Intrinsic magnetic properties of L1 FeNi obtained from meteorite NWA 6259

Poirier, Éric; Pinkerton, F. E.; Kubic, Robert; Mishra, Raja K.; Bordeaux, N.; Mubarok, Arif; Lewis, L. H.; Goldstein, Joseph I.; Skomski, Ralph; Barmak, K.

doi:10.1063/1.4916190

Cited by 67 publications

(25 citation statements)

References 14 publications

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“…[24]. Our values are not, however, as large as reported by others [8,10]: K U = 0.8 − 0.9 MJ/m 3 , but are similar to films deposited on CuNi (0.5 MJ m −3 ) [9]. The effect of the observed chemical disorder in the form of composition modulations is not clear.…”

Section: Magnetic Propertiessupporting

confidence: 49%

Strain engineering for controlled growth of thin-film FeNi L1₀

Frisk

Hase

Svedlindh

et al. 2017

J. Phys. D: Appl. Phys.

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Abstract. FeNi thin films in the L1 0 phase were successfully grown by magnetron sputtering on HF-etched Si(001) substrates on Cu/Cu 100−x Nix buffers. The strain of the FeNi layer, (c/a) FeNi , was varied in a controlled manner by changing the Ni content of the Cu 100−x Nix buffer layer from x = 0 at.% to x = 90 at.%, which influenced the common in-plane lattice parameter of the CuNi and FeNi layers. The presence of the L1 0 phase was confirmed by resonant x-ray diffraction measurements at various positions in reciprocal space. The uniaxial magnetocrystalline anisotropy energy K U is observed to be smaller (around 0.35 MJ m −3 ) than predicted for a perfect FeNi L1 0 sample, but it is larger than for previously studied films. No notable variation in K U with strain state (c/a) FeNi is observed in the range achieved (0.99 (c/a) FeNi 1.02), which is in agreement with theoretical predictions.

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Section: Magnetic Propertiessupporting

confidence: 49%

Strain engineering for controlled growth of thin-film FeNi L1₀

Frisk

Hase

Svedlindh

et al. 2017

J. Phys. D: Appl. Phys.

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“…The FeNi L1 0 structure is a stable phase [9,10] but it is rare in nature, only occurring in meteorites, and it is difficult to synthesize due to the low temperature phase boundary. It has been studied in meteoritic samples [10,11,12] and has been synthesized through neutron bombardment (Néel [13] and Pauleve [14]), electron irradiation (Chamberod [15] and Reuter [16]), in thin film form (Kojima and Mizuguchi [8]), through severe plastic deformation (Lee [17]) and recently through a chemical process (Makino [18]). In all of these methods only very small amounts of the phase are produced.…”

Section: Introductionmentioning

confidence: 99%

Resonant x-ray diffraction revealing chemical disorder in sputtered L1₀FeNi on Si(0 0 1)

Frisk

Lindgren

Pappas

et al. 2016

J. Phys.: Condens. Matter

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Resonant x-ray diffraction revealing chemical disorder in sputtered L10 FeNi on Si(0 0 1). Physics: Condensed Matter, 28(40) Abstract. In the search for new rare earth free permanent magnetic materials, FeNi with the L1 0 structure is a possible candidate. We have synthesized the phase in thin film form by sputtering onto HF-etched Si(001) substrates. Monatomic layers of Fe and Ni were alternately deposited on a Cu buffer layer, all of which grew epitaxially on the Si substrates. A good crystal structure and epitaxial relationship was confirmed by in-house X-ray diffraction (XRD). The chemical order, which to some part is the origin of an uniaxial magnetic anisotropy, was measured by resonant XRD. The 001 superlattice reflection was split in two symmetrically spaced peaks due to a composition modulation of the Fe and Ni layers. Furthermore the influence of roughness induced chemical anti-phase domains on the RXRD pattern is exemplified. A smaller than expected magnetic uniaxial anisotropy energy was obtained, which is partly due to the composition modulations, but the major reason is concluded to be the Cu buffer surface roughness. Journal of

