%

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Low-Field Behavior of Source-Gated Transistors

Shannon

Sporea

Georgakopoulos

et al. 2013

IEEE Trans. Electron Devices

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-A physical description for low-field behavior of a Schottky source-gated transistor (SGT) is outlined where carriers crossing the source barrier by thermionic emission are restricted by JFET action in the pinch-off region at the drain end of the source. This mode of operation leads to transistor characteristics with low saturation voltage and high output impedance without the need for field relief at the edge of the Schottky source barrier and explains many characteristics of the SGT observed experimentally. Two-dimensional device simulations with and without barrier lowering due to the Schottky effect show that transistors can be designed so that the current is independent of source length and thickness variations in the semiconductor. This feature, together with the fact that the current in an SGT is independent of source-drain separation, hypothesizes the fabrication of uniform current sources and other large-area analog circuit blocks with repeatable performance even in imprecise technologies such as high-speed printing.

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Section: Potential Applicationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Low-Field Behavior of Source-Gated Transistors

Shannon

Sporea

Georgakopoulos

et al. 2013

IEEE Trans. Electron Devices

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“…Regardless of the current injection mechanism at the source 3,5,6 , the intentional use of a source barrier in an otherwise conventional TFT structure leads to major differences in the transistor (output) characteristic: low-voltage saturation 2,3,[7][8][9][10] , flat saturated output characteristics 3,7,9,11 , tolerance to geometrical variations 4,12 , bias stress stability 13 and improved current levels in low mobility materials 14 . Both digital 15 and analog applications 14,[16][17][18][19] could benefit from using these devices, in terms of amplification, energy efficiency, uniformity of electrical performance, and reliability.…”

Section: A Schottky Barrier Source-gated Transistors (Sb-sgts)mentioning

confidence: 99%

Temperature dependence of the current in Schottky-barrier source-gated transistors

Sporea

Overy

Shannon

et al. 2015

Journal of Applied Physics

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The temperature dependence of the drain current is an important parameter in thin-film transistors. In this paper, we propose that in source-gated transistors (SGTs), this temperature dependence can be controlled and tuned by varying the length of the source electrode. SGTs comprise a reverse biased potential barrier at the source which controls the current. As a result, a large activation energy for the drain current may be present which, although useful in specific temperature sensing applications, is in general deleterious in many circuit functions. With support from numerical simulations with Silvaco Atlas, we describe how increasing the length of the source electrode can be used to reduce the activation energy of SGT drain current, while maintaining the defining characteristics of SGTs: low saturation voltage, high output impedance in saturation and tolerance to geometry variations. In this study we apply the dual current injection modes to obtain drain currents with high and low activation energies and propose mechanisms for their exploitation in future large-area integrated circuit designs.

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“…When the parasitic FET is in saturation, the characteristic becomes extremely flat, which is advantageous for highimpedance active loads, current sources and analog amplifiers. Furthermore, in high mobility semiconductor technologies, the source barrier greatly reduces the kink effect [4] by extracting minority carriers and preventing bipolar amplification [7].…”

Section: Output Impedance In Saturationmentioning

confidence: 99%

Source-Gated Transistors for Versatile Large Area Electronic Circuit Design and Fabrication

et al. 2011

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Source-gated transistors (SGTs) comprise a blocking contact or potential barrier at the source, which control the current. The paper describes how SGTs can be optimized for particular applications and for specific semiconductor material systems. It is shown how the saturation voltage can be designed to be an order of magnitude smaller than in equivalent FETs to give power savings of over 50% for the same current output. The SGT also achieves a better saturation regime, with lower output conductance over a larger range of drain voltages. Flat-panel lighting, remote sensing and signal processing and large-area circuits made using inexpensive but imprecise patterning techniques are some of the applications which could benefit from incorporating these devices.

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Intrinsic Gain in Self-Aligned Polysilicon Source-Gated Transistors

Cited by 65 publications

References 10 publications

Low-Field Behavior of Source-Gated Transistors

Low-Field Behavior of Source-Gated Transistors

Temperature dependence of the current in Schottky-barrier source-gated transistors

Source-Gated Transistors for Versatile Large Area Electronic Circuit Design and Fabrication

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