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“…The ferromagnetic equiatomic FeNi alloy with a face-centered tetragonal (fct) L1 0 -type structure, also known as tetrataenite , is a promising candidate for the replacement of high-anisotropy magnetic materials containing rare-earths and critical elements 1 – 5 due to its excellent intrinsic magnetic properties, such as large saturation magnetization (~1.6 T), high uniaxial magneto-crystalline anisotropy (MCA~1 MJ/m 3 ), fairly high Curie temperature (up to 550 °C) and low magnetization damping constant 6 – 8 . The fabrication of the L1 0 -FeNi phase is extremely challenging due to the low atomic mobility below the chemical order/disorder transition temperature (~320 °C) 9 that kinetically limits the formation of the L1 0 phase.…”

Section: Introductionmentioning

confidence: 99%

“…The fabrication of the L1 0 -FeNi phase is extremely challenging due to the low atomic mobility below the chemical order/disorder transition temperature (~320 °C) 9 that kinetically limits the formation of the L1 0 phase. This FeNi phase is naturally found in meteorites, where it forms over millions of years in extreme temperature/pressure conditions 6 . Different strategies have been proposed to artificially obtain the tetrataenite phase, including deposition of alternate Fe and Ni monoatomic layers 10 – 14 , irradiation with neutrons or high energy electrons 15 , 16 , addition of a third element 7 , 16 or by exploiting the epitaxial strain induced by suitable templates in both thin films 13 , 17 – 20 and nanoparticles 21 systems.…”

Section: Introductionmentioning

confidence: 99%

L10-FeNi films on Au-Cu-Ni buffer-layer: a high-throughput combinatorial study

Giannopoulos

Barucca

Kaidatzis

et al. 2018

Sci Rep

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The fct L10-FeNi alloy is a promising candidate for the development of high performance critical-elements-free magnetic materials. Among the different materials, the Au-Cu-Ni alloy has resulted very promising; however, a detailed investigation of the effect of the buffer-layer composition on the formation of the hard FeNi phase is still missing. To accelerate the search of the best Au-Cu-Ni composition, a combinatorial approach based on High-Throughput (HT) experimental methods has been exploited in this paper. HT magnetic characterization methods revealed the presence of a hard magnetic phase with an out-of-plane easy-axis, whose coercivity increases from 0.49 kOe up to 1.30 kOe as the Au content of the Cu-Au-Ni buffer-layer decreases. Similarly, the out-of-plane magneto-crystalline anisotropy energy density increases from 0.12 to 0.35 MJ/m3. This anisotropy is attributed to the partial formation of the L10 FeNi phase induced by the buffer-layer. In the range of compositions we investigated, the buffer-layer structure does not change significantly and the modulation of the magnetic properties with the Au content in the combinatorial layer is mainly related to the different nature and extent of interlayer diffusion processes, which have a great impact on the formation and order degree of the L10 FeNi phase.

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Intrinsic magnetic properties of L1 FeNi obtained from meteorite NWA 6259

Abstract: Katayun, "Intrinsic magnetic properties of L10 FeNi obtained from meteorite NWA 6259" (2015). Ralph Skomski Publications. 95.

Cited by 67 publications

References 14 publications

Strain engineering for controlled growth of thin-film FeNi L1₀

Strain engineering for controlled growth of thin-film FeNi L1₀

Resonant x-ray diffraction revealing chemical disorder in sputtered L1₀FeNi on Si(0 0 1)

L10-FeNi films on Au-Cu-Ni buffer-layer: a high-throughput combinatorial study

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Intrinsic magnetic properties of L1 FeNi obtained from meteorite NWA 6259

Abstract: Katayun, "Intrinsic magnetic properties of L10 FeNi obtained from meteorite NWA 6259" (2015). Ralph Skomski Publications. 95.

Cited by 67 publications

References 14 publications

Strain engineering for controlled growth of thin-film FeNi L10

Strain engineering for controlled growth of thin-film FeNi L10

Resonant x-ray diffraction revealing chemical disorder in sputtered L10FeNi on Si(0 0 1)

L10-FeNi films on Au-Cu-Ni buffer-layer: a high-throughput combinatorial study

Contact Info

Product

Resources

About

Strain engineering for controlled growth of thin-film FeNi L1₀

Strain engineering for controlled growth of thin-film FeNi L1₀

Resonant x-ray diffraction revealing chemical disorder in sputtered L1₀FeNi on Si(0 0 1